• Macromolecular Research
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• 제17권7호
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• pp.491-498
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• 2009

New $\pi$-conjugated multi-branched molecules were synthesized through the Homer-Emmons reaction using alkyl-substituted, 3,4-ethylenedioxythiophene-based, thiophenyl aldehydes and octaethyl benzene-l,2,4,5-tetrayltetrakis(methylene) tetraphosphonate as the core unit; these molecules have all been fully characterized. The two multi-branched conjugated molecules exhibited excellent solubility in common organic solvents and good self-film forming properties. The semiconducting properties of these multi-branched molecules were also evaluated in organic field-effect transistors (OFET). With octyltrichlorosilane (OTS) treatment of the surface of the $SiO_2$ gate insulator, two of the crystalline conjugated molecules, 7 and 8, exhibited carrier mobilities as high as $2.4({\pm}0.5){\times}10^{-3}$ and $1.3({\pm}0.5){\times}10^{-3}cm^2V^{-1}s^{-1}$, respectively. The mobility enhancement of OFET by light irradiation ($\lambda$ = 436 nm) supported the promising photo-controlled switching behavior for the drain current of the device.

• 한국통신학회논문지
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• 제39C권6호
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• pp.476-481
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• 2014

본 논문에서는 가시광 통신의 광원으로 사용되는 백색 LED (Light Emitting Diode)의 변조 대역폭 확장을 위해 송신단에 전치 등화기 회로를 설계하였다. 또한 청색 광 필터를 이용하여 백색 LED의 주파수 응답을 저해하는 황색 형광물질의 영향을 제거하였고 이로 인해 발생하는 신호 세기의 저하를 광학 설계를 통해 극복하였다. 이 시스템을 통해 백색 LED의 변조 대역폭을 결정하는 3 dB 대역폭을 3 MHz에서 25 MHz이상으로 향상 시켰으며 광학 설계를 통해 추가적인 신호 세기를 확보하여 전송 거리를 증가시켰다. 통신 성능 확인을 위해 LED에 NRZ-OOK (신호를 변조시켜 전송하여, APD (Avalanche Photo Diode)를 통하여 수신하였고 이를 CSA (Communication System Analyzer)와 RFSA (Radio Frequency Spectrum Analyzer)를 통해 분석하였다. 이를 통해 전치 등화기와 광학 설계를 이용하여 전송거리 4.5 m에서 30 Mbps, 1.5 m에서 50 Mbps의 신호 전송이 가능함을 실험적으로 검증하였다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2013년도 제45회 하계 정기학술대회 초록집
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• pp.244.1-244.1
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• 2013

The p-type GaN which act as a hole injection layer in GaN-based LEDs has fundamental problems. The first one arises from the difficulty in growing a highly doped p-GaN (with a carrier concentration exceeding ~1018 $cm^{-3}$). And the second one is the absence of appropriate metals or conducting oxides having a work function that is larger than that of p-type GaN (7.5 eV). Moreover, the LED efficiency is decreases gradually as the injection current increases (the so-called 'efficiency droop' phenomenon). The efficiency droop phenomenon in InGaN quantum wells (QWs) has been a large obstacle that has hindered high-efficiency operation at high current density. In this study, we introduce the new approaches to improve the light-output power of LEDs by using graphene oxide sheets. Graphene oxide has many functional groups such as the oxygen epoxide, the hydroxyl, and the carboxyl groups. Due to nature of such functional groups, graphene oxide possess a lot of hole carriers. If graphene oxide combine with LED top surface, graphene oxide may supply hole carriers to p-type GaN layer which has relatively low free carrier concentration less than electron concentration in n-type GaN layer. To prove the enhancement factor of graphene oxide coated LEDs, we have investigated electrical and optical properties by using ultra-violet photo-excited spectroscopy, confocal scanning electroluminescence microscopy.

