• 제목/요약/키워드: pH threshold

검색결과 163건 처리시간 0.031초

The investigation of pH threshold value on the corrosion of steel reinforcement in concrete

  • Pu, Qi;Yao, Yan;Wang, Ling;Shi, Xingxiang;Luo, Jingjing;Xie, Yifei
    • Computers and Concrete
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    • 제19권3호
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    • pp.257-262
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    • 2017
  • The aim of this study is to investigate the pH threshold value for the corrosion of steel reinforcement in concrete. A method was designed to attain the pH value of the pore solution on the location of the steel in concrete. Then the pH values of the pore solution on the location of steel in concrete were changed by exposing the samples to the environment (CO25%, RH 40%) to accelerate carbonation with different periods. Based on this, the pH threshold value for the corrosion of steel reinforcement had been examined by the methods of half-cell potential and electrochemical impedance spectra (EIS). The results have indicated that the pH threshold value for the initial corrosion of steel reinforcement in concrete was 11.21. However, in the carbonated concrete, agreement among whether steel corrosion was initiatory determined by the detection methods mentioned above could be found.

a-Si:H TFT의 누설전류 및 문턱전압 특성 연구 (Leakage Current and Threshold Voltage Characteristics of a-Si:H TFT Depending on Process Conditions)

  • 양기정;윤도영
    • Korean Chemical Engineering Research
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    • 제48권6호
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    • pp.737-740
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    • 2010
  • 높은 누설 전류와 문턱 전압의 이동은 비정질 실리콘(a-Si:H) 트랜지스터(TFT)의 단점이다. 이러한 특성은 게이트 절연체와 활성층 박막의 막 특성, 표면 거칠기와 공정 조건에 따라 영향을 받는다. 본 연구의 목적은 누설 전류와 문턱 전압의 특성을 개선하는데 목적이 있다. 게이트 절연체의 공정 조건에 대해서는 질소를 증가한 증착 공정 조건을 적용하였고, 활성층의 공정 조건에 대해서는 산소를 증가한 공정 조건을 적용하여 전자 포획을 감소시키고 박막의 밀도를 증가시켰다. $I_{off}$$65^{\circ}C$ 조건하에서 1.01 pA에서 0.18pA로, ${\Delta}V_{th}$는 -1.89 V에서 -1.22V로 개선되었다.

Back-gated MOSFET을 이용한 pH 농도 측정센서 (pH Sensor using back-gated MOSFET)

  • 박진권;김민수;조원주
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2010년도 하계학술대회 논문집
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    • pp.199-199
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    • 2010
  • A back-gated MOSFET on silicon-on-insulator (SOI) substrate for pH sensor was investigated. We used concentrations of pH solution from 6 to 9. The fabricated back-gated MOSFET has current difference and threshold voltage shift by pH concentrations. Therefore, It can be used to simplification of conventional pH sensor.

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On Strict Stationarity of Nonlinear Time Series Models without Irreducibility or Continuity Condition

  • Lee, Oe-Sook;Kim, Kyung-Hwa
    • Journal of the Korean Data and Information Science Society
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    • 제18권1호
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    • pp.211-218
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    • 2007
  • Nonlinear ARMA model $X_n\;=\;h(X_{n-1},{\cdots},X_{n-p},e_{n-1},{\cdots},e_{n-p})+e_n$ is considered and easy-to-check sufficient condition for strict stationarity of {$X_n$} without some irreducibility or continuity assumption is given. Threshold ARMA(p, q) and momentum threshold ARMA(p, q) models are examined as special cases.

