• Journal of the Semiconductor & Display Technology
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• v.18 no.1
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• pp.38-41
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• 2019

Proton beam writing is a direct writing lithography technique for semiconductor fabrication process. The advantage of this technique is that the proton beam does not scatter as they travel through the matter and therefore maintain a straight path as they penetrate into the resist. The experiment has been carried out at Accelerator Mass Spectrometry facility. The focused proton beam with the fluence of $100nC/mm^2$ was exposed on the PMMA coated silicon sample to make a pattern on a photo resist. The results show the potential of proton beam writing as an effective way to produce semiconductor fabrication process.

• Journal of the Korean Magnetics Society
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• v.17 no.4
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• pp.178-181
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• 2007

Electron beam lithography has been studied as a next-generation lithography technology instead of photo lithography for ULSI semiconductor devices. In this work, we have made a low-energy electron beam lithography system based on the microcolumn and investigated the dependence of the pattern thickness on the energies and dose concentration of the electron beam. We have also demonstrated the potential of low-energy lithography by achieving 100 nm-$SiO_2$ thin film patterning.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.484-485
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• 2011

반사방지(Anti-Reflection, AR) 특성은 태양전지, LED, 광검출기 등의 광전소자와 디스플레이의 효율과 투과도를 향상시키기 위해 적용되고 있다. 또한 최근에 네비게이션, 스마트폰의 보급 증가로 인해 소형 디스플레이에 지문방지와 동시에 반사방지 기능을 갖는 필름이 사용되고 있다. 현재 적용되고 있는 반사방지 필름은 다층박막 코팅으로 형성된 필름[1]으로 생산단가와 박막의 내구성 및 신뢰성에 문제점을 가지고 있다. 이런 문제점을 해결하기 위해 나노구조로 제작 되는 반사방지 필름에 관한 연구가 활발히 진행되고 있다[2]. 나노구조로 형성된 반사방지 구조는 moth-eye 구조라고 하며, 기본 원리는 원뿔 형태를 형성된 나노 구조를 통해 공기와 나노구조 사이의 유효 굴절률을 서서히 변화시켜 반사를 줄이는 것이다. 그러므로 moth-eye 나노구조는 파장 이하의 pitch와 파장 크기의 높이를 갖도록 구조가 제작되어야 한다[3]. Photo-lithography[4], e-beam lithography[5], interference lithography[6], dip-pen nanolithography[7], hybrid nano-patterning lithography[8] 등 여러 가지 방법으로 나노 구조를 제작하고 있으나, 네비게이션이나 스마트폰 등에 적용될 수 있는 대면적으로 제작하기 위해서는 roll-to-roll printing과 같은 대면적 공정을 이용하여 제작하는 것이 필요하다. 본 논문에서는 원통형 알루미늄 rod에 양극산화를 통해 다공성 AAO(anode aluminium oxide) template를 제작하고, roll-to-roll printing 기술을 사용하여 moth-eye 나노구조를 갖는 반사방지 필름을 제작하는 것에 대해 기술하였다.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.06a
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• pp.424-424
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• 2009

그라핀은 밴드갭이 없어서 세미메탈의 성질을 띠므로 초고속 RF 소자에는 응용이 가능하지만, 현재 사용되는 반도체 칩에 사용하기가 불가능하다. 그러나 그라핀을 매우 좁은 리본 형태로 만들 경우 밴드갭이 생기고 이에 따라 반도체특성을 뛰게 된다. 이러한 특성은 시뮬레이션을 통해서만 이해되다가 2007년 P. Kim이 그라핀 나노리본의 밴드캡이 리본의 폭이 좁아짐에 따라 증가함을 실험적으로 최초로 발표하였다. 하지만 그라핀을 나노리본형태로 식각 방법에 대해서는 정확히 연구되지 않았다. 따라서 본 연구에서는 $O_2$ plasma ashing 방법을 이용하여 그라핀을 식각하는 방법에 대해 연구하였다. 먼저 Si기판을 initial cleaning 한 후, highly-oriented pyrolytic graphite(HOPG)를 이용하여 기존의 mechanical exfoliation 방식을 통해 그라핀을 형성하였다. Photo-lithography 방법을 통하여 패터닝한 후, 그라핀을 식각하기 위하여 Reactive Ion Etcher (RIE) system을 이용한 $O_2$ plasma ashing을 50 W에서 1 분간 실시하였다. 다시 image reverse photo-lithography 과정과 E-beam evaporator system를 통해서 Al 전극을 형성하여 graphene-FET를 제작하였고, 광학 현미경과 AFM (Atomic force microscope)을 통해 두께를 확인하였다. 본 연구를 통하여 $O_2$ plasma ashing을 이용하여 쉽게 그라 E을 식각할 수 있음을 확인 하였으며, 제작된 소자의 전기적 특성에 대해서 현재 실험중에 있다.