• 마이크로전자및패키징학회지
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• 제27권4호
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• pp.113-117
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• 2020

논문에서는 고분자 나노구조 필름의 기계적 물성을 향상하기 위하여 광열효과를 이용한 열처리 공정을 응용하여 나노임프린트로 제작된 고분자 나노구조 필름의 기계적 물성에 미치는 영향을 규명하였다. Hybrid resin과 UV 나노임프린트을 이용하여 저반사 나노구조를 성형하고 IPL (intense pulsed light)를 이용하여 열처리를 수행한 뒤, 제작된 나노구조 필름의 투과율과 내스크래치성을 평가하여 나노구조의 성형성과 기계적 물성의 변화를 관찰하였다. 나노패턴의 특성에 의해서 나노구조의 투과율은 550 nm 파장에서 97.6%로 고투과율의 기능을 확인하였으며, IPL을 이용한 열처리를 진행한 경우 Hotplate를 이용한 열처리보다 경도는 0.51 GPa로, 0.27 GPa로 열처리한 시편에 비해 1.8배 향상하였으며, 동일 실험 조건에서 탄성율은 Hotplate 이용 시 4 GPa에서 IPL 이용 시 5.9 GPa로 1.4배 증가하였다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2009년도 하계학술대회 논문집
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• pp.441-441
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• 2009

Dye-sensitized solar cells (DSSCs) have been widely investigated as a next-generation solar cell because of their simple fabrication process and low coats. The cells use a porous nanocrystalline TiO2 matrix coated with a sensitizer dye that acts as the light-harvesting element. The photo-exited dye injects electrons into the $TiO_2$ particles, and the oxide dye reacts with I- in the electrolyte in regenerative cycle that is completed by the reduction of $I_3^-$ at a platinum-coated counter electrode. Since $TiO_2$ porous film plays a key role in the enhancement of photoelectric conversion efficiency of DSSC, many scientists focus their researches on it. Especially, a high light-to-electricity conversion efficiency results from particle size and crystallographic phase, film porosity, surface structure, charge and surface area to volume ratio of porous $TiO_2$ electrodes, on which the dye can be sufficiently adsorbed. Effective treatment of the photoanode is important to improve DSSC performance. In this paper, to obtain properties of surface and dispersion as nitric acid treated $TiO_2$ photoelectrode was investigate. The photovoltaic characteristics of DSSCs based the electrode fabricated by nitric acid pre-treatment $TiO_2$ materials gave better performances on both of short circuit current density and open circuit voltage. We compare dispersion of $TiO_2$ nanoparticles before and after nitric acid treatment and measured Ti oxidized state from XPS. Low charge transfer resistance was obtained in nitric acid treated sample than that of untreated sample. The dye-sensitized solar cell based on the nitric acid treatment had open-circuit voltage of 0.71 V, a short-circuit current of 15.2 mAcm-2 and an energy conversion efficiency of 6.6 % under light intensity of $100\;mWcm^{-2}$. About 14 % increases in efficiency obtained when the $TiO_2$ electrode was treated by nitric acid.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2009년도 하계학술대회 논문집
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• pp.151-151
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• 2009

Recently, there has been increasing interest in amorphous oxide semiconductors to find alternative materials for an amorphous silicon or organic semiconductor layer as a channel in thin film transistors(TFTs) for transparent electronic devices owing to their high mobility and low photo-sensitivity. The fabriction of amorphous oxide-based TFTs at room temperature on plastic substrates is a key technology to realize transparent flexible electronics. Amorphous oxides allows for controllable conductivity, which permits it to be used both as a transparent semiconductor or conductor, and so to be used both as active and source/drain layers in TFTs. One of the materials that is being responsible for this revolution in the electronics is indium-zinc-tin oxide(IZTO). Since this is relatively new material, it is important to study the properties of room-temperature deposited IZTO thin films and exploration in a possible integration of the material in flexible TFT devices. In this research, we deposited IZTO thin films on polyethylene naphthalate substrate at room temperature by using magnetron sputtering system and investigated their properties. Furthermore, we revealed the fabrication and characteristics of top-gate-type transparent TFTs with IZTO layers, seen in Fig. 1. The experimental results show that by varying the oxygen flow rate during deposition, it can be prepared the IZTO thin films of two-types; One a conductive film that exhibits a resistivity of $2\times10^{-4}$ ohm${\cdot}$cm; the other, semiconductor film with a resistivity of 9 ohm${\cdot}$cm. The TFT devices with IZTO layers are optically transparent in visible region and operate in enhancement mode. The threshold voltage, field effect mobility, on-off current ratio, and sub-threshold slope of the TFT are -0.5 V, $7.2\;cm^2/Vs$, $\sim10^7$ and 0.2 V/decade, respectively. These results will contribute to applications of select TFT to transparent flexible electronics.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2013년도 제44회 동계 정기학술대회 초록집
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• pp.334-334
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• 2013

