• 한국소음진동공학회:학술대회논문집
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• 한국소음진동공학회 2009년도 추계학술대회 논문집
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• pp.421-426
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• 2009

This paper presents vibration analysis of maskless exposure module in Printed Circuit Board (PCB) manufacturing system. In order to complete exposure process in PCB, masking type module has been widely used in electronics industries. However, masking process confronts some limitations of application due to higher production cost for masking as well as lower printing resolution. Therefore, maskless exposure module is started to be in the spotlight for flexible production system to meet the needs of fabrication in variable patterns at low cost. Since maskless exposure process adopts direct patterning to PCB, vibration problems become more critical compared to conventional masking type process. Moreover, movements of exposure engine as well as stage generate vibration sources in the system. Thus, it is imperative to analyze the vibration characteristics for the maskless exposure module to improve the quality and accuracy of PCB. In this study, vibration analysis using the Finite Element Analysis is conducted to identify the critical structural parts deteriorating vibration performance. Also, Experimental investigations are conducted by single/dual encoder measurement process under the operating module speed. Measurement points of vibration are selected by three places, which are base of stage, exposure engine and top of stage, to check the effect of vibration from the exposure engine. Comparisons between analysis results and experimental measurement are conducted to confirm the accuracy of analysis results including the developed FE model. Finally, this studies show feasibility of optimal design using the developed FE analysis model.

• 한국광학회:학술대회논문집
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• 한국광학회 2009년도 동계학술발표회 논문집
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• pp.133-134
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• 2009

Cold temperature development (CTD) of electron beam (EB) patterned resists and subsequent dry etching were investigated for fabrication of nano-patterned Niobium (Nb). Bulky Nb fims on GaAs substrates were deposited with EB evaporation. Line patterns on Nb cathode were fabricated by EB patterning and reactive ion etching (RIE). Size deviations of nano-sized line patterns from CAD designed patterns are dependent on the EB total exposure, but it can be improved by CTD of EB-exposed resist. Line patterns of 10 to 300 nm widths of EB-exposed resist patterns were drawn under various exposure conditions of $0.2{\mu}s$/dot (total 240,000 dot) with a constant current (50 pA). Compared with room temperature development (RTD), the CTD improves pattern resolution due to the suppression of backscattering effect. RIE with $CF_4$ was performed for formation of several nano-sized line patterns on Nb. Each EB-resist patterned samples with RTDs and CTDs were etched with two different $CF_4$ gas pressures of 5 Pa. Nb etching rate increases while GaAs (or ZEP) etching rate decreases as the chamber pressure increases. This different dependent of the etching rate on the $CF_4$ pressure between Nb and GaAs (or ZEP) has a significant meaning because selective etching of nano-sized Nb line patterns is possible without etching of the underlying active layer.

• 대한기계학회논문집B
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• 제38권8호
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• pp.709-714
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• 2014

리버스 옵셋 인쇄는 인쇄전자를 위한 미세 패터닝기술 중 하나로서 수 ${\mu}m$ 이하의 선폭을 구현할 수 있다. 옵셋 인쇄의 특성상 잉크는 PDMS 재질의 블랑켓에 전사된 후 음각으로 패턴된 클리쉐에 접촉하여 불필요한 패턴을 제거하게 되는데, 이 때 블랑켓은 압력에 의하여 음각 패턴 내부로 침투하는 변형이 발생한다. 이러한 변형은 인쇄 압력에 비례하며, 과도한 인쇄 압력은 넓은 면적의 패턴을 인쇄할 때 클리쉐 패턴의 바닥에 블랑켓이 닿는 불량을 일으키게 된다. 이 논문에서는 리버스 옵셋 인쇄에서 가압변위에 따른 PDMS 블랑켓의 변형을 유한요소기법을 이용하여 모델링하고 접촉압력 대비 변형량을 예측함으로써 실제 인쇄 장비의 실험 결과와 비교하여 인쇄결함이 발생하지 않도록 하는 클리쉐의 제작조건을 제시하고자 한다.

