• 한국정보디스플레이학회:학술대회논문집
• /
• 한국정보디스플레이학회 2009년도 9th International Meeting on Information Display
• /
• pp.204-206
• /
• 2009

Luminescent films were prepared by infiltration of tris(dibenzoylmethane) mono(1, 10-phenanthroline) europium incorporated ormosil into colloidal $SiO_2$ photonic crystal templates. The PL intensity of the infiltrated film into the template was about 13 times higher than that of the plane film prepared without the template.

• 한국방사선학회논문지
• /
• 제4권4호
• /
• pp.25-28
• /
• 2010

본 연구에서는 고해상도 영상획득을 위해 저온액상법을 이용하여 Europium doped gadollium oxide($Gd_2O_3$:Eu) 미세 형광체를 제조하여 입자의 형상 및 구조를 분석하였으며, 발광체 필름에 대한 방사선에 대한 광학적 반응특성 실험을 통해 고해상도 영상검출기 적용 가능성을 확인하였다. 제조된 형광체 필름 두께에 따른 광량 및 선량에 따른 발광의 선형성을 조사하였다. 측정결과, $270{\mu}m$ 두께의 $Gd_2O_3$:Eu에서 $2945pC/cm^2/mR$의 발광 강도로 이 값은 벌크 형광체 필름의 발광 강도보다 약 1.2배 높은 영상 획득을 위한 충분한 신호임을 확인할 수 있었다. 또한, 임상 진단 영역의 X선 조사선량 범위에서 대체로 좋은 선형적 특성을 보였다.

• 한국결정성장학회지
• /
• 제31권5호
• /
• pp.212-217
• /
• 2021

Silica sol에 YAG 형광체를 첨가량별로 spin 코팅 후, 코팅막의 blue LED에서 백색광이 발현되는 정도와 표면 및 곡면 코팅용 binder로써, 적용가능성을 확인하였다. SEM, PSA를 통해YAG의 입자 크기는 D₅₀: 9~10 ㎛ 내외이며, XRD를 통해 YAG의 결정구조가 garnet(Y₃Al₅O₁₂), cubic인 것을 확인하였다. 코팅막은 crack이 없고 동시에 silica sol이YAG 형광체를 균질하게 도포된 형상을 보였으며, 첨가량 증가와 비례하게 코팅막 내에서 YAG 첨가량과 두께는 최대 40 ㎛까지 증가하는 추세를 보였다. 그리고 YAG 첨가량이 증가할수록 PL emission intensity 증가와 chromatic locus 곡선 끝 방향으로 색좌표 이동을 확인하였다. Soda-lime 유리기판 표면에 코팅 후, crack이 없으며 YAG 형광체가 균질하게 도포된 코팅성과 코팅막의 백색광 발현특성을 확인할 수 있었고 이는 직접적으로 LED에 다양한 형태의 형광 형상의 구현이 가능하다는 것을 의미한다.

• 센서학회지
• /
• 제11권6호
• /
• pp.371-377
• /
• 2002

$Y_2O_3:Eu^{3+}$ and Li-doped $Y_2O_3:Eu^{3+}$ thin films have been grown on sapphire substrates using a pulsed laser deposition technique. The thin film phosphors were deposited at a substrate temperature of $600^{\circ}C$ under the oxygen pressure of 100, 200 and 300 mTorr. The films grown under different deposition conditions have been characterized using microstructural and luminescent measurements. The crystallinity and photoluminescence (PL) of the films are highly dependent on the oxygen pressure. The PL brightness data obtained from $Y_2O_3:Eu^{3+}$ films grown under optimized conditions have indicated that sapphire is one of the most promising substrate for the growth of high quality $Y_2O_3:Eu^{3+}$ thin film red phosphor. In particular, the incorporation of $Li^{+}$ ions into $Y_2O_3$ lattice could induce a remarkable increase of PL. The highest emission intensity was observed with LiF-doped $Y_{1.84}Li_{0.08}Eu_{0.08}O_3(Y_2O_3LiEu)$, whose brightness was increased by a factor of 2.7 in comparison with that of $Y_2O_3:Eu^{3+}$ films. This phosphor may promise for application to the flat panel displays.

• 한국정보디스플레이학회:학술대회논문집
• /
• 한국정보디스플레이학회 2006년도 6th International Meeting on Information Display
• /
• pp.126-129
• /
• 2006

AC-plasma display panels were examined before and after the aging process to analyze the effect of the aging process. The gas analysis was done to detect the impurity gases out of the MgO film and phosphor by a residual gas analyzer. There were no differences found in the components. The MgO film was analyzed to find out the effect of an ion bombardment due to discharge. The surface roughness of the MgO film was different from regional groups due to the different degree of ion bombardments. XPS analysis showed that the 8 hour aging process was not sufficient to remove $Mg(OH)_2$ and $MgCO_3$ existed on the MgO surface. Photoluminescence measurement showed the small deterioration of blue and green phosphor.

