• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.16 no.12
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• pp.1097-1102
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• 2003

In this paper, we used only PR as etching mask, while it used usually Cr/AU as etching mask, and in order to fabricate a photosensor has the increased sensitivity, we investigated on the sensitivity of general type and p-i-n type diode. we designed microchannel size width max 10um, min 5um depth max 10um, reservoir size max 100um, min 2mm. Fabrication of microfluidic devices in glass substrate by glass wet etching methods and glass to glass fusion bonding. The p-i-n diode has higher sensitivity than photodiode, Considering these results, we fabricated p-i-n diodes on the high resistive(4㏀$.$cm) wafer into rectangle and finger pattern and compared internal resistance of each pattern. The internal resistance of pin diode can be decreased by the application of finger pattern has parallel resistance structure from 571Ω to 393Ω.

• Journal of the Korean Society for Precision Engineering
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• v.24 no.12
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• pp.50-56
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• 2007

Femtosecond laser ablation of the Invar alloy and hole drilling for a shadow mask are studied. We used a regenerative amplified Ti-sapphire laser with a 1kHz repetition rate, 184fs pulse duration and 785nm wavelength. Femtosecond laser pulse was irradiated on the Invar alloy with air blowing at the condition of various laser peak power. An ablation characteristic of the Invar alloy was appeared non-linear at $125J/cm^2$ of energy fluence. For the application to a shadow mask, the hole drilling of the Invar alloy with the cross section of a trapezoidal shape was investigated. The ablated micro-holes were characterized using an atomic force microscopy(AFM). The optimal condition of hole pattern f3r a shadow mask was $4\;{\mu}m$ z-axis feed rate, 0.2mm/s circular velocity, $26.4{\mu}J$ laser peak power. With the optimal processing condition, the fine circular hole shape without burr and thermal damage was achieved. Using the femtoseocond laser system, it demonstrates excellent tool for the Invar alloy micro-hole drilling without heat effects and poor edge.

• Transactions of the Korean Society of Mechanical Engineers A
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• v.24 no.9 s.180
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• pp.2371-2380
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• 2000

In this paper, we developed the proximity exposure system with the vertical structure of glass and mask stage to minimize the mask's warp caused by the pull of gravity. This system, which canirradiate the ultra violet through 1440 H 850 $\textrm{mm}^2$ and 1330X 1015 $\textrm{mm}^2$ exposure area, has the followingcharacteristics. The glass stage can be inclined by 80 degrees at vertical structure to load substrate withsafety on it. When the glass stage is the vertical state, the gap control, alignment control and exposureof ultra violet are executed. So, it enhances the pattern uniformity by minimizing the mask's warp. Theglass stage can also control the gap between the mask and the substrate by the coarse and fine motioncontrol. The mask stage can adjust the posture of photomask to the position of substrate by imageprecessing method. The galss stage for the gap control and the mask stage for the alignment aredesigned independently for each function.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2005.10a
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• pp.318-321
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• 2005

FIB (Focused ion Beam) milling on a 500-nm-thick silicon nitride membrane was studied in order to fabricate a high-resolution shadow mask, or called a nanostencil. The silicon nitride membrane was fabricated by MEMS processes of LPCVD, photolithography, ICP etching and bulk silicon etching. The apertures made by FIB milling and normal photolithography were compared. The square metal pattern deposited through FIB milled shadow mask showed 6 times smaller comer radius than the case of photolithography. The results show high resolution patterning could be achieved by local deposition through FIB milled shadow-mask.

• Transactions of the Korean Society of Mechanical Engineers A
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• v.20 no.4
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• pp.1202-1215
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• 1996

In this study, in order to achieve the uniformity of mechanical properties and microstructures of a hot-rolled coil in the transversal direction, the edge mask device is newly device is newly developed and installed at the upper laminar-flow cooling head in the run out table, which controls the transversal temperature of strip with enco panel and bar edge heater. The device that is transversally movable prevents the temperature drop of strip edge by blocking the cooling water into the strip edge. So, the pattern of edge mask set-up condition of the device was derived by analyzing the characteristics of strip temperature and mechanical properties according to the on-line application of edge mask.