• 한국전기전자재료학회논문지
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• 제23권9호
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• pp.676-680
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• 2010

In this paper, Fin-type silicon-oxide-nitride-oxide-silicon (SONOS) flash memory are fabricated and the electrical characteristics are analyzed. Compared to the planar-type SONOS devices, Fin-type SONOS devices show good short channel effect (SCE) immunity due to the enhanced gate controllability. In memory characteristics such as program/erase speed, endurance and data retention, Fin-type SONOS flash memory are also superior to those of conventional planar-type. In addition, Fin-type SONOS device shows improved SCE immunity in accordance with the decrease of Fin width. This is known to be due to the fully depleted mode operation as the Fin width decreases. In Fin-type, however, the memory characteristic improvement is not shown in narrower Fin width. This is thought to be caused by the Fin structure where the electric field of Fin top can interference with the Fin side electric field and be lowered.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2013년도 제44회 동계 정기학술대회 초록집
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• pp.669-669
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• 2013

Hierarchical N doped TiO2 nanostructured catalyst with micro, meso and macro porosity have been synthesized by a facile self-formation route using ammonia and titanium isopropoxide precursor. The samples were calcined in different calcination temperature ranging from $300^{\circ}C$ to $800^{\circ}C$ at slow heating rate ($5^{\circ}C$/min) and designated as NHPT-300 to NHPT-800. $TiO_2$ nanostructured catalyst have been characterized by physico-chemical and spectroscopy methods to explore the structural, electronic and optical properties. UV-Vis diffuse reflectance spectra confirmed the red shift and band gap narrowing due to the doping of N species in TiO2 nanoporous catalyst. Hierarchical macro porosity with fibrous channel patterning was observed (confirmed from FESEM) and well preserved even after calcination at $800^{\circ}C$, indicating the thermal stability. BET results showed that micro and mesoporosity was lost after $500^{\circ}C$ calcination. The photocatalytic activity has been evaluated for methanol oxidation to formaldehyde in visible light. The enhanced photocatalytic activity is attributed to combined synergetic effect of N doping for visible light absorption, micro and mesoporosity for increase of effective surface area and light harvestation, and hierarchical macroporous fibrous structure for multiple reflection and effective charge transfer.

• 한국재료학회:학술대회논문집
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• 한국재료학회 2011년도 춘계학술발표대회
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• pp.3.1-3.1
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• 2011

Over the past decade, the major efforts for lowering the cost of electronics has been devoted to increasing the packaging efficiency of the integrated circuits (ICs), which is defined by the ratio of all devices on system-level board compared to the area of the board, and to working on a larger but cheaper substrates. Especially, in flexible electronics, the latter has been the favorable way along with using novel nanomaterials that have excellent mechanical flexibility and electrical properties as active channel materials and conductive films. Here, the tool for achieving large area patterning is by printing methods. Although diverse printing methods have been investigated to produce highly-aligned structures of the nanomaterials with desired patterns, many require laborious processes that need to be further optimized for practical applications, showing a clear limit to the design of the nanomaterial patterns in a large scale assembly. Here, we demonstrate the alignment of highly ordered and dense silicon (Si) NW arrays to anisotropically etched micro-engraved structures using a simple evaporation process. During evaporation, entropic attraction combined with the internal flow of the NW solution induced the alignment of NWs at the corners of pre-defined structures. The assembly characteristics of the NWs were highly dependent on the polarity of the NW solutions. After complete evaporation, the aligned NW arrays were subsequently transferred onto a flexible substrate with 95% selectivity using a direct gravure printing technique. As proof-of-concept, flexible back-gated NW field effect transistors (FETs) were fabricated. The fabricated FETs had an effective hole mobility of 0.17 $cm2/V{\cdot}s$ and an on/off ratio of ${\sim}1.4{\times}104$. These results demonstrate that our NW gravure printing technique is a simple and effective method that can be used to fabricate high-performance flexible electronics based on inorganic materials.

