• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1992.11a
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• pp.123-127
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• 1992

When MOS devices is exposed to radiation, radiation effects of P-type MOS capacitor can cause modulation and/or degradation in devices characteristics and its operating life. The oxide layer is grown in $O_2$+T.C.E. and its thickness ranges from 40 to 80 nm. Irradiations on MOS capacitor were performed by Cobalt-60 gamma ray source and total dose ranges from $10^4$ to $10^8$ rads. The radiation effect on electrical conduction characteristics(I-V) in MOS capacitor was measured as a function of gate oxide thickness and total dose. From the experimental result, I-V characteristics is found to be influenced strongly by total dose in irradiated p-type MOS capacitors. The ohmic current is dependant on of total dose in irradiated P-type MOS capacitors. This results are explained using surface states at interface radiation-induced traps.

• Journal of the Korean Ceramic Society
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• v.31 no.6
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• pp.601-608
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• 1994

Aluminum oxide thin films were deposited on p-type(100) silicon substrates by electron cyclotron resonance plasma enhanced CVD(ECR-PECVD) using TMA[Al(CH3)3] and oxygen as reactant gases at 16$0^{\circ}C$ or lower temperatures. The aluminum oxide films deposited by ECR-PECVD have the amorphous structure with the refractive index of 1.62~1.64 and the O/Al ratio of 1.6~1.7. Oxygen flow rate necessary for the stable deposition of the aluminum oxide films increases as the deposition temperature increases. It was found from the OES analysis that the ECR plasma had les cooling effect by introducing the TMA reactant gas in comparison with the RF plasma. The properties of aluminum oxide films prepared by ECR-PECVD were compared with those prepared by RF-PECVD. The ECR-PECVD aluminum oxide films have the higher refractive indices, the lower contents of impurities (H and C) and the stronger wet etch resistance than those deposited by RF-PECVD.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.176.1-176.1
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• 2014

Graphene has attracted an increasing attention due to its extraordinary electronic, mechanical, and thermal properties. Especially, the two dimensional (2D) sheet of graphene with an extremely high surface to volume ratio has a great potential in the preparation of multifunctional nanomaterials, as 2D supports to host metal nanoparticles (NPs). Copper oxide is widely used in various areas as antifouling paint, p-type semiconductor, dry cell batteries, and catalysts. Although the copper oxide(II) has been well known for efficient catalyst in C-N cross-coupling reaction, copper oxide(I) has not been highlighted. In this research, CuO and Cu2O nanoparticles (NPs) dispersed on the surface of grapehene oxide (GO) have been synthesized by impregnation method and their morphological and electronic structures have been systemically investigated using TEM, XRD, and XAFS. We demonstrate that both CuO and Cu2O on graphene presents efficient catalytic performance toward C-N cross coupling reaction. The detailed structural difference between CuO and Cu2O NPs and their effect on catalytic performance are discussed.

• The Transactions of the Korean Institute of Electrical Engineers
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• v.34 no.6
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• pp.244-252
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• 1985

A model is presented to explain charging phenomena into the oxide layer when a metal-oxide-silicon(MOS) capacitor is driven by a large amplitude and high frequency ac signal sufficient to produce avalanche injection in the silicon. During avalanche, minority carriers are injected. It is assumed that some of these minority carriers attain sufficient energy to surmount the potential barrier at the interface, and then inter the oxide. Measurements of C-V curves are made for the MOS capacitor with p-type silicon substrates before and after avalanche injection. This paper studies how charging in the oxide and the interface depends on oxide properties. It is concluded that this charging effect is related to the presence of water in the oxide.

• Toxicological Research
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• v.32 no.2
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• pp.115-121
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• 2016

This study was conducted to examine the cellular regulatory mechanisms of sulfasalazine (SSZ) in rabbit articular chondrocytes treated with sodium nitroprusside (SNP). Cell phenotype was determined, and the MTT assay, Western blot analysis and immunofluorescence staining of type II collagen was performed in control, SNP-treated and SNP plus SSZ ($50{\sim}200{\mu}g/mL$) rabbit articular chondrocytes. Cellular proliferation was decreased significantly in the SNP-treated group compared with that in the control (p < 0.01). SSZ treatment clearly increased the SNP-reduced proliferation levels in a concentration-dependent manner (p < 0.01). SNP treatment induced significant dedifferentiation and inflammation compared with control chondrocytes (p < 0.01). Type II collagen expression levels increased in a concentration-dependent manner in response to SSZ treatment but were unaltered in SNP-treated chondrocytes (p < 0.05 and < 0.01, respectively). Cylooxygenase-2 (COX-2) expression increased in a concentration-dependent manner in response to SSZ treatment but was unaltered in SNP-treated chondrocytes (p < 0.05). Immunofluorescence staining showed that SSZ treatment increased type II collagen expression compared with that in SNP-treated chondrocytes. Furthermore, phosphorylated extracellular regulated kinase (pERK) expression levels were decreased significantly in the SNP-treated group compared with those in control chondrocytes (p < 0.01). Expression levels of pERK increased in a concentration-dependent manner by SSZ but were unaltered in SNP-treated chondrocytes. pp38 kinase expression levels increased in a concentration-dependent manner by SSZ but were unaltered in control chondrocytes (p < 0.01). In summary, SSZ significantly inhibited nitric oxide-induced cell death and dedifferentiation, and regulated extracellular regulated kinases 1 and 2 and p38 kinase in rabbit articular chondrocytes.

