Fabrication and Characteristics of Electroless Ni Bump for Flip Chip Interconnection

Flip Chip 접속을 위한 무전해 니켈 범프의 형성 및 특성 연구

  • Jeon, Yeong-Du (Department of Material Science and Technology, Korea Advanced Institute of Science and Technology) ;
  • Im, Yeong-Jin (Department of Material Science and Technology, Korea Advanced Institute of Science and Technology) ;
  • Baek, Gyeong-Ok (Department of Material Science and Technology, Korea Advanced Institute of Science and Technology)
  • 전영두 (한국과학기술원 재료공학과) ;
  • 임영진 (한국과학기술원 재료공학과) ;
  • 백경옥 (한국과학기술원 재료공학과)
  • Published : 1999.11.01

Abstract

Electroless Ni plating is applied to form bumps and UBM layer for flip chip interconnection. Characteristics of electroless Ni are also investigated. Zincate pretreatment is analyzed and plated layer characteristics are investigated according to variables like temperature, pH and heat treatment. Based on these observations, characteristics dependence to each variables and optimum electroless Ni plating conditions for flip-chip interconnection are suggested. Electroless Ni has 10wt% P, $60\mu\Omega$-cm resistivity, 500HV hardness and amorphous structure. It changes crystallized structure and hardness increases after heat treatment After interconnection of electroless Ni bumps by ACF flip chip method, we show their advantages and possibility in microelectronic package applications.

무전해 니켈 도금을 이용하여 플립칩 공정에 응용하기 위한 범프와 UBM층을 형성하고 특성을 조사하였다. 도금전 zincate 처리를 해석하고 도금 변수인 온도, pH 등에 따른 도금층의 특성 변화, 공정 후의 열처리 효과들을 관찰하였다. 이를 통해 각 변수들이 도금층의 특성에 미치는 영향과 전자패키지 응용시 요구되는 무전해 니켈 도금 조건을 제시하였다. 도금직후의 니켈은 P가 10wt% 포함되며, $60\mu\Omega$-cm의 비저항, 500HV의 경도의 비정질 결정구조를 갖으며 열처리후 결정질 변태와 동시에 경도가 증가한다. 무전해 범프를 실제 테스트 칩에 형성한 후, ACF 플립칩 접속하여 무전해 니켈 범프의 장점과 미세 전자 패키징응용의 가능성을 확인하였다.

Keywords

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