• Journal of the Korean Society for Precision Engineering
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• v.29 no.10
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• pp.1144-1148
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• 2012

Process conditions for generating nano patterns handle different process according to the pattern characteristics, and different process data according to patterns in questions. To efficiently find optimal process conditions for generating nano patterns, process data by experiment is needed consideration of the pattern characteristics concerning the equipment. In particular, coating methods of a cylindrical mold differ from it of a flat plate because of viscosity of coating materials. Also the coating thickness affects nano process and pattern line width. So coating method of coating thickness for cylindrical mold is very important on nano pattern generating. In this study, a method is proposed for coating Photo Resist through the spray in order to coat cylindrical mold and measuring the thickness of coating using measuring tip considering the size of cylindrical mold because there is no method in the existing SEM. The proposed method is applied to a real printed electronics system to verify its accuracy and efficiency.

• Polymer(Korea)
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• v.31 no.5
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• pp.442-446
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• 2007

Alkali soluble and photo-curable polyesters were prepared from fluorene epoxy acrylate and various aromatic dianhydrides. To make a black matrix for LCD color-filter application, photo-resist solution was made by mixing synthesized polyester as binder, carbon black as pigment, initiator and multifunctional monomer in solvent. Black matrix pattern was formed on the glass substrate by lithography process. In this study, we synthesized various polyester-based binder polymers for LCD color-filter applications, and compared the analytical properties of those polymers and lithography patterns.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.02a
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• pp.84-84
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• 2010

In this study, we report on the novel lithographic patterning method to fabricate organic-semiconductor devices based on photo and e-beam lithography with well-known silicon technology. The method is applied to fabricate pentacene-based organic field effect transistors. Owing to their solubility, sub-micron sized patterning of P3HT and PEDOT has been well established via micromolding in capillaries (MIMIC) and inkjet printing techniques. Since the thermally deposited pentacene cannot be dissolved in solvents, other approach was done to fabricate pentacene FETs with a very short channel length (~30nm), or in-plane orientation of pentacene molecules by using nanometer-scale periodic groove patterns as an alignment layer for high-performance pentacene devices. Here, we introduce the atomic layer deposition of $Al_2O_3$ film on pentacene as a passivation layer. $Al_2O_3$ passivation layer on OTFTs has some advantages in preventing the penetration of water and oxygen and obtaining the long-term stability of electrical properties. AZ5214 and ma N-2402 were used as a photo and e-beam resist, respectively. A few micrometer sized lithography patterns were transferred by wet and dry etching processes. Finally, we fabricated sub-micron sized pentacene FETs and measured their electrical characteristics.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.34 no.1
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• pp.21-26
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• 2021

Single-layer graphene is grown directly on Ti-buffered SiO2 at 100℃. As a result of the AFM measurement of the Ti buffer layer, the roughness of approximately 0.2 nm has been improved. Moreover, the Raman measurement of graphene grown on it shows that the D/G intensity ratio is extremely small, approximately 0.01, and there are no defects. In addition, the 2D/G intensity ratio had a value of approximately 2.1 for single-layer graphene. The sheet resistance is also 89 Ω/□, demonstrating excellent characteristics. The problem was solved by using graphene and a lift-off patterning method. Low-temperature direct-grown graphene does not deteriorate after the patterning process and can be used for device and micro-patterning research.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2002.05a
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• pp.503-507
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• 2002

Mask manufacturing is a high COC and COO process in developing of semiconductor devices, because of the mass production tool with high resolution. Direct writing has been thought to be one of the patterning method to cope with development or small-lot production of the device. This study focused on the development of the direct, mastless patterning process using stereolithography tool for the easy and convenient application to micro and miso scale products. Experiments are utilized by three dimensional CAD/CAM as a mask and photo-curable resin as a photo-resist in a conventional stereo-lithography apparatus. Results show that the resolution of the pattern was achieved about 300 micron because of complexity of SLA apparatus settings, inspite of 100 micro of inherent resolution. This paper concludes that photo resist and laser spot diameter should be adjusted to get finer patterns and the proposed method is significantly feasible to mastless and low cost patterning with micro and miso scale.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1994.05a
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• pp.113-115
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• 1994

We considered the ion and photo-induced properties as a function of wavelength by exposing the light over the band gap of a-Ag/a-$Se_{75}$$Ge_{25}$ and the low-energy defocused $Ga^{+}$ ion beam on Ag/a-$Se_{75}$$Ge_{25}$ thin film. This film acts as a negative resist for photo or ion beam lithography. We observed that the absorbance coefficient decreased with increasing the photo-exposing time and exposing the ion beam. The bandgap shifts toward longer wavelength called a "darkening effect" are observed in the films exposed to both photons and ions. We suggest that a primary step in the Ag layer and a secondary step is in a-$Se_{75}$$Ge_{25}$ film layer.