• 제목/요약/키워드: perovskite structure

검색결과 486건 처리시간 0.024초

Synthesis and Characterisation of Mixed Conducting Perovskite Type Oxide and Its Electrochemical Application to Electrode Material for Solid Oxide Fuel Cell

  • Kim, Yu-Mi;Pyun, Su-Il;Lee, Gyoung-Ja;Kim, Ju-Sik
    • 전기화학회지
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    • 제10권2호
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    • pp.116-125
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    • 2007
  • This article is concerned with synthesis, characterisation and electrochemical application of the mixed conducting perovskite type oxide to electrode materials for solid oxide fuel cell. First, this review provides a comprehensive survey of the various synthetic methods such as solid state reaction, Pechini, glycine nitrate process and sol-gel methods for the preparation of perovskite type oxide powders. Subsequently, the electrical and microstructural properties of the mixed conducting oxides were discussed in detail. Finally, as electrochemical applications of the mixed conducting perovskite type oxides to electrode materials for solid oxide fuel cell, fundamentals of theoretical ac-impedance model for porous mixed conducting electrodes were introduced. Furthermore, the ac-impedance behaviour of porous and dense mixed conducting electrodes prepared by various synthetic methods was discussed.

수열합성법으로 제막한 MoO3 나노 구조체를 정공수송층으로 갖는 페로브스카이트 태양전지 특성분석 (Characteristics of Perovskite Solar Cell with Nano-Structured MoO3 Hole Transfer Layer Prepared by Hydrothermal Synthesis)

  • 송재관;안준섭;한은미
    • 한국재료학회지
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    • 제30권2호
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    • pp.81-86
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    • 2020
  • MoO3 metal oxide nanostructure was formed by hydrothermal synthesis, and a perovskite solar cell with an MoO3 hole transfer layer was fabricated and evaluated. The characteristics of the MoO3 thin film were analyzed according to the change of hydrothermal synthesis temperature in the range of 100 ℃ to 200 ℃ and mass ratio of AMT : nitric acid of 1 : 3 ~ 15 wt%. The influence on the photoelectric conversion efficiency of the solar cell was evaluated. Nanorod-shaped MoO3 thin films were formed in the temperature range of 150 ℃ to 200 ℃, and the chemical bonding and crystal structure of the thin films were analyzed. As the amount of nitric acid added increased, the thickness of the thin film decreased. As the thickness of the hole transfer layer decreased, the photoelectric conversion efficiency of the perovskite solar cell improved. The maximum photoelectric conversion efficiency of the perovskite solar cell having an MoO3 thin film was 4.69 % when the conditions of hydrothermal synthesis were 150 ℃ and mass ratio of AMT : nitric acid of 1 : 12 wt%.

A Brief Review on Recent Developments in MAPbI3 Perovskite-Based Transistors

  • Padi, Siva Parvathi;Kim, Taeyong;Rabelo, Matheus;Yi, Junsin
    • 한국전기전자재료학회논문지
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    • 제34권5호
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    • pp.348-356
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    • 2021
  • Field-effect transistors (FETs) are the key elements of conventional electronics; hence, have drawn a lot of research and commercial interests. In recent years, metal halide perovskite materials have achieved a remarkable efficiency of 29.15% in the field of photovoltaics, and have drawn the scientific community's attention to promote their use in the field of optoelectronics, such as FETs and phototransistors. The MAPbI3 (methylammonium lead iodide) perovskite TFT has achieved a record hole mobility of 21.41 cm2/V-s in the year 2020. In this review, we will briefly discuss the physical structure of MAPbI3 perovskite and the essential factors that stimulate these devices, together with the role of defects, the ion migration concept, and the implication of both dielectric and electrode materials on the device's performance.

