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http://dx.doi.org/10.4313/JKEM.2004.17.10.1041

Characteristics of Friction Affecting CMP Results  

Park, Boumyoung (부산대학교 정밀기계공학과)
Lee, Hyunseop (부산대학교 정밀기계공학과)
Kim, Hyoungjae (부산대학교 정밀기계공학과)
Seo, Heondeok (부산대학교 정밀기계공학과)
Kim, Gooyoun (부산대학교 정밀기계공학과)
Jeong, Haedo (부산대학교 기계공학부)
Publication Information
Journal of the Korean Institute of Electrical and Electronic Material Engineers / v.17, no.10, 2004 , pp. 1041-1048 More about this Journal
Abstract
Chemical mechanical polishing (CMP) process was studied in terms of tribology in this paper. CMP performed by the down force and the relative motion of pad and wafer with slurry is typically tribological system composed of friction, wear and lubrication. The piezoelectric quartz sensor for friction force measurement was installed and the friction force was detected during CMP process. Various friction signals were attained and analyzed with the kind of pad, abrasive and abrasive concentration. As a result of experiment, the lubrication regime is classified with ηv/p(η, v and p; the viscosity, relative velocity and pressure). The characteristics of friction and material removal mechanism is also different as a function of the kind of abrasive and the abrasive concentration in slurry. Especially, the material removal per unit distance is directly proportional to the friction force and the non~uniformity has relation to the coefficient of friction.
Keywords
Chemical mechanical polishing; Friction force; Wear; Lubrication; Coefficient of friction; Material removal; Uniformity;
Citations & Related Records
Times Cited By KSCI : 1  (Citation Analysis)
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