• Journal of the Microelectronics and Packaging Society
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• v.19 no.4
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• pp.79-83
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• 2012

LTCC (Low temperature co-fired ceramic) package have been paid much attention due its good reliability, miniaturization, and application of silver paste with complex wiring and printing. Therefore, LTCC package has been expected to replace vulnerable plastic package in the field of high power LED device. Currently, LTCC ceramic package is mainly made up of aluminum oxide powder. In this study, zinc oxide powder is added or replaced for the fabrication of LTCC ceramic body. By adding small amount of ZnO, thermal conductivity of the LTCC ceramic body could be remarkably increased by 25% leading to the extension of LED life time. The LTCC package structure with composition including ZnO has an increased thermal flux by 56% as a result of ANSYS simulation. Actually, the fabricated LED package with the addition of ZnO exhibits a decreased thermal resistivity by 14.9%.

• Korean Journal of Materials Research
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• v.19 no.5
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• pp.288-292
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• 2009

This article shows various factors that influence the thermal-cycling reliability of semiconductor devices utilizing the lead-on-chip (LOC) die attach technique. This work details how the modification of LOC package design as well as the back-grinding and dicing process of semiconductor wafers affect passivation reliability. This work shows that the design of an adhesion tape rather than a plastic package body can play a more important role in determining the passivation reliability. This is due to the fact that the thermal-expansion coefficient of the tape is larger than that of the plastic package body. Present tests also indicate that the ceramic fillers embedded in the plastic package body for mechanical strengthening are not helpful for the improvement of the passivation reliability. Even though the fillers can reduce the thermal-expansion of the plastic package body, microscopic examinations show that they can cause direct damage to the passivation layer. Furthermore, experimental results also illustrate that sawing-induced chipping resulting from the separation of a semiconductor wafer into individual devices might develop into passivation cracks during thermal-cycling. Thus, the proper design of the adhesion tape and the prevention of the sawing-induced chipping should be considered to enhance the passivation reliability in the semiconductor devices using the LOC die attach technique.

• Journal of the Microelectronics and Packaging Society
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• v.23 no.3
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• pp.43-49
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• 2016

Reliability characteristics of thin package-on-packages were evaluated using T/H (temperature/humidity) test at $85^{\circ}C/85%$ for 500 hours, TC (temperature cycling) test at $-40{\sim}100^{\circ}C$ for 1,000 cycles, and HTS (high temperature storage) test at $155^{\circ}C$ for 1,000 hours. The average resistance of the solder-bump circuitry between the top and bottom packages of 24 package-on-package (PoP) samples, which were processed using polyimide thermal tape, was $0.56{\pm}0.05{\Omega}$ and quite similar for all 24 samples. Open failure of solder joints did not occur after T/H test for 500 hours, TC test for 1,000 cycles, and HTS test for 1,000 hours, respectively.

• Proceedings of the KSME Conference
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• 2001.06a
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• pp.286-291
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• 2001

Applications of bonded dissimilar materials such as IC package, ceramic/metal and resin/metal bonded joints, are very increasing in various industry fields. It is very important to analyze the thermal stress and stress singularity at interface edges in bonded joints of dissimilar materials. In orer to understand the package crack emanating from the edge of Die pad and Resin, fracture mechanics of bonded dissimilar materials and material properties are obtained. In this paper, the thermal stress and its singularity index for the IC package were analyzed using 2-dimensional elastic boundary element method. Crack propagation angle and path by thermal stress were numerically simulated with boundary element method.

• Korean Journal of Metals and Materials
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• v.46 no.5
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• pp.310-314
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• 2008

Electromigration test of flip chip solder bump is performed at $140^{\circ}C$ C and $4.6{\times}10^4A/cm^2$ conditions in order to compare electromigration with thermomigration behaviors by using electroplated Sn-3.5Ag solder bump with Cu under-bump-metallurgy. As a result of measuring resistance with stressing time, failure mechanism of solder bump was evaluated to have four steps by the fail time. Discrete steps of resistance change during electromigration test are directly compared with microstructural evolution of cross-sectioned solder bump at each step. Thermal gradient in solder bump is very high and the contribution of thermomigration to atomic flux is comparable with pure electromigration effect.