• Transactions on Electrical and Electronic Materials
• /
• 제12권1호
• /
• pp.11-15
• /
• 2011

In this study, $ZnGa_2O_4$ phosphors in its application to field emission displays and electroluminescence were synthesized through the precipitation method and $Mn^{2+}$ ions. A green luminescence activator, $Cr^{3+}$ ions, and a red luminescence activator were separately doped into $ZnGa_2O_4$, which was then screen printed to an indium tin oxide substrate. The thick films of the $ZnGa_2O_4$ were deposited with the various thicknesses using nano-sized powder. The best luminescence characteristics were shown at a thickness of 60 ${\mu}m$. Additionally, green-emission $ZnGa_2O_4:Mn^{2+}$ and red-emission $ZnGa_2O_4:Cr^{3+}$ phosphor thick films, which have superior characteristics, were manufactured through the screen-printing method. These results indicate that $ZnGa_2O_4$ phosphors prepared through the precipitation method have wide application as phosphor of the full color emission.

• 한국인쇄학회지
• /
• 제29권1호
• /
• pp.23-33
• /
• 2011

This experimental focus to characterize luminescence properties related to CNT (Carbon Nano Tube) element dispersedly implanted in ZnS-based phosphor thin film panel fabricated by a screen printing method. More specifically FE-SEM measurements, L-V(Luminescence vs. Voltage) and photo luminescence were carried out to determine an optimum value of CNT concentration and film thickness for the thin film structure of CNT-ZnS:(Cu, Al) by the screen printing method. We confirmed that an optimum value of CNT concentration in the ZnS:(Cu, Al) film panel is about 0.75 wt% resulting that the electric conductivity is 1.6 times higher than that of pure CNT sample and showing that the luminescence intensity is increasing until the optimum concentration. Clearly, CNT is presenting in the luminescence process providing a pathway for the creation of hot electron and a channel for the electron-hole recombination but overly inserted CNT may hinder to produce the hot electron for making an avalanching process. In case of the overly doped CNT 1.0 wt% in the ZnS-based phosphor, the luminescence intensity is decreasing although the electric conductivity is exponentially increasing. Based on these results, we realized that hot electron occurred by the external electric field or exciton arose by the external photon source are reduced dramatically over the critical value of CNT concentration because CNT element provide various isolated residues in the composites of ZnS based phosphor rather than pathway or channel for the D-A(Donnor to Acceptor) pair transition or the radiative recombination of electron-hole.

• 대한전기학회:학술대회논문집
• /
• 대한전기학회 1999년도 하계학술대회 논문집 D
• /
• pp.1732-1734
• /
• 1999

In order to study the fabricating condition of phosphor layers of thin film EL devices, some discharge characteristics with several targets in the parallel-plate magnetron sputtering system will be studied. Plasma parameters, such as electron density and temperature, are also studied since they may be considered as one of the very important factors of fabricating condition of thin film EL device.

• 한국정보디스플레이학회:학술대회논문집
• /
• 한국정보디스플레이학회 2006년도 6th International Meeting on Information Display
• /
• pp.27-32
• /
• 2006

The present status and prospects for further development of thin-film electroluminescent (TFEL) devices using oxide phosphors are described. High-luminance oxide TFEL devices have been recently developed using a new combinatorial deposition technique featuring rf magnetron sputtering with a subdivided powder target. In addition, new flexible oxide TFEL devices have been fabricated on an oxide ceramic sheet and operated stably in air above $200^{\circ}C$.

• 한국재료학회지
• /
• 제26권10호
• /
• pp.577-582
• /
• 2016

$Dy^{3+}$ and $Eu^{3+}$-codoped $SrWO_4$ phosphor thin films were deposited on sapphire substrates by radio frequency magnetron sputtering by changing the growth and thermal annealing temperatures. The results show that the structural and optical properties of the phosphor thin films depended on the growth and thermal annealing temperatures. All the phosphor thin films, irrespective of the growth or the thermal annealing temperatures, exhibited tetragonal structures with a dominant (112) diffraction peak. The thin films deposited at a growth temperature of $100^{\circ}C$ and a thermal annealing temperature of $650^{\circ}C$ showed average transmittances of 87.5% and 88.4% in the wavelength range of 500-1100 nm and band gap energy values of 4.00 and 4.20 eV, respectively. The excitation spectra of the phosphor thin films showed a broad charge transfer band that peaked at 234 nm, which is in the range of 200-270 nm. The emission spectra under ultraviolet excitation at 234 nm showed an intense emission peak at 572 nm and several weaker bands at 479, 612, 660, and 758 nm. These results suggest that the $SrWO_4$: $Dy^{3+}$, $Eu^{3+}$ thin films can be used as white light emitting materials suitable for applications in display and solid-state lighting.