• Journal of the Korean Institute of Telematics and Electronics D
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• v.34D no.6
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• pp.20-32
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• 1997

An optimum parasitic inductance is observed for maximizing the modulation bandwidth of the multiple quantum well (MQW) electro-absorption optical modulator. For 1.1 pF device cpaacitance of the current MQW optical modulator, the optimum parasitic inductances for maximum bandwidth are calculated for different terminating resistors. In ase of 50.ohm. terminating resistor, the 3-dB modulation bandwidth can be increased 45% wider by using the optimum parasitic inductance than nothing parasitic inductance. This calculated optimum inductance can be practically implemented, since the parasitic inductance of bondwires can be accurately analyzed using the method of moments (MoM) and controlled by changing the length and shpae of bondwires.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.493-493
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• 2014

The manufacturing cost of thin-film photovoltics can potentially be lowered by minimizing the amount of a semiconductor material used to fabricate devices. Thin-film solar cells are typically only a few micrometers thick, whereas crystalline silicon (c-Si) wafer solar cells are $180{\sim}300\mu}m$ thick. As such, thin-film layers do not fully absorb incident light and their energy conversion efficiency is lower compared with that of c-Si wafer solar cells. Therefore, effective light trapping is required to realize commercially viable thin-film cells, particularly for indirect-band-gap semiconductors such as c-Si. An emerging method for light trapping in thin film solar cells is the use of metallic nanostructures that support surface plasmons. Plasmon-enhanced light absorption is shown to increase the cell photocurrent in many types of solar cells, specifically, in c-Si thin-film solar cells and in poly-Si thin film solar cell. By proper engineering of these structures, light can be concentrated and coupled into a thin semiconductor layer to increase light absorption. In many cases, silver (Ag) nanoparticles (NP) are formed either on the front surface or on the rear surface on the cells. In case of poly-Si thin film solar cells, Ag NPs are formed on the rear surface of the cells due to longer wavelengths are not perfectly absorbed in the active layer on the first path. In our cells, shorter wavelengths typically 300~500 nm are also not effectively absorbed. For this reason, a new concept of plasmonic nanostructure which is NPs formed both the front - and the rear - surface is worth testing. In this simulation Al NPs were located onto glass because Al has much lower parasitic absorption than other metal NPs. In case of Ag NP, it features parasitic absorption in the optical frequency range. On the other hand, Al NP, which is non-resonant metal NP, is characterized with a higher density of conduction electrons, resulting in highly negative dielectric permittivity. It makes them more suitable for the forward scattering configuration. In addition to this, Ag NP is located on the rear surface of the cell. Ag NPs showed good performance enhancement when they are located on the rear surface of our cells. In this simulation, Al NPs are located on glass and Ag NP is located on the rear Si surface. The structure for the simulation is shown in figure 1. Figure 2 shows FDTD-simulated absorption graphs of the proposed and reference structures. In the simulation, the front of the cell has Al NPs with 70 nm radius and 12.5% coverage; and the rear of the cell has Ag NPs with 157 nm in radius and 41.5% coverage. Such a structure shows better light absorption in 300~550 nm than that of the reference cell without any NPs and the structure with Ag NP on rear only. Therefore, it can be expected that enhanced light absorption of the structure with Al NP on front at 300~550 nm can contribute to the photocurrent enhancement.

• Journal of the Institute of Electronics Engineers of Korea TC
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• v.46 no.11
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• pp.50-55
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• 2009

In this paper, a distributed amplifier is designed using distributed network synthesis that provides the optimum absorption capability of a capacitance. Transfer functions of filters, which consist of the amplifier, are synthesized by a low-pass Chebyshev approximation. Capacitances that a filter network can absorb are calculated as a function of its minimum insertion loss(MIL) and ripple. Active devices in a distributed amplifier are modeled as equivalent circuits by using their S-parameters, and their equivalent capacitances are absorbed into filter structures by properly adjusting the MIL and ripple of a transfer function. As an application example, a distributed amplifier with the gain of about 12.5dB is designed that operates over the frequency range between 0.1 and 7.5GHz. Experimental results prove that distributed network synthesis, which considers capacitance absorption capability, is useful to the design of distributed amplifiers.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.27 no.4
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• pp.399-402
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• 2016

We propose a thin electromagnetic wave absorber using varactor diodes combined with intentionally introduced multiple slits, which enables continuous sweep of an absorption frequency band throughout relatively wide frequencies. The absorption frequency range of conventional electrically tunable absorbers has been restricted by high capacitance of varactor diodes. In order to overcome the problem, we introduce parasitic capacitance and connect them with varactors in series, which reduces the total capacitance dramatically. As a result, we can raise the operating absorption frequency up to the X-band region. Moreover, we can also control the operating frequencies by modifying the number of slits with little change in an entire frequency sweep range. Good agreement between simulated and measured results show the validity of our proposal.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.30 no.3
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• pp.181-189
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• 2019

In this study, a triple-band antenna that can be used in WLAN(Wireless Local Area Network) at 2.4 GHz, 5.8 GHz, and 5G at 3.5 GHz is fabricated. The proposed antenna uses a parasitic element to show the triple band, and the reflector is used at a distance of ${\lambda}/4$ from the antenna to reduce the Specific Absorption Rate(SAR). Its dimensions are $100{\times}75{\times}1.6mm^3$ and each parameter value is optimized for better performance and a lower SAR value. As a result, we obtained a bandwidth of 540 MHz(2.02~2.56 GHz), 390 MHz(3.39~3.78 GHz), and 1,210 MHz(5.56~6.77 GHz) based on the reflection loss factor of -10 dB. In addition, the SAR values of the antenna with reflector are observed to reduce below the SAR value of international standard.

