• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2009년도 하계학술대회 논문집
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• pp.58-58
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• 2009

Uniformity related issues in chemical mechanical polishing (CMP) are within wafer non-uniformity (WIWNU), wafer to wafer non-uniformity (WTWNU), planarity and dishing/erosion. Here, the WIWNU that originates from spatial distribution of independent variables such as temperature, sliding distance, down force and material removal rate (MRR) during CMP, relies to spatial dependency. Among various sources of spatial irregularity, hardness and modulus of pad and surface roughness in sources for pad uniformity are great, especially. So, we investigated the spatial variation of pad surface characteristics using pad measuring system (PMS) and roughness measuring system. Reduced peak height ($R_{pk}$) of roughness parameter shows a strong correlation with the removal rate, and the distribution of relative sliding distance onwafer during polishing has an effect on the variation of $R_{pk}$ and WIWNU. Also, the results of pad wear profile thorough developed pad profiler well coincides with the kinematical simulation of conditioning, and it can contribute for the enhancement of WIWNU in CMP process.

• 생물환경조절학회지
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• 제19권4호
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• pp.195-202
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• 2010

수집 농산물의 세척, 선별, 포장 작업 등이 이루어지는 APC 작업장은 하절기에 작업자들이 고온의 환경에 노출되므로 작업환경 개선을 위한 냉방공조가 요구되고 있다. 기존의 전체 냉방 공조방식은 과도한 유지비로 인한 운용상의 어려움이 발생하고 있으므로 설비비 및 운용비가 상대적으로 저렴한 시스템을 적용할 필요가 있다. 본 연구에서는 하절기 APC 작업공간의 효율적 냉방을 위한 냉방시스템 설계의 기초 연구로써 CFD를 기반으로 하여 양압식 및 음압식 팬 앤 패드 시스템과 국소냉방 시스템에 대해 열유동 수치해석을 수행하여 각각의 냉방효과를 예측하였다. 그 결과, 음압식 팬 앤 패드 시스템은 고온 외기의 과도한 유업으로 인해 패드 하류의 일부 영역을 제외한 대부분의 작업영역에서 상대적으로 고온의 온도 분포를 보였으며 기류의 유속분포 역시 낮게 나타나 APC 냉방시스템으로 부적합한 것으로 판단되었다. 양압식 팬 앤 패드 시스템은 직업장의 중심부 및 각 작업영역에 비교적 균일한 저온환경을 조성하나 작업자 위치별로 기류의 유속편차가 크게 나타났다. 국소냉방 시스템의 경우 각 작업자 위치의 상부에서 냉기류가 공급되는 방식이므로 팬 앤 패드 시스템에 비해 작업자 위치에서의 온도분포와 기류 유속분포가 상대적으로 균일하게 나타났다. 양압식 팬 앤 패드 시스템은 냉방기를 사용하는 기존의 공조방식에 비해 설비비 및 유지비가 저렴하나, 실제 APC 작업장의 냉방공조에 적용시에는 팬 소음, 고습환경이 선별기 등 장비에 미치는 영향, 용수공급 및 패드교체 등을 고려하여 보다 신중한 검토가 요구된다.

• 항공우주기술
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• 제4권2호
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• pp.126-134
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• 2005

발사체는 발사되기 수일 전에 발사탑에 세워져 체크과정 및 연료공급 등을 수행하게 되므로 발사까지는 계속 외부의 열환경에 노출되게 된다. 발사체의 페어링에 대한 발사전 가열 해석(Prelaunch Thermal analysis)은 발사시 페어링의 최대/최소 온도 예측 및 공조 설비(air conditioning system)의 성능 예측을 목적으로 수행된다. 본 연구에서는 범용 열해석 프로그램인 Sinda/Fluint 이용하여 Delta II 페어링에 대하여 발사전 가열 해석을 수행하였으며, 그 결과를 Delta II 보고서 자료와 비교 및 분석하였다.

• 한국전기전자재료학회논문지
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• 제11권12호
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• pp.1084-1090
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• 1998

As device sizes are scaled down to submicron dimensions, planarization technology becomes increasingly important for both device fabrication and formation of multilevel interconnects. Chemical mechanical polishing (CMP) has emerged recently as a new processing technique for achieving a high degree of planarization for submicron VLSI applications. The polishing process has many variables, and most of which are not well understood. The factors determine the planarization performance are slurry and pad type, insert material, conditioning technique, and choice of polishing tool. Circuit density, pattern size, and wiring layout also affect the performance of a CMP planarization process. This paper presents the results of studies on CMP process window characterization for 0.35 micron process with 5 metal layers.