In the past decade, the infrared detectors based on intersubband transition in quantum dots (QDs) have attracted much attention due to lower dark currents and increased lifetimes, which are in turn due a three-dimensional confinement and a reduction of scattering, respectively. In parallel, focal plane array development for infrared imaging has proceeded from the first to third generations (linear arrays, 2D arrays for staring systems, and large format with enhanced capabilities, respectively). For a step further towards the next generation of FPAs, it is envisioned that a two-dimensional metal hole array (2D-MHA) structures will improve the FPA structure by enhancing the coupling to photodetectors via local field engineering, and will enable wavelength filtering. In regard to the improved performance at certain wavelengths, it is worth pointing out the structural difference between previous 2D-MHA integrated front-illuminated single pixel devices and back-illuminated devices. Apart from the pixel linear dimension, it is a distinct difference that there is a metal cladding (composed of a number of metals for ohmic contact and the read-out integrated circuit hybridization) in the FPA between the heavily doped gallium arsenide used as the contact layer and the ROIC; on the contrary, the front-illuminated single pixel device consists of two heavily doped contact layers separated by the QD-absorber on a semi-infinite GaAs substrate. This paper is focused on analyzing the impact of a two dimensional metal hole array structure integrated to the back-illuminated quantum dots-in-a-well (DWELL) infrared photodetectors. The metal hole array consisting of subwavelength-circular holes penetrating gold layer (2DAu-CHA) provides the enhanced responsivity of DWELL infrared photodetector at certain wavelengths. The performance of 2D-Au-CHA is investigated by calculating the absorption of active layer in the DWELL structure using a finite integration technique. Simulation results show the enhanced electric fields (thereby increasing the absorption in the active layer) resulting from a surface plasmon, a guided mode, and Fabry-Perot resonances. Simulation method accomplished in this paper provides a generalized approach to optimize the design of any type of couplers integrated to infrared photodetectors.

• 마이크로전자및패키징학회지
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• 제21권3호
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• pp.67-71
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• 2014

본 연구에서는 Si(111) 기판을 이용하여 고품질의 GaN 박막을 성장하기 위하여 다양한 패턴을 갖는 Si 기판을 제작하였다. Si(111) 기판위에 이온 스퍼터(ion-sputter)를 이용하여 Pt 박막을 증착한 후 열처리(thermal annealing)하여 Pt 금속 마스크를 형성하고 유도 결합 플라즈마 이온 식각(inductively coupled plasma-reactive ion etching, ICP-RIE) 공정을 통하여 기둥(pillar)형태의 나노 패턴된 Si(111) 기판을 제작하였고 리소그래피 공정을 통하여 마이크로 패턴된 Si(111) 기판을 제작하였다. 일반적인 Si(111) 기판, 마이크로 패턴된 Si(111) 기판 및 나노 패턴된 Si(111) 기판위에 유기화학기상증착(metal organic chemical vapor deposition, MOCVD) 방법으로 GaN 박막을 성장하여 표면 특성과 결정성 및 광학적 특성을 분석하였다. 나노 패턴된 Si(111) 기판위에 성장한 GaN 박막은 일반적인Si(111) 기판과 마이크로 패턴된 Si(111) 기판위에 성장한 GaN 박막보다 표면의 균열과 거칠기가 개선되었다. 나노 패턴된 Si(111) 기판위에 성장한 GaN (002)면과 (102)면에 x-선 회절(x-ray diffraction, XRD) 피크의 반폭치(full width at half maximum, FWHM)는 576 arcsec, 828 arcsec으로 다른 두 기판위에 성장한 GaN 박막 보다 가장 낮은 값을 보여 결정성이 향상되었음을 확인하였다. Photoluminescence(PL)의 반폭치는 나노 패턴된 Si(111) 기판위에 성장한 GaN 박막이 46.5 meV으로 다른 기판위에 성장한 GaN 박막과 비교하여 광학적 특성이 향상되었음을 확인하였다.

