• Korean Journal of Materials Research
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• v.12 no.6
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• pp.470-475
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• 2002

The effects of the conditions of the collector formation on electrical characteristics of the packaged SiGe hetero-junction bipolar transistors (HBT) were investigated. While the DC characteristics of SiGe HBTs such as IV characteristic, forward current gain, Early voltage, and breakdown voltage were hardly changed after packaging, the AC characteristics such as $f_{\tau}\; and\; f_{max}$ were degraded severely. With the rise of the collector concentration, the break-down voltage decreased but the $f_{\tau}$ increased. Additionally, $\beta$ and $f_{\tau}$ values were kept high in the range of elevated collector current due to the increase of the critical current density for the onset of the Kirk effect. The devices As implanted before the collector deposition showed lower breakdown voltage and higher $f_{\tau}$ than the others, which seems to be originated from the As up-diffusion resulting in the thinner collector.

• Journal of the Microelectronics and Packaging Society
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• v.20 no.4
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• pp.47-52
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• 2013

Gold wire has long been used as a proven method of connecting a silicon die to a substrate in wide variety of package types, delivering high yield and productivity. However, with the high price of gold, the semiconductor packaging industry has been implementing an alternate wire material. These materials may include silver (Ag) or copper (Cu) alloys as an alternative to save material cost and maintain electrical performance. This paper will analyze and compare the electrical characteristics of several wire types. For the study, typical 0.6 mil, 0.8 mil and 1.0 mil diameter wires were selected from various alloy types (2N gold, Palladium (Pd) coated/doped copper, 88% and 96% silver) as well as respective pure metallic wires for comparison. Each wire model was validated by comparing it to electromagnetic simulation results and measurement data. Measurements from the implemented test boards were done using a vector network analyzer (VNA) and probe station setup. The test board layout consisted of three parts: 1. Analysis of the diameter, length and material characteristic of each wire; 2. Comparison between a microstrip line and the wire to microstrip line transition; and 3. Analysis of the wire's cross-talk. These areas will be discussed in detail along with all the extracted results from each type the wire.

• Journal of the Microelectronics and Packaging Society
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• v.23 no.4
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• pp.57-61
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• 2016

Thick film sealing glass paste is required for cell packaging of NaS based battery for energy storage system, to join the beta-alumina electrolyte tube and the alpha-alumina battery cell cap components. This paper presents the effect of the particle sizes of seal glass powder and the sealing temperatures on the microstructure of the glass sealants was investigated. It was found that the larger in the particle size of seal glass powder, the smaller the pore volume and the number of pores in a unit area. Also, the number of pores decreased with increasing the sealing temperatures while the pore size was increased. This result enables the control of porosity, pore distribution and number of pores in a microstructure of glass sealing component by proper selection of glass powders particle size and sealing temperature.

• Korean Journal of Materials Research
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• v.9 no.5
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• pp.509-514
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• 1999

Interest in the integrated capacitors, which make it possible to reduce the size of and to obtain improved electrical performance of an electronic system, is expanding. In this study, $Ta_2$O\ulcorner thin film capacitors for MCM integrated capacitors were fabricated on a Upilex-S polymer film by DC magnetron reactive sputtering and the effects of low temperature annealing at various atmospheres and substrate surface morphology on the capacitor characteristics were discussed. The low temperature($150^{\circ}C$) annealing produced improved capacitor yield irrespective of the annealing at mosphere. But the leakage current of the $O_2$-annealed film was larger than that of any other films. This is presumably mosphere. But the leakage current of the $O_2$-annealed film was larger than that of any other films. This is presumably due to the change of the $Ta_2$O\ulcorner film surface by oxygen, which was explained by conduction mechanism study. Leakage current and breakdown field strength of the capacitors fabricated on the Upilex-S film were 7.27$\times$10\ulcornerA/$\textrm{cm}^2$ and 1.0 MV/cm respectively. These capacitor characteristics were inferior to those of the capacitors fabricated on the Si substrate but enough to be used for decoupling capacitors in multilayer package. Roughness Analysis of each layer by AFM demonstrated that the properties of the capacitors fabricated on the polymer film were affected by the surface morphology of the substrate. This substrate effect could be classified into two factors. One is the surface morphology of the polymer film and the other is the surface morphology of the metal bottom electrode determined by the deposition process. Therefore, the control of the two factors is important to obtain improved electrical of capacitors deposited on a polymer film.

• Korean Journal of Materials Research
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• v.9 no.11
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• pp.1095-1101
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• 1999

Electroless Ni plating is applied to form bumps and UBM layer for flip chip interconnection. Characteristics of electroless Ni are also investigated. Zincate pretreatment is analyzed and plated layer characteristics are investigated according to variables like temperature, pH and heat treatment. Based on these observations, characteristics dependence to each variables and optimum electroless Ni plating conditions for flip-chip interconnection are suggested. Electroless Ni has 10wt% P, $60\mu\Omega$-cm resistivity, 500HV hardness and amorphous structure. It changes crystallized structure and hardness increases after heat treatment After interconnection of electroless Ni bumps by ACF flip chip method, we show their advantages and possibility in microelectronic package applications.