• Transactions on Electrical and Electronic Materials
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• 제8권2호
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• pp.53-57
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• 2007

In this study, a novel slurry containing ceria as the abrasive particles was analyzed in terms of its frictional, thermal and kinetic attributes for interlayer dielectric (ILD) CMP application. The novel slurry was used to polish 200-mm blanket ILD wafers on an $IC1000_{TM}$ K-groove pad with in-situ conditioning. Polishing pressures ranged from 1 to 5 PSI and the sliding velocity ranged from 0.5 to 1.5 m/s. Shear force and pad temperature were measured in real time during the polishing process. The frictional analysis indicated that boundary lubrication was the dominant tribological mechanism. The measured average pad leading edge temperature increased from 26.4 to $38.4\;^{\circ}C$ with the increase in polishing power. The ILD removal rate also increased with the polishing power, ranging from 400 to 4000 A/min. The ILD removal rate deviated from Prestonian behavior at the highest $p{\times}V$ polishing condition and exhibited a strong correlation with the measured average pad leading edge temperature. A modified two-step Langmuir-Hinshelwood kinetic model was used to simulate the ILD removal rate. In this model, transient flash heating temperature is assumed to dominate the chemical reaction temperature. The model successfully captured the variable removal rate behavior at the highest $p{\times}V$ polishing condition and indicates that the polishing process was mechanical limited in the low $p{\times}V$ polishing region and became chemically and mechanically balanced with increasing polishing power.

• Transactions on Electrical and Electronic Materials
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• 제8권1호
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• pp.15-20
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• 2007

Conditioner wear, copper polish rates, pad temperature and coefficient of friction (COF) are measured for two novel Mitsubishi Materials Corporation designs during an extended wear and polishing test. Both designs are coated with a $Teflon^{TM}$ film to reduce substrate wear and chemical attack. Using optical interferometry, changes in the coating that result in gradual changes in diamond exposure are measured. Theories of the COF, conditioning, and polishing are applied to explain the observed performance differences between the designs.

• Design & Manufacturing
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• 제14권3호
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• pp.37-43
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• 2020

Progressive drawing processing is one of the manufacturing processes used to mass-produce a variety of products on the industrial site. In this study, the goal is to achieve a uniform product thickness of at least 1.3mm by reducing the wall thickness of the coupler parts used in automotive air conditioning systems to within 15% using A5052-H32 materials. The progressive die was designed using Blank's law of volume invariance. Due to the characteristics of the drawing process, the material thickness in the punch R part decreases and the thickness in the die R part increases. When designing the progressive die of the coupler part, an ironing method, a push back method, and a stand-alone die pad method were applied to each process to design a mold in consideration of the drawing rate and to artificially adjust the thickness change. The suitability of the method used in die design was investigated by measuring the thickness change of forming parts for each process. In the final part, it was confirmed that the thickness measurement values of the five regions of a radial line were implemented as 1.34-1.36 mm.

• Journal of Periodontal and Implant Science
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• 제32권1호
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• pp.13-23
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• 2002

The ultimate goal of periodontal therapy is directed to arresting the progression of the disease, and regenerating the fibrous attachment. In order to achieve such treatment aim, the plaque and calculus must be eliminated and the physiological conditions of the root surface must be changed to facilitate the attachment and migration of the new fibroblasts, The method of changing the proper root surface conditions to promote the healing of periodontal tissue involves mechanical procedures, such as scaling and root planing, and chemical procedures such as tetracycline-HCl. However, the formation of a long junctional epithelium was most frequently observed type of healing. Thus, the aim of this study was to examine in vitro the influence of surface conditioning of dentin by TC-HCl on human gingival epithelial cell attachment. Human gingival epithelial cells were obtained from healthy retromolar pad area(under the age 23 years). Seventy two teeth extracted from severe periodontitis were used as study material. To evaluate the epithelial cell attachment to dentin, the prepared specimen was divided to four groups. For the control group, only scaling and root planing were carried out, and for the test group, 1 to 3, the concentration of the TC-HCl was 50, 125 and 250mg/ml respectively. After cell cultivation time of 1-, 3-. 24 hour, for the indirect quantitative assessment of gingival epithelial cell attached to dentin sample, the absorbance of epithelial cell unattached to dentin was measured. The results were as follows; 1. There was no statistically significant difference between scaling and root planing group and TC-HCl 50mg/ml 125mg/ml and 250mg/ml group about absorbance of unattached epithelial cell to dentin sample(p>0.5). 2. As time passes, the absorbance of unattached gingival epithelial cell to dentin sample was decreased statistically significant(p<0.05). 3. There was no statistically significant difference among the TC-HCl group(p>0.05) We concluded that there was similar effect on gingival epithelial cell attachment between TC-HCl conditioning on root surface and only scaling and root planing treatment