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콘크리트의 화학적 특성을 고려한 철근 부식 임계 염소이온 농도 (Chloride Threshold Value for Steel Corrosion considering Chemical Properties of Concrete)

  • 송하원;정민선;안기용;이창홍
    • 대한토목학회논문집
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    • 제29권1A호
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    • pp.75-84
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    • 2009
  • 본 연구에서는 혼합 콘크리트의 염소이온 고정화 능력, 수화물의 부식 억제 능력(Buffering capacity) 및 모르타르 내 철근 부식 측정을 통하여 콘크리트 내 철근 부식의 임계 염소이온 농도를 도출하였다. 실험 시 결합재로서 보통 포틀랜드 시멘트(OPC), 30% 플라이애시(PFA), 60% 고로슬래그 미분말(GGBS), 10% 실리카퓸(SF)를 치환한 혼합 시멘트를 사용하였다. 염소이온 고정화는 수분추출방법을 이용하여 측정하였으며, 시멘트의 부식 억제 능력은 결합재에 따른 산에 대한 저항성 측정을 통해 평가하였다. 염소이온이 함유된 모르타르 내 철근 부식은 재령 28일에 선형 분극 방법을 이용하여 측정하였다. 실험 결과, 염소이온 고정화 능력은 결합재 내의 $C_{3}A$ 함유량과 물리적 흡착에 의해 크게 영향을 받음을 알 수 있었다. 염소이온 고정화 정도는60% GGBS > 30% PFA > OPC > 10% SF 의 순으로 나타났다. pH 감소에 따른 시멘트의 부식 억제 능력은 같은 pH 값에서 결합재의 종류에 따라 다양하게 나타났다. 부식전류가 $0.1-0.2{\mu}A/cm^{2}$에 이를 때 부식이 발생한다는 가정하에, 부식에 대한 임계 염소이온 농도에 대하여 OPC는 1.03, 30% PFA는 0.65, 60% GGBS는 0.45, 10% SF는 0.98%로 각각 계산되었다. 그에 비해 임계 염소이온 농도의 새로운 표현방법으로 제시한 [$Cl^{-}$]:[$H^{+}$] 몰 농도비의 단위로 계산하였을 때, 임계 염소이온 농도는 결합재에 관계없이 0.008-0.009로 도출되었다.

Biotic ligand model과 종 민감도 분포를 이용한 토양 공극수 내 Cu의 생태독성학적 허용농도 결정에 미치는 환경인자의 영향 (Effect of Environmental Factors on the Determination of the Ecotoxicological Threshold Concentration of Cu in Soil Pore Water through Biotic Ligand Model and Species Sensitivity Distribution)

  • 유기현;안진성;정부윤;남경필
    • 한국지하수토양환경학회지:지하수토양환경
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    • 제22권1호
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    • pp.49-58
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    • 2017
  • Biotic ligand model (BLM) and species sensitivity distribution (SSD) were used to determine the site-specific Cu threshold concentration (5% hazardous concentration; HC5) in soil pore water. Model parameters for Cu-BLM were collected for six plants, one collembola, and two earthworms from published literatures. Half maximal effective concentration ($EC_{50}\{Cu^{2+}\}$), expressed as $Cu^{2+}$ activity, was calculated based on activities of major cations and the collected Cu-BLM parameters. The $EC_{50}\{Cu^{2+}\}$ varied from 2 nM to $251{\mu}M$ according to the variation in environmental factors of soil pore water (pH, major cation/anion concentrations) and the type of species. Hazardous activity for 5% (HA5) and HC5 calculated from SSD varied from 0.076 to $0.4{\mu}g/L$ and 0.4 to $83.4{\mu}g/L$, respectively. HA5 and HC5 significantly decreased with the increase in pH in the region with pH less than 7 due to the decrease in competition with $H^+$ and $Cu^{2+}$. In the region with pH more than 7, HC5 increased with the increase in pH due to the formation of complexes of Cu with inorganic ligands. In the presence of dissolved organic carbon (DOC), Cu and DOC form a complex, which decreases $Cu^{2+}$ activity in soil pore water, resulting in up to 292-fold increase in HC5 from 0.48 to $140{\mu}g/L$.

