Role of Oxidants for Metal CMP Applications
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서용진
(대불대학교 전기전자공학과)
김상용 (㈜동부아남반도체 Fab. 사업부) 이우선 (조선대학교 전기공학과) |
1 |
슬러리와 패드 변화에 따른 텅스텐 플러그 CMP 공정의 최적화
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과학기술학회마을 |
2 |
Effect of oxide and W-CMP on the material properties and electromigration behaviour of layered aluminum metallisations
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DOI ScienceOn |
3 |
The removal selectivity of titanium and aiuminum in chemiCai mechanical planarization
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DOI ScienceOn |
4 |
In-situ end point detection (EPD) of STI-CMP process using high selectivity slurry
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DOI ScienceOn |
5 |
Chemical mechanical polishing for fabhcating pat temed W metal feattlres as chip inter- connects
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DOI |
6 |
Chemical Mechanical Polishing (CMP)공정을 이용한 Multilevel 구조의 광역 평타노하에 관한 연구
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과학기술학회마을 |
7 |
Role of oxidizer on the chemical mechanical planarization of Ti/TiN barrier layer
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DOI ScienceOn |
8 |
Studies on passivation behavior of tungsten in applicatjon to chemical mechanical polishing
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DOI |
9 |
Surface chemistry studies of copper chemical mechanical p1anarization
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DOI ScienceOn |
10 |
STI-CMP 공정 적응을 위한 연마 정지점 고찰
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과학기술학회마을 |
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