• 한국전기전자재료학회논문지
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• 제14권2호
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• pp.93-98
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• 2001

YMnO$_3$ films are excellent gate dielectric materials of ferroelectric random access memories (FRAMs) with MFSFET (metal -ferroelectric-semiconductor field effect transistor) structure because YMnO$_3$ films can be deposited directly on Si substrate and have a relatively low permittivity. Although the patterning of YMnO$_3$ thin films is the requisite for the fabrication of FRAMs, the etch mechanism of YMnO$_3$ thin films has not been reported. In this study, YMnO$_3$thin films were etched with Cl$_2$/Ar gas chemistries in inductively coupled plasma (ICP). The maximum etch rate of YMnO$_3$ film is 285$\AA$/min under Cl$_2$/(Cl$_2$+Ar) of 1.0, RF power of 600 W, dc-bias voltage of -200V, chamber pressure of 15 mTorr and substrate temperature of $25^{\circ}C$. The selectivities of YMnO$_3$ over CeO$_2$ and $Y_2$O$_3$ are 2.85, 1.72, respectively. The selectivities of YMnO$_3$ over PR and Pt are quite low. Chemical reaction in surface of the etched YMnO$_3$ thin films was investigated with X-ray photoelectron spectroscopy (XPS) surface of the selected YMnO$_3$ thin films was investigated with X-ray photoelectron spectroscopy(XPS) and secondary ion mass spectrometry (SIMS). The etch profile was also investigated by scaning electron microscopy(SEM)

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2004년도 춘계학술대회 논문집 디스플레이 광소자분야
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• pp.86-89
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• 2004

Organic thin film transistors (OTFTs) are fabricated on the plastic substrate through 4-level mask process without photolithographic patterning to yield the simple fabrication process. And we herewith report for the effect of dielectric surface modification on the electrical characteristics of OTFTs. The KIST-JM-1 as an organic molecule for the surface modification is deposited onto the surface of zirconium oxide $(ZrO_2)$ gate dielectric layer. In this work, we have examined the dependence of electrical performance on the interface surface state of gate dielectric/pentacene, which may be modified by chemical properties in the gate dielectric surface.

• 대한공간정보학회지
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• 제7권2호
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• pp.23-34
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• 1999

RMSE는 그 개념이 상대적으로 이해하기 쉽고 계산이 용이하다는 장점 때문에 DEM의 정확도를 나타내는 대표적 척도로 많은 국가에서 사용되고 있다. 그러나 이러한 장점에도 불구하고 RMSE는 몇 가지 측면에서 문제를 안고 있다. 즉 RMSE는 두 가지 자료집단 사이의 평균적인 편차에 대한 기술을 밝혀낼 수 없기 때문에 DEM이 내포하고 있는 오차에 대한 분포나 패턴에 대한 해석이 불가능하다. 이것은 DEM의 품질을 기술하는데 RMSE 척도가 어느 정도 한계를 갖는다는 것을 의미한다. 본 연구에서는 탐색적 공간자료분석 범주에 속하는 접근 방법을 통해 RMSE가 밝히지 못하는 DEM의 공간적 비공간적 오차 특성을 탐색하여 그 이용가능성을 평가하였다. 이를 통해 대표적 보간기법을 적용하여 개발된 DEM에서 돌출 현상이나 줄무늬 현상 또는 단구화 현상 등과 같은 새로운 정오차를 확인하였다.

• 한국산학기술학회논문지
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• 제5권3호
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• pp.197-203
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• 2004

나노미터 크기의 임의형상 패턴을 새기기 위하여 노광기술이 사용된다. 광노광에서 자외선과 엑스레이 같은 전자기파가 나노미터 크기로 형상을 새긴 마스크 위에 조사되면 회절현상은 필연적으로 발생하며 마스크의 상이 불명확하게 웨이퍼 위에 맺히도록 한다. 볼록렌즈만이 프리어변환기 역할을 한다고 알려져 있으며 마스크 위에 패턴의 크기가 전자기파의 파장에 비교하여 매우 클 때에도 볼록렌즈를 사용하면 프리어변환시키는 것이 가능하다. 본 논문에서 설명하는 방법으로 마스크를 준비하여 렌즈 앞에 놓고 레이저 빔으로 조사하면 프리어 평면이라 알려진 평면 위에서만 나노미터 크기의 패턴이 형성된다. 이 방법은 매우 단순한 장치로 구성되어 있고, 현재 혹은 차세대 노광인 자외선/극자외선 및 전자투사노광으로 제작한 최소선폭과 비교해 볼 때 손색이 없다. 여기서는 프리어광학을 이용하여 이론적인 연구결과를 보이고 있지만 가까운 장래에 실험결과로 이론적인 접근을 증명할 수 있을 것이다.