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http://dx.doi.org/10.4313/JKEM.2004.17.4.378

Role of Oxidants for Metal CMP Applications  

서용진 (대불대학교 전기전자공학과)
김상용 (㈜동부아남반도체 Fab. 사업부)
이우선 (조선대학교 전기공학과)
Publication Information
Journal of the Korean Institute of Electrical and Electronic Material Engineers / v.17, no.4, 2004 , pp. 378-383 More about this Journal
Abstract
Tungsten is widely used as a plug for the multi-level interconnection structures. However, due to the poor adhesive properties of tungsten(W) on SiO$_2$ layer, the Ti/TiN barrier layer is usually deposited onto SiO$_2$ for increasing adhesion ability with W film. Generally, for the W-CMP(chemical mechanical polishing) process, the passivation layer on the tungsten surface during CMP plays an important role. In this paper, the effect of oxidant on the polishing selectivity of W/Ti/TiN layer was investigated. The alumina(A1$_2$O$_3$)-based slurry with $H_2O$$_2$ as the oxidizer was used for CMP applications. As an experimental result, for the case of 5 wt％ oxidizer added, the removal rates were improved and polishing selectivity of 1.4:1 was obtained. It was also found that the CMP characteristics of W and Ti metal layer including surface roughness were strongly dependent on the amounts of $H_2O$$_2$ oxidizer.
Keywords
CMP (chemical mechanical polishing); Oxidizer; Slurry; Selectivity; Removal rate.;
Citations & Related Records
Times Cited By KSCI : 3  (Citation Analysis)
연도 인용수 순위
1 슬러리와 패드 변화에 따른 텅스텐 플러그 CMP 공정의 최적화 /
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6 Chemical Mechanical Polishing (CMP)공정을 이용한 Multilevel 구조의 광역 평타노하에 관한 연구 /
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7 Role of oxidizer on the chemical mechanical planarization of Ti/TiN barrier layer /
[ V.S.Chathapuram;T.Du;K,B.Sundaram;V.Desai, ] / Microelectronic Engineering   DOI   ScienceOn
8 Studies on passivation behavior of tungsten in applicatjon to chemical mechanical polishing /
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9 Surface chemistry studies of copper chemical mechanical p1anarization /
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