• 설비공학논문집
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• 제16권11호
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• pp.1051-1059
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• 2004

Two phase thermosyphone loop for electronics cooling are designed and manufactured to test its performance under the partial load and low environment temperature conditions. The thermosyphone device has six evaporators connected parallel for the purpose of cooling six power amplifier units (PAU) independently. The heater modules for simulating PAUs are adhered with thermal pad to the evaporator plates to reduce the contact resistance. There are unbalanced distributions of liquid refrigerant in the differently heated evaporators due to the vapor pressure difference. To reduce the vapor pressure differences caused by partial heating, two evaporators are connected each other using the copper tube. The pressure regulation tube successfully reduces these unbalances and it is good candidates for a field distributed systems. Under the low environment temperature operating condition, such as $-30^{\circ}C$, there may be unexpected subcooling in condenser. It leads the very low saturation pressure, and under this condition there exists explosive boiling in evaporator. The abrupt pressure rise due to the explosive boiling inhibits the supplement of liquid refrigerant to the evaporator for continuous cooling. Finally the cooling cycle will be broken. For the normal circulation of refrigerant there may be an optimum cooling air flow rate in condenser to adjust the given heat load.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2009년도 하계학술대회 논문집
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• pp.56-56
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• 2009

반도체 device가 점점 고집적화, 다층화 되면서 막질의 평탄화를 위한 CMP (chemical mechanical planarization) 공정은 반도체 제작 공정에서 필수 요건이 되었다. 특히 pad conditioning은 CMP 공정 중, 막질의 제거율과 균일도를 유지시키기 위한 중요한 공정이다. 하지만, conditioner를 장시간 사용할 경우 slurry residue와 같은 잔류 오염물질들이 conditioner의 표면의 오염을 유발할 수 있고 이로 인해 conditioner의 수명이 단축되거나 웨이퍼 표면에 결함을 유발할 수도 있다. 본 연구에서는 이를 방지하기 위해 vapor SAM을 이용하여 Ni conditioner 표면에 소수성 박막을 증착하여 오염여부를 평가해 보았다. 먼저, Ni wafer를 이용하여 증착 온도와 압력에 따라 소수성 박막을 증착하여 표면특성을 평가해 보았다. 증착전과 후에 Ni wafer 표면의 접촉각은 contact angle analyzer (Phoenix 400, SEO, Korea)를 이용하여 측정하였다. 박막 표면 형상과 거칠기는 AFM (XE-100, PSIA, Korea)를 이용하여 평가되었고 묘면 성분 분석을 위해 FT-IR (Nicolet 6700, Thermo Scientific, USA)이 사용되었다. SEM (S-4800, Hitach, Japan)은 박막 증착 전과 후의 conditioner를 이용하여 실제 conditioning후 conditioner 표면의 particle 오염정도를 관찰하기 위해 사용되었다. 또한, conditioner 표면에 실제 오염되어있는 particle 개수를 평가하기 위해 particle size analyzer (Accusizer 780A, Particle Sizing Systems Co., USA)을 사용하였다. 본 실험을 통해 최적 증착 조건을 확립하였으며 실제 conditioner 표면에 소수성 박막을 증착 후 $100^{\circ}$ 이상의 높은 contact angle을 확인할 수 있었다. 또한, 소수성 박막이 증착된 conditioner의 경우 실제 conditioning후 표면 particle 오염이 현저히 감소되었음을 확인할 수 있었다.