• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.17 no.10
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• pp.1041-1048
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• 2004

Chemical mechanical polishing (CMP) process was studied in terms of tribology in this paper. CMP performed by the down force and the relative motion of pad and wafer with slurry is typically tribological system composed of friction, wear and lubrication. The piezoelectric quartz sensor for friction force measurement was installed and the friction force was detected during CMP process. Various friction signals were attained and analyzed with the kind of pad, abrasive and abrasive concentration. As a result of experiment, the lubrication regime is classified with ηv/p(η, v and p; the viscosity, relative velocity and pressure). The characteristics of friction and material removal mechanism is also different as a function of the kind of abrasive and the abrasive concentration in slurry. Especially, the material removal per unit distance is directly proportional to the friction force and the non~uniformity has relation to the coefficient of friction.

• Transactions of Materials Processing
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• v.13 no.3
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• pp.225-229
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• 2004

Chemical Mechanical Polishing(CMP) process becomes one of the most important semiconductor processes. But the basic mechanism of CMP still does not established. Slurry fluid dynamics that there is a slurry film between a wafer and a pad and contact mechanics that a wafer and a pad contact directly are the two main studies for CMP. This paper based on the latter one, especially on the abrasion wear model. Material Removal Rate(MRR) is calculated using the trajectory length of every point on a wafer during the process time. Both the rotational velocity of a wafer and a pad and the wafer oscillation velocity which has omitted in other studies are considered. For the purpose of the verification of our simulation, we used the experimental results of S.H.Li et al. The simulation results show that the tendency of the calculated MRR using the relative velocity is very similar to the experimental results and that the oscillation effect on MRR at a real CMP condition is lower than 1.5%, which is higher than the relative velocity effect of wafer, and that the velocity factor. not the velocity itself, should be taken into consideration in the CMP wear model.

• Proceedings of the Korean Geotechical Society Conference
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• 2008.10a
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• pp.1693-1706
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• 2008

It is of importance to determine the zero effective stress void ratio($e_{00}$), which is the void ratio at effective stress equal to zero, and the relationships of void ratio-effective stress and of void ratio-hydraulic conductivity for characterizing non-liner finite strain consolidation behavior for ultra-soft dredged materials. The zero effective stress void ratio means a transitional status from sedimentation to self-weight consolidation of very soft soil deposits, and acts as a starting point for self-weight consolidation in the non-linear finite strain numerical analysis such as PSDDF. In this paper, a new method for determining the zero effective stress void ratio has been introduced with the aid of measuring electrical resistivity of the specimen. A correlation between the zero effective stress void ratio and the initial slurry void ratio has been proposed, which can be used in PSDDF analysis as an input parameter. Combining all of the accessible experimental data, the consolidation characteristics of a dredged soil from the Incheon area has been studied in detail.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.17 no.4
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• pp.378-383
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• 2004

Tungsten is widely used as a plug for the multi-level interconnection structures. However, due to the poor adhesive properties of tungsten(W) on SiO$_2$ layer, the Ti/TiN barrier layer is usually deposited onto SiO$_2$ for increasing adhesion ability with W film. Generally, for the W-CMP(chemical mechanical polishing) process, the passivation layer on the tungsten surface during CMP plays an important role. In this paper, the effect of oxidant on the polishing selectivity of W/Ti/TiN layer was investigated. The alumina(A1$_2$O$_3$)-based slurry with $H_2O$$_2$ as the oxidizer was used for CMP applications. As an experimental result, for the case of 5 wt％ oxidizer added, the removal rates were improved and polishing selectivity of 1.4:1 was obtained. It was also found that the CMP characteristics of W and Ti metal layer including surface roughness were strongly dependent on the amounts of $H_2O$$_2$ oxidizer.

• Transactions on Electrical and Electronic Materials
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• v.7 no.4
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• pp.157-162
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• 2006

Chemical-mechanical polishing (CMP), one of the dominant technology for ULSI planarization, is used to flatten the micro electro-mechanical systems (MEMS) structures. The objective of this paper is to achieve good planarization of the deposited film and to improve deposition efficiency of subsequent layer structures by using surface-micromachining process in MEMS technology. Planarization characteristic of poly-Si film deposited on thin oxide layer with MEMS structures is evaluated with different slurries. Patterns used for this research have shapes of square, density, line, hole, pillar, and micro engine part. Advantages of CMP process for MEMS structures are observed respectively by using the test patterns with structures larger than 1 urn line width. Preliminary tests for material selectivity of poly-Si and oxide are conducted with two types of silica slurries: $ILD1300^{TM}\;and\;Nalco2371^{TM}$. And then, the experiments were conducted based on the pretest. A selectivity and pH adjustment of slurry affected largely step heights of MEMS structures. These results would be anticipated as an important bridge stone to manufacture MEMS CMP slurry.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.05c
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• pp.149-153
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• 2003