• Journal of the Microelectronics and Packaging Society
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• v.21 no.2
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• pp.65-70
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• 2014

Warpage of top packages to form thin package-on-packages was measured with progress of their process steps such as PCB substrate itself, chip bonding, and epoxy molding. The $100{\mu}m$-thick PCB substrate exhibited a warpage of $136{\sim}214{\mu}m$. The specimen formed by mounting a $40{\mu}m$-thick Si chip to such a PCB using a die attach film exhibited the warpage of $89{\sim}194{\mu}m$, which was similar to that of the PCB itself. On the other hand, the specimen fabricated by flip chip bonding of a $40{\mu}m$-thick chip to such a PCB possessed the warpage of $-199{\sim}691{\mu}m$, which was significantly different from the warpage of the PCB. After epoxy molding, the specimens processed by die attach bonding and flip chip bonding exhibited warpages of $-79{\sim}202{\mu}m$ and $-117{\sim}159{\mu}m$, respectively.

• Proceedings of the Materials Research Society of Korea Conference
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• 2007.05a
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• pp.12.2-12.2
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• 2007

• Korean Journal of Materials Research
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• v.17 no.2
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• pp.91-95
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• 2007

Electromigration characteristics of Sn-3.5Ag flip chip solder bump were analyzed using flip chip packages which consisted of Si chip substrate and electroplated Cu under bump metallurgy. Electromigration test temperatures and current densities peformed were $140{\sim}175^{\circ}C\;and\;6{\sim}9{\times}10^4A/cm^2$ respectively. Mean time to failure of solder bump decreased as the temperature and current density increased. The activation energy and current density exponent were found to be 1.63 eV and 4.6, respectively. The activation energy and current density exponent have very high value because of high Joule heating. Evolution of Cu-Sn intermetallic compound was also investigated with respect to current density conditions.

• Journal of the Microelectronics and Packaging Society
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• v.22 no.2
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• pp.61-68
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• 2015

Warpage analysis has been performed for top and bottom packages of thin package-on-packages processed with different epoxy molding compounds (EMCs). Warpage deviation was measured for packages molded with the same EMCs and also the warpage deviations of top and bottom substrates themselves were characterized in order to identify the major factor causing the package warpage. For the top and bottom packages processed with thin substrates, the warpage deviation of the substrates was large, which made it difficult to figure out the effect of EMC properties on the package warpage. Top packages, where the molding area of $13mm{\times}13mm$ covered the most of the substrate area ($14mm{\times}14mm$), exhibited similar warpage behavior with changing the temperature. On the other hand, bottom packages, where the molding area was only $8mm{\times}8mm$, exhibited the complex warpage behavior due to simultaneous occurrence of (+) and (-) warpages on the same package. Accordingly, the bottom packages showed dissimilar temperature-warpage behavior even being processed with the same EMCs.

• ETRI Journal
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• v.39 no.6
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• pp.866-873
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• 2017

We propose a multilayered-substrate-based power semiconductor discrete device package for a low switching loss and high heat dissipation. To verify the proposed package, cost-effective, low-temperature co-fired ceramic, multilayered substrates are used. A bare die is attached to an embedded cavity of the multilayered substrate. Because the height of the pad on the top plane of the die and the signal line on the substrate are the same, the length of the bond wires can be shortened. A large number of thermal vias with a high thermal conductivity are embedded in the multilayered substrate to increase the heat dissipation rate of the package. The packaged silicon carbide Schottky barrier diode satisfies the reliability testing of a high-temperature storage life and temperature humidity bias. At $175^{\circ}C$, the forward current is 7 A at a forward voltage of 1.13 V, and the reverse leakage current is below 100 lA up to a reverse voltage of 980 V. The measured maximum reverse current ($I_{RM}$), reverse recovery time ($T_{rr}$), and reverse recovery charge ($Q_{rr}$) are 2.4 A, 16.6 ns, and 19.92 nC, respectively, at a reverse voltage of 300 V and di/dt equal to $300A/{\mu}s$.