대면적 페로브스카이트 태양전지 제작을 위한 슬롯-다이코팅 방법 (Slot-die Coating Method for Manufacturing Large-area Perovskite Solar Cell)

  • 오주영;하재준;이동근
    • 한국콘텐츠학회논문지
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    • 제21권12호
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    • pp.918-925
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    • 2021
  • 페로브스카이트 태양전지는 기존의 실리콘 태양전지를 대체하는 차세대 태양전지로서, 페로브스카이트 구조를 가진 유-무기 하이브리드 물질을 광 활성층으로 사용하는 태양전지 소자로 고효율, 저가의 용액 공정 및 저온 공정에 유리한 장점들을 가지고 있으며 지난 10년간 빠른 효율 향상을 보여주었다. 이러한 페로브스카이트 태양전지의 상용화 과정에서 대면적 코팅 방법에 대해서 연구개발이 진행되어야 한다. 대면적 페로브스카이트 태양전지 대면적 코팅 방법 중 하나로 슬롯-다이 코팅방법에 대해서 연구 진행하였다. 메니스커스를 이용하여 기판 위를 지나가며 용액을 코팅하는 방법으로 3D printer에 메니스커스를 장착하여 코팅을 할 수 있도록 하였다. 코팅 시 작용하는 변수로는 bed 온도, coating speed, N2 blowing간격, N2 blowing 높이, N2 blowing세기등이 있으며 이를 조절하여 페로브스카이트 흡수층을 제작 진행하였으며, 대면적 소자 제작을 위한 코팅 조건을 최적화 하였다.

BZCT 세라믹의 마이크로파 특성에 관한 연구 (Microwave Dielectric Properties of BZCT Ceramics)

  • 이문기;최의선;류기원;이영희
    • 한국전기전자재료학회논문지
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    • 제15권10호
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    • pp.870-875
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    • 2002
  • Ba(Zn$_1$-xCox)TaO$_3$[BZCT] ceramics were Prepared by the conventional mixed oxide method. The ceramics were sintered at the temperature of 1450∼1550$\^{C}$ for 5 hr in air. The crystal structure of BZCT ceramics was investigated by the XRD. The microstructure of the specimens were observed by SEM. The structural properties of BZCT specimens were investigated as a function of composition and sintering temperature. All BZCT ceramics sintered over 1550$\^{C}$ were showed a polycrystalline complek perovskite structure without second phases and any unreacted materials. The density of BZCT (70/30) specimen sintered at 1550$\^{C}$ was 6.31g/㎤. In the case of the BZCT(70/30) ceramics sintered at 1550$\^{C}$ for 5 hours, dielectric constant, qualify factor and temperature coefficient of resonant frequency for microwave dielectrics application were a good value of 29, 16,468 at 10㎓ and -4.4 ppm/$\^{C}$, respectively.

솔-젤법에 의해 제조된 $PbTiO_3$ 박막의 결정구조 및 성분분포에 미치는 열처리의 영향 (Effect of heat treatment on the crystal structure and element distribution of $PbTiO_3$ thin film prepared by sol-gel process)

  • Ki Cherl Ho;Do Hyun Kim
    • 한국결정성장학회지
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    • 제4권4호
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    • pp.347-355
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    • 1994
  • 솔-젤공정에 의하여 실리콘 웨이퍼 위에 형성한 $PbTiO_3$ 박막의 결정 구조 및 성분 분포에 미치는 열처리 효과를 고찰하기 위하여 $400^{\circ}C에서 750^{\circ}C$ 까지의 온도 범위에서 열처리를 수행하여 $440^{\circ}C$에서 열처리한 박막에서도 peroxskite 구조만을 갖는 박막이 형성됨을 새로이 발견하였다. $480^{\circ}C$에서 $550^{\circ}C$까지 열처리한 박막은 소량의 pyrochlore 구조가 함께 형성되 었으며 $600^{\circ}C$ 이상에서 열처리한 박막은 단지perovskite 구조만을 가졌으나 납의 승화가 급격 하게 증가하는 것이 관찰되었다.