Chemical mechanical polishing (CMP) technology for global planarization of multi-level inter-connection structure has been widely studied for the next generation devices. CMP process has been paid attention to planarized pre-metal dielectric (PMD), inter-layer dielectric (ILD) interconnections. Expecially, shallow trench isolation (STI) used to CMP process on essential. Recently, the direct STI-CMP process without the conventional complex reverse moat etch process has established by using slurry additive with the high selectivity between $SiO_2$ and $Si_3N_4$ films for the purpose of process simplification and n-situ end point detection(EPD). However, STI-CMP process has various defects such as nitride residue, tom oxide and damage of silicon active region. To solve these problems, in this paper, we studied the planarization characteristics using a high selectivity slurry(HSS). As our experimental results, it was possible to achieve a global planarization and STI-CMP process could be dramatically simplified. Also we estimated the reliability through the repeated tests with the optimized process conditions in order to identify the reproducibility of HSS STI-CMP process.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.07a
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• pp.247-251
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• 2004

Chemical-Mechanical Polishing(CMP) especially is becoming one of the most important ULSI processes for the 0.25m generation and beyond. And there are many elements affecting CMP performance such as slurry, pad, process parameters and pad conditioning. Among these elements the CMP pad is considered one of the most important because of its change. But the surface of the pad has irregular pores, so there is non-uniformity of slurry flow and of contact area between wafer and the pad, and glazing occurs on the surface of the pad. So we make CMP pad with micro structure using micro molding method. This paper introduces the basic concept and fabrication technique of CMP pad with micro-structure and the characteristic of polishing. Experimental results demonstrate the removal rate, uniformity, and time vs. removal rate.

• Geomechanics and Engineering
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• v.32 no.3
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• pp.293-305
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• 2023

To ensure the safety of underground infrastructures, ground can sometimes be first treated by cement slurry and then stabilized using artificial ground freezing (AGF) technique before excavation. The hydration heat produced by cement slurry increases the soil temperature before freezing and results in an extension of the active freezing time (AFT), especially when the Metro Jet System (MJS) treatment is adopted due to a high cement-soil ratio. In this paper, by taking advantage of an on-going project, a case study was performed to evaluate the influence of MJS and AGF on the ground temperature variation through on-site measurement and numerical simulation. Both on-site measurement and simulation results reveal that MJS resulted in a significant increase in the soil temperature after treatment. The ground temperature gradually decreases and then stabilized after completion of MJS. The initiation of AGF resulted in a quick decrease in ground temperature. The ground temperature then slowly decreased and stabilized at later freezing. A slight difference in ground temperature exists between the on-site measurements and simulation results due to limitations of numerical simulation. For the AGF system, numerical simulation is still strongly recommended because it is proven to be cost-effective for predicting the ground temperature variation with reasonable accuracy.

• KSCE Journal of Civil and Environmental Engineering Research
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• v.28 no.3C
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• pp.143-148
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• 2008

This paper demonstrates settling and further consolidation behaviour of dredged clayey soils during landfilling. The effects of initial moisture content, electrolyte type and concentration on settling and consolidation behaviour were examined and evaluated by laboratory column tests. Electrokinetic tests were carried out with modified settling column to compare the soil behaviour under the gravity. From the testing results, the settling velocity increased due to the effects of cations in the electrolyte solution, and electrically induced settlements were found to be greater than those under the gravity.

• Membrane Journal
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• v.18 no.2
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• pp.157-167
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• 2008

Removal of organic substances and taste/odor control are ones of the main issues in water supply, resulting in introduction of advanced processes such as ozon/GAC, or PAC. However, raw water quality deteriorates, new pollutants advent, so water quality is not acceptable enough even with those existing advanced processes. In this paper, a new advanced water treatment process using PAC slurry blanket, where PAC particles stay in the basin as slurry blanket, coupled with submerged membranes is introduced. A pilot plant $(80m^3/day)$ was installed to assess the performance of this new process using actual raw water, and DOC was removed higher than 90% in the beginning and $70{\sim}80%$ afterwards, while 2-MIB and geosmin were removed completely. This new process still requires future study on process optimization and long-term assessment, however it seems highly possible to countermeasure as a new advanced process with high removal efficiency.