• Bulletin of the Korean Chemical Society
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• v.31 no.4
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• pp.881-886
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• 2010

A novel Schiff base N-(2,4-dinitro-phenyl)-N'-(1-phenyl-ethylidene)-hydrazine has been synthesized and structurally characterized by X-ray single crystal diffraction, elemental analysis, IR spectra and UV-vis spectrum. The crystal belongs to monoclinic with space group P21/n. The molecules are connected via intermolecular O-$H{\cdots}O$ hydrogen bonds into 1D infinite chains. The crystal structure is consolidated by the intramolecular N-$H{\cdots}O$ hydrogen bonds. weak intermolecular C-$H{\cdots}O$ hydrogen bonds link the molecules into intriguing 3D framework. Furthermore, Density functional theory (DFT) calculations of the structure, stabilities, orbital energies, composition characteristics of some frontier molecular orbitals and Mulliken charge distributions of the title compound were performed by means of Gaussian 03W package and taking B3LYP/6-31G(d) basis set. The time-dependent DFT calculations have been employed to calculate the electronic spectrum of the title compound, and the UV-vis spectra has been discussed on this basis. The results show that DFT method at B3LYP/6-31G(d) level can well reproduce the structure of the title compound.

• Journal of Bio-Environment Control
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• v.24 no.2
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• pp.79-84
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• 2015

This study was carried out in order to develop an economical and convenient way to improve storability of sweet persimmon 'Fuyu'. Natural porous materials (bamboo active carbon, chaff charcoal, and Ge-lite) pouching bags were enveloped in the conventional LDPE (low density polyethylene) package during room temperature and low temperature storage. The changes of soluble solids content, flesh firmness, flavor, decay, and softening of sweet persimmon were investigated in the 1- or 2-week intervals. The LDPE packaging with bamboo active carbon treatment was confirmed to maintain longer storability and higher quality than the LDPE packaging only. This method is expected to be applied to both of conventional and organic farming as an economical and convenient way to improve storability on long term storage and during distribution.

• Journal of the Microelectronics and Packaging Society
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• v.26 no.4
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• pp.55-62
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• 2019

Stiffness-gradient stretchable electronic packages of the soft PDMS/hard PDMS/FPCB structure were processed using the polydimethylsiloxane (PDMS) as the base substrate and the more stiff flexible printed circuit board (FPCB) as the island substrate. The elastic characteristics of the stretchable packages were estimated and their long-term reliabilities on stretching cycles and bending cycles were characterized. With 0.28 MPa, 1.74 MPa, and 1.85 GPa as the elastic moduli of the soft PDMS, hard PDMS, and FPCB, respectively, the effective elastic modulus of the soft PDMS/hard PDMS/FPCB package was estimated as 0.6 MPa. The resistance of the stretchable packages varied for 2.8~4.3% with stretching cycles ranging at 0~0.3 strain up to 15,000 cycles and for 0.9~1.5% with 15,000 bending cycles at a bending radius of 25 mm.

• Journal of the Microelectronics and Packaging Society
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• v.26 no.4
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• pp.47-53
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• 2019

Stiffness-gradient stretchable electronic packages of the soft PDMS/hard PDMS/PTFE structure were processed using the polydimethylsiloxane (PDMS) as the base substrate and the more stiff polytetrafluoroethylene (PTFE) as the island substrate, and their stretchable deformation-resistance characteristics were characterized. The flip-chip joints, formed by bonding the chip bumps of 50 ㎛-diameter onto the PDMS/PTFE substrate pads, exhibited an average contact resistance of 96 mΩ. When the stretchable package of the soft PDMS/hard PDMS/PTFE structure was deformed to 30% elongation, the strain on the PTFE was restrained to 1%, resulting in a negligible resistance increase of 1% in the daisy-chain circuit formed on the PTFE island substrate. The circuit resistance increased for 1.7% after 2,500 cycles of 0~30% stretchable deformation.

• Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
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• v.28 no.7
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• pp.1-12
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• 2014

This paper is proposed to design the new heat-sink apparatus for improving the heat transfer characteristics in the power LED chip, and results of the operation characteristics were discussed. The core design is that the soldering through-hole on the FR-4 PCB board is formed to the effective heat transfer. That is directly filled with Ag-nano materials, which shows the high thermal conductivity. The heat transfer medium consisting of Ag-nano materials is classified into two structures. Mediums are called as the heat slug and the multi-pin in this work. The heat of the high temperature generated from the LED chip was directly transferred to the heat slug of the one large size. And the accumulated heat from the heat slug was quickly dissipated by the medium of the multi-pin, which is the same body with the heat slug. This multi-pin was designed for the multi-dissipation of heat by increasing the surface areas with a little pins. Subsequently, the speed of the heat transfer with this new heat-sink apparatus is three times faster than the conventional heat-sink. Therefore, the efficiency of the illuminating light will be improved by adapting this new heat-sink apparatus in the large area's LED.