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Multiferroic Bi2/3La1/3FeO3 나노입자의 Mössbauer 연구 (Mössbauer Studied of Multiferroic Bi2/3La1/3FeO3 Nanoparticles)

  • 이승화
    • 한국자기학회지
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    • 제16권1호
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    • pp.28-33
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    • 2006
  • [ $Bi_{2/3}La_{1/3}FeO_3$ ]분말을 졸-겔법을 이용하여 제조하였다. 결정학적 및 자기적 성질을 열분석장치(TG-DTA), x-선 회절분석기(XRD), 주사전자현미경(SEM) 및 Mossbauer분광기를 이용하여 연구하였다. $Bi_{2/3}La_{1/3}FeO_3$ 단일상은 $600^{\circ}C$에서 3시간 동안 공기 중에서 열처리하여 얻을 수 있었으며, x-선 회절분석 결과 $Bi_{2/3}La_{1/3}FeO_3$ 분말은 rhombohedral 형태로 변형된 단순 perovskite 구조를 가졌으며 이때 격자상수 $=3.985\pm0.0005{\AA},\;\alpha=89.5^{circ}$이었다. Mossbauer스펙트럼 분석결과 $Bi_{2/3}La_{1/3}FeO_3$의 Neel온도는 $680\pm3K$임을 알 수 있었다. $Bi_{2/3}La_{1/3}FeO_3$의 이성질체이동 값은 0.27mm/s 값을 가졌으며, 이는 $Bi_{2/3}La_{1/3}FeO_3$.의 Fe 이온이 가지는 이온가는 $Fe^{3+}$의 high spin상태임을 보여주었다. $Bi_{2/3}La_{1/3}FeO_3$의 결정내의 Debye 온도는 $305\pm5K$ 평균 초미세 자기장 $H_{hf}(T)$$T/T_N<0.7$영역에서 $[H_{hf}(T)-H_{hf}(0)]/H_{hf}(0)=-0.42(T/T_N)^{3/2}-0.13(T/T_N)^{5/2}$로 spin wave가 결정 내에서 잘 여기 됨을 알 수 있었다.

이온주입이 PZT 박막의 결정화에 미치는 영향 (Effect of Ion Damage on the Crystallization of PZT thin films)

  • 박응철;이장식;박정호;이병일;주승기
    • 한국세라믹학회지
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    • 제37권5호
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    • pp.418-424
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    • 2000
  • Effects of Ar ion damage prior to the phase transformation from pyrochlore to perovskite structure of PZT thin films have been investigated. As the degree of damage increased by increasing the acceleration voltage in the ion mass doping system, the phase transformation temperature decreased such that the temperature could be lowered down to 550$^{\circ}C$ when the film was damaged at 15 kV for 5 minutes. When the film was damaged prior to the heat treatment grain size of the perovskite thin films became less than 300${\AA}$. It turned out that relatively high value of the remanent polarization (about 30${\mu}$C/$\textrm{cm}^2$) as well as improvement of the fatigue characteristics to a large extent is closely related to the fine grain size of thus obtained PZT films.

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Effect of Seeding Layers on Preparation of PLZT Thin Films by Sol-Gel Method

  • Hirano, Tomio;Kawai, Hiroki;Suzuki, Hisao;Kaneko, Shoji;Wada, Tatsuya
    • The Korean Journal of Ceramics
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    • 제5권1호
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    • pp.50-54
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    • 1999
  • $(Pb_xLa_{1-x}) (Zr_yTi_{1-y})O_3$ (PLZT) thin films with electrooptic effect are promising for the optical application such as display or light shutter. However, it is difficult to use inexpensive and transparent glass substrates because the conventional process for preparation of PLZT requires temperatures above $600^{\circ}C$. In order to deposit a perovskite PLZT thin films at low processing temperatures through alkoxide route, we have offered several seeding processes which reduce the activation energy for crystallization. In this study, we optimized the stacking structure of multilayered PLZT for obtaining single phase perovskite at lower temperatures. As a result, ferroelectric PLZT thin films with different compositions were successfully prepared at a temperature as low at $500^{\circ}C$.

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