• Journal of Electrical Engineering and Technology
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• v.8 no.4
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• pp.850-855
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• 2013

This paper proposes a novel design for a compact, high-isolation WCDMA indoor repeater antenna. The proposed antenna consists of a patch antenna and metamaterial absorber. The required WCDMA bandwidth is obtained by utilizing the coupling between the main and the parasitic patches. In addition, high isolation is achieved using the metamaterial absorber, which has an absorption of about 98% at 2.1 GHz. Overall, the proposed antenna has a gain of over 7 dBi, a Voltage Standing Wave Ratio (VSWR) of less than 2, more than 85 dB of isolation between the service and donor antennas over the WCDMA band and a total volume of the proposed antenna only $70mm{\times}70mm{\times}43.8mm$.

• Current Photovoltaic Research
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• v.10 no.1
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• pp.23-27
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• 2022

In this study, we investigate organic-inorganic halide perovskite solar cells with a vacuum thermal evaporated hole transporting layer (NPB/MoO_3-x). By replacing solution process based Spiro-MeOTAD with vacuum thermal evaporation based NPB/MoO_3-x, a thin hole transporting layer was implemented. In addition, parasitic absorption that may occur during the doping process was eliminated by excluding solution process doping. In a solar cell with a thin vacuum thermal evaporated hole transporting layer, the short-circuit current density (Jsc) increased to 23.93 mA/cm², resulting in the highest power converstion efficiency (PCE) at 18.76%. Considering these results, it is essential to control the thickness of hole transporting layer located at the top in solar cell configuration.

• Journal of the Institute of Electronics Engineers of Korea TC
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• v.49 no.6
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• pp.57-62
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• 2012

In this paper, WCDMA indoor repeater antenna using an absorber based on metamaterial structure for high isolation is proposed. The proposed antenna consist of the main patch with the absorber based on metamaterial structure and parasitic patch. The WCDMA bandwidth is obtained by utilizing the coupling between the main and parasitic patches. The size of the absorber based on metamaterial structure is $13mm{\times}13mm$, the absorption is about 94 % at 2.18 GHz. The isolation characteristic of proposed WCDMA indoor repeater antenna between the service and donor antennas is improved by using a absorber based on metamaterial. The proposed WCDMA indoor repeater antenna has a gain higher than 6 dBi with a VSWR less than 2, and an isolation between the service and donor antennas greater than 85 dB over the WCDMA band from 1.92 GHz to 2.17 GHz. And size of the proposed antenna is $75mm{\times}75mm$.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.34 no.4
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• pp.251-255
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• 2021

a-Si is commonly considered as a primary candidate for the formation of passivation layer in heterojunction (HIT) solar cells. However, there are some problems when using this material such as significant losses due to recombination and parasitic absorption. To reduce these problems, a wide bandgap material is needed. A wide bandgap has a positive influence on effective transmittance, reduction of the parasitic absorption, and prevention of unnecessary epitaxial growth. In this paper, the adoption of a-SiO_x:H as the intrinsic layer was discussed. To increase lifetime and conductivity, oxygen concentration control is crucial because it is correlated with the thickness, bonding defect, interface density (D_it), and band offset. A thick oxygen-rich layer causes the lifetime and the implied open-circuit voltage to drop. Furthermore the thicker the layer gets, the more free hydrogen atoms are etched in thin films, which worsens the passivation quality and the efficiency of solar cells. Previous studies revealed that the lifetime and the implied voltage decreased when the a-SiOx thickness went beyond around 9 nm. In addition to this, oxygen acted as a defect in the intrinsic layer. The D_it increased up to an oxygen rate on the order of 8%. Beyond 8%, the D_it was constant. By controlling the oxygen concentration properly and achieving a thin layer, high-efficiency HIT solar cells can be fabricated.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.30 no.3
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• pp.192-197
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• 2017

Hydrogenated Amorphous Silicon (a-Si:H) is used as an emitter layer in HIT (heterojunction with Intrinsic Thin layer) solar cells. Its low band gap and low optical properties (low transmittance and high absorption) cause parasitic absorption on the front side of a solar cell that significantly reduces the solar cell blue response. To overcome this, research on CSC (carrier Selective Contacts) is being actively carried out to reduce carrier recombination and improve carrier transportation as a means to approach the theoretical efficiency of silicon solar cells. Among CSC materials, molybdenum oxide ($MoO_x$) is most commonly used for the hole transport layer (HTL) of a solar cell due to its high work function and wide band gap. This paper analyzes the electrical and optical properties of $MoO_x$ thin films for use in the HTL of HIT solar cells. The optical properties of $MoO_x$ show better performance than a-Si:H and ${\mu}c-SiO_x:H$.