• 한국산림과학회지
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• 제86권1호
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• pp.87-97
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• 1997

유휴농경지의 증가로 이에 대한 대안적 활용의 필요성이 대두되고 있다. 본 연구는 경관의 모의조작을 통하여 이를 보다 적극적으로 산림으로 복구하거나 다른 대안으로의 이용하는 방안의 타당성을 검토하며 이에 대한 지불의사를 분석하고자 하였다. 두가지 유형의 유휴농경지에 대하여 각가 세개씩의 대안을 검토하여 총 6개의 대안을 검토하였다. SBE값은 폐경지상태가 가장 낮았으며 산림과 야생초화류로 복구되는 대안의 값이 유의하게 상승하였다. 각각의 토지이용대안에 대한 지불의사를 추정하기 위하여 로지스틱 모형을 적용하였으며 6개의 모델에 대한 ${\rho}$값은 0.3-0.4로서 예상된 적중률은 약 75%에 해당하였다. 독립변수 중에서 적중률에 가장 크게 영향을 미치는 변수는 세액으로 나타났으며 수입은 통계적으로 유의한 관련을 가지지 않는 것으로 나타났다. 다른 변수들은 모델에 따라 다르게 나타났다. SBE와 WTP는 서로 일정한 상관을 가지는 것으로 사료되며 SBE가 증가함에 따라 WTP도 증가하는 것으로 추정되었다. 따라서, 농경지에 대한 경관의 질을 향상시킴으로써 전원지역의 환경보전에 대한 지불의사를 높일 수 있을 것으로 사료된다.

• JSTS:Journal of Semiconductor Technology and Science
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• 제7권3호
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• pp.196-208
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• 2007

An analytical model is proposed for an optically controlled Metal Semiconductor Field Effect Transistor (MESFET), known as Optical Field Effect Transistor (OPFET) considering the diffusion fabrication process. The electrical parameters such as threshold voltage, drain-source current, gate capacitances and switching response have been determined for the dark and various illuminated conditions. The Photovoltaic effect due to photogenerated carriers under illumination is shown to modulate the channel cross-section, which in turn significantly changes the threshold voltage, drainsource current, the gate capacitances and the device switching speed. The threshold voltage $V_T$ is reduced under optical illumination condition, which leads the device to change the device property from enhancement mode to depletion mode depending on photon impurity flux density. The resulting I-V characteristics show that the drain-source current IDS for different gate-source voltage $V_{gs}$ is significantly increased with optical illumination for photon flux densities of ${\Phi}=10^{15}\;and\;10^{17}/cm^2s$ compared to the dark condition. Further more, the drain-source current as a function of drain-source voltage $V_{DS}$ is evaluated to find the I-V characteristics for various pinch-off voltages $V_P$ for optimization of impurity flux density $Q_{Diff}$ by diffusion process. The resulting I-V characteristics also show that the diffusion process introduces less process-induced damage compared to ion implantation, which suffers from current reduction due to a large number of defects introduced by the ion implantation process. Further the results show significant increase in gate-source capacitance $C_{gs}$ and gate-drain capacitance $C_{gd}$ for optical illuminations, where the photo-induced voltage has a significant role on gate capacitances. The switching time ${\tau}$ of the OPFET device is computed for dark and illumination conditions. The switching time ${\tau}$ is greatly reduced by optical illumination and is also a function of device active layer thickness and corresponding impurity flux density $Q_{Diff}$. Thus it is shown that the diffusion process shows great potential for improvement of optoelectronic devices in quantum efficiency and other performance areas.