• Korean Journal of Optics and Photonics
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• v.16 no.6
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• pp.508-515
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• 2005

We propose a fabrication method for refractive lens by variable velocity moving mask lithography and slit pattern. Distribution of exposure dose should be controlled for the curved photoresist surface that works as a refractive surface. We analyze theoretically the distribution of exposure dose by change of moving velocity, moving direction of mask and the shape of mask pattern, and confirm for the curved surface experimentally. The lens could have sag height of a few of hundreds ${\mu}m$, by using thick photoresist or Deep RIE process.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.26 no.8
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• pp.1136-1141
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• 2022

Researches of face recognition on masked faces have been increasingly important due to the COVID-19 pandemic. To realize a stable and practical recognition performance, large amount of facial image data should be acquired for the purpose of training. However, it is difficult for the researchers to obtain masked face images for each human subject. This paper proposes a novel method to synthesize a face image and a virtual mask pattern. In this method, a pair of masked face image and unmasked face image, that are from a single human subject, is fed into a convolutional autoencoder as training data. This allows learning the geometric relationship between face and mask. In the inference step, for a unseen face image, the learned convolutional autoencoder generates a synthetic face image with a mask pattern. The proposed method is able to rapidly generate realistic masked face images. Also, it could be practical when compared to methods which rely on facial feature point detection.

• Proceedings of the KSME Conference
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• 2004.04a
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• pp.978-982
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• 2004

We present high aspect ratio 100nm-scale nickel stamper using e-beam lithography process and Cr/Qz mask for the injection molding process of nano grating patterns. Conventional photolithography blank mask (CrON/Cr/Qz) consists of quartz substrate, Cr layer of UV protection and CrON of anti-reflection layer. We have used Cr/Qz blank mask without anti-reflection layer of CrON which is non-conductive material and ebeam lithography process in order to simplify the nickel electroplating process. In nickel electroplating process, we have used Cr layer of UV protection as seed layer of nickel electroplating. Fabrication conditions of photolithography mask using e-beam lithography are optimized with respect to CrON/Cr/Qz blank mask. In this paper, we have optimized e-beam lithography process using Cr/Qz blank mask and fabricated nickel stamper using Cr seed layer. CrON/Cr/Qz blank mask and Cr/Qz blank mask require optimal e-beam dosage of $10.0{\mu}C/cm^2$ and $8.5{\mu}C/cm^2$, respectively. Finally, we have fabricated $116nm{\pm}6nm-width$ and $240nm{\pm}20nm-height$ nickel grating stamper for the injection molding pattern.

• Journal of the Institute of Electronics Engineers of Korea SP
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• v.40 no.4
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• pp.227-236
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• 2003

This paper proposes a modified jointly-blue noise mask (MJBNM) method using the S-CIELAB color measure as digital color halftoning method. Based on an investigation of the relation between the pattern visibility and the chromatic error, of a blue noise pattern, a halftoning method is proposed that reduces the chromatic error, while preserving a high quality blue noise pattern. Accordingly, to reduce the chrominance error, the low-pass filtered error and S-CIELAB chrominance error are both considered during the mask generation procedure and calculated for single and combined patterns. Using the calculated low-pass filtered error, the patterns are then updated by either adding or removing dots from the multiple binary patterns. Finally, the pattern exhibiting the lower S-CIELAB chrominance error is selected. Experimental results demonstrated that the proposed algorithm can produce a visually pleasing half toned image with a lower chrominance error than the JBNM method.

• Journal of the Korean Institute of Telematics and Electronics
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• v.18 no.4
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• pp.34-42
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• 1981

A 512-bit Task Programmable ROM has been designed and fabricated using PMOS technology. The content of the memory was written through the gate pattern during the fabrication process, and was checked by displaying the output of the chip on an oscilloscope with 512(32$\times$16) matrix points. The operation of the chip was surcessful with operating voltage from -6V to -l2V, The power consumption and propagation delay time have been measured to be 3mW and 13 $\mu$sec, respectively at -6 Volt. The power consunption increased to 27mW and propagation delay time decreased to 3$\mu$sec at -12V. The output of the chip was capable of driving the input of a TTL gate directly and retained a high impedence state when the chip solect function disabled the output.