DZDC Coefficient Distributions for P-Frames in H.264/AVC

  • Wu, Wei;Song, Bin
    • ETRI Journal
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    • 제33권5호
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    • pp.814-817
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    • 2011
  • In this letter, the distributions of direct current (DC) coefficients for P-frames in H.264/AVC are analyzed, and the distortion model of the Gaussian source under the quantization of the dead-zone plus-uniform threshold quantization with uniform reconstruction quantizer is derived. Experimental results show that the DC coefficients of P-frames are best approximated by the Laplacian distribution and the Gaussian distribution at small quantization step sizes and at large quantization step sizes, respectively.

A genome-wide association study (GWAS) for pH value in the meat of Berkshire pigs

  • Park, Jun;Lee, Sang-Min;Park, Ja-Yeon;Na, Chong-Sam
    • Journal of Animal Science and Technology
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    • 제63권1호
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    • pp.25-35
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    • 2021
  • The purpose of this study is to estimate the single nucleotide polymorphism (SNP) effect for pH values affecting Berkshire meat quality. A total of 39,603 SNPs from 1,978 heads after quality control and 882 pH values were used estimate SNP effect by single step genomic best linear unbiased prediction (ssGBLUP) method. The average physical distance between adjacent SNP pairs was 61.7kbp and the number and proportion of SNPs whose minor allele frequency was below 10% were 9,573 and 24.2%, respectively. The average of observed heterozygosity and polymorphic information content was 0.32 ± 0.16 and 0.26 ± 0.11, respectively and the estimate for average linkage disequilibrium was 0.40. The heritability of pH45m and pH24h were 0.10 and 0.15 respectively. SNPs with an absolute value more than 4 standard deviations from the mean were selected as threshold markers, among the selected SNPs, protein-coding genes of pH45m and pH24h were detected in 6 and 4 SNPs, respectively. The distribution of coding genes were detected at pH45m and were detected at pH24h.

As-Ge-Te계 박막의 스위칭 특성 (Switching Characteristics of As-Ge-Te Thin Film)

  • 천석표;이현용;박태성;정홍배;이영종
    • 대한전기학회:학술대회논문집
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    • 대한전기학회 1994년도 추계학술대회 논문집 학회본부
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    • pp.199-201
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    • 1994
  • The switching characteristics of $As_{10}Ge_{15}Te_{75}$ thin film were investigated under dc bias. It was found that the threshold voltage depends on thickness, electrode distance, annealing time and temperature, respectively. The threshold voltage is increased as the thickness and the electrode distance is increased, while the threshold voltage is decreased in proportion to the increased annealing time and temperature.

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800 V급 4H-SiC DMOSFET 전력 소자 구조 최적화 시뮬레이션 (A Simulation Study on the Structural Optimization of a 800 V 4H-SiC Power DMOSFET)

  • 최창용;강민석;방욱;김상철;김남균;구상모
    • 한국전기전자재료학회논문지
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    • 제22권8호
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    • pp.637-640
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    • 2009
  • In this work, we demonstrate 800 V 4H-SiC power DMOSFETs with several structural alterations to obtain a low threshold voltage ($V_{TH}$) and a high figure of merit ($V_B\;^2/R_{SP,ON}$), To optimize the device performance, we consider four design parameters; (a) the doping concentration ($N_{CSL}$) of current spreading layer (CSL) beneath the p-base region, (b) the thickness of p-base ($t_{BASE}$), (c) the doping concentration ($N_J$) and width ($W_J$) of a JFET region, (d) the doping concentration ($N_{EPI}$) and thickness ($t_{EPI}$) of epi-layer. These parameters are optimized using 2D numerical simulation and the 4H-SiC DMOSFET structure results in a threshold voltage ($V_{TH}$) below $^{\sim}$3.8 V, and high figure of merit ($V_B\;^2/R_{SP,ON}$>$^{\sim}$200 $MW/cm^2$) for a power MOSFET in $V_B\;^{\sim}$800 V range.