• Journal of the Korean Electrochemical Society
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• v.13 no.1
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• pp.10-18
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• 2010

Nanostructured metal oxides have been widely used in the research fields of photoelectrochemistry, photochemistry and opto-electronics. Dye-sensitized solar cell is a typical example because it is based on nanostructured $TiO_2$. Since the discovery of dye-sensitized solar cell in 1991, it has been considered as a promising photovoltaic solar cell because of low-cost, colorful and semitransparent characteristics. Unlike p-n junction type solar cell, dye-sensitized solar cell is photoelectrochemical type and is usually composed of the dye-adsorbed nanocrystalline metal oxide, the iodide/tri-iodide redox electrolyte and the Pt and/or carbon counter electrode. Among the studied issues to improve efficiency of dye-sensitized solar cell, nanoengineering technologies of metal oxide particle and film have been reviewed in terms of improving optical property, electron transport and electron life time.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.27 no.10
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• pp.642-647
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• 2014

For feasible study of opto-electrical application regarding to oxide semiconductor, we implemented the N doped ZnO growth using a atomic layer deposition technique. The p-type ZnO deposition, necessary for ZnO-based optoelectronics, has considered to be very difficulty due to sufficiently deep acceptor location and self-compensating process on doping. Various sources of N such as $N_2$, $NH_3$, NO, and $NO_2$ and deposition techniques have been used to fabricate p-type ZnO. Hall measurement showed that p-type ZnO was prepared in condition with low deposition temperature and dopant concentration. From the evaluation of photoluminescence spectroscopy, we could observe defect formation formed by N dopant. In this paper, we exhibited the electrical and optical properties of N-doped ZnO thin films grown by atomic layer deposition with $NH_3OH$ doping source.

• Journal of Magnetics
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• v.12 no.4
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• pp.144-148
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• 2007

We report on the observation of p-type conductivity and ferromagnetism in diluted magnetic semiconductor $(Zn_{0.97}Mg_{0.01}Mn_{0.02})O:P$ films grown on $SiO_2/Si$ substrates by pulsed laser deposition. The p-type conduction with hole concentration over $10^{18}cm^{-3}$ is obtained by codoping of Mg and P followed by rapid thermal annealing in an $O_2$ atmosphere. Structural and compositional analyses for the p-type $(Zn_{0.97}Mg_{0.01}Mn_{0.02})O:P$ films annealed at $800^{\circ}C$ indicates that highly c-axis oriented homogeneous films were grown without any detectable formation of secondary phases. The films were found to be transparent in the visible range. The magnetic measurements clearly revealed an enhancement of room temperature ferromagnetism by p-type doping.

• Transactions of the Korean Society of Pressure Vessels and Piping
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• v.20 no.1
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• pp.49-55
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• 2024

Stainless 630 (or 17-4PH) is a precipitation-hardening martensitic stainless steel that has excellent mechanical properties and corrosion resistance. These characteristics make the STS630 to be used as a consisting material for various components such as spider, pin, spring, and spring retainer, of the control rod drive mechanism (CRDM) in pressurized water reactors (PWRs). In general, it is well known that the oxide layer of stainless steel consists of a duplex layer, a compact inner layer of FeCr₂O₄ spinel, and a coarse-grained outer layer of Fe₃O₄ spinel in PWR primary coolant condition. However, the characteristics of the oxide layer can be sensitively influenced by various water chemistry conditions such as temperature, dissolved oxygen, dissolved hydrogen, pH, pH adjuster type, and exposure time. In this work, we investigate the corrosion properties of the STS630 as a function of coolant temperature in an NH3 alkaline solution for its boron-free application in a small modular reactor, to confirm the feasibility for usage as a boron-free SMR structural material. As a result, oxide layer of corroded STS630 is consist of double-layer oxides consisting of a Cr-rich dense inner oxide and a Fe-rich polyhedral outer particles like as that in commercial PWR primary coolant. The corrosion rate of STS630 increases with increase in test time and temperature and the corrosion rate-time model equation was developed based on experimental data. Overall, it is expected that the results in this study provides useful data for the corrosion behavior of STS630 in alkaline environments, contributing to the development of selecting suitable materials for SMRs.

• Proceedings of the IEEK Conference
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• 1998.10a
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• pp.597-600
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• 1998

When a semiconductor(pMOSFET) sensor is exposed to ionizing radiation, electrons/holes are generated in its oxide layer. By the phenomenon of hole traps in oxide layer during their move, the characteristics of semiconductor is changed. This paper describes the output characteristic changes of two kind of pMOSFET(domestic, japan) after C0-60 ${\gamma}$-irradiation on them for their application as radiation accumulated dose monitoring sensors. We found the threshold voltage shifts (VT) of pMOSFETs in proportion to irradiated radiation dose and their linear properties. These results make us confirm that we will be able to develop good accumulated radiation dose monitoring sensors.