• JSTS:Journal of Semiconductor Technology and Science
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• v.9 no.2
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• pp.91-97
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• 2009

The performance of GaInP/GaAs tandem solar cells with AlInP growth temperatures of 680$^{\circ}C$ and 700 $^{\circ}C$ on n-type GaAs (100) substrate with 2$^{\circ}$ and 6$^{\circ}$ tilt angles has been investigated. The series resistance and open circuit voltage of the fabricated tandem solar cells are affected by the substrate tilt angles and the growth temperatures of the window layer when zinc is doped in the tunnel diode. With carbon doping as a p-type doping source in the tunnel diode and the effort of current matching between top and bottom cells, GaInP/GaAs tandem solar cell has been exhibited 25.58% efficiency.

• Journal of the Korean Vacuum Society
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• v.19 no.5
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• pp.391-396
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• 2010

The pn junction for solar cell was prepared on p-type Si wafer by the furnace using the $POCl_3$ and oxygen mixed precursor to research the characteristic of interface at pn junction. The sheet resistance was decreased in accordance with the increasing the diffusion process time for n-type doping on p-type Si wafer. The electron affinity at the interface in the pn junction was decreased with increasing the amount of n-type doping and the sheet resistance also decreased. Consequently, the drift current due to the generation of EHP increased because of low potential barrier. The efficiency and fill factor were increased at the solar cell with increasing the diffusion process time.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2010.06a
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• pp.366-366
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• 2010

Simulation Program (AFORS-HET 2.4.1) was used, include the basic structure of crystalline silicon thin film as above, below Intrinsic a-Si:H films bonded symmetrical structure (Symmetrical structure) were used. Efficiency with variation of the concentration was grown by the a-Si p-type with increasing concentrations of Na, efficiency with increasing a-Si n-type of Nd Concentrations was not changed, was decreased rapidly when concentrations were decreased. Efficiency was increased when c-Si n-type of Nd concentration was increased, otherwise efficiency was decreased when concentration was decreased.

• Journal of the Korean Vacuum Society
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• v.22 no.5
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• pp.238-244
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• 2013

Doping process using laser is an important process in fabrication of solar cell for heat treatment. However, the process of using the furnace is difficult to form a selective emitter doping region. The case of using a selective emitter laser doping is required an expensive laser equipment and induce the wafer's structure damage due to high temperature. This study, we fabricated a new costly plasma source. Through this, we research the selective emitter doping. We fabricated that the atmospheric pressure plasma jet injected Ar gas is inputted a low frequency (a few tens kHz). We used shallow doping wafers existing PSG (Phosphorus Silicate Glass) on the shallow doping CZ P-type wafer. Atmospheric plasma treatment time was 15 s and 30 s, and current for making the plasma is 40 mA and 70 mA. We investigated a doping profile by using SIMS (Secondary Ion Mass Spectroscopy) and we grasp the sheet resistance of electrical character by using doping profile. As result of experiment, prolonged doping process time and highly plasma current occur a deeper doping depth, moreover improve sheet resistance. We grasped the wafer's surface damage after atmospheric pressure plasma doping by using SEM (Scanning Electron Microscopy). We check that wafer's surface is not changed after plasma doping and atmospheric pressure doping width is broaden by increase of plasma treatment time and current.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.7 no.1
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• pp.143-150
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• 1997

The electrical properties of polysilicon thin films implanted with $B_2H_6$ diluted in $H_2$ as dopant source using ion mass doping technique and the effect of radiation damage on the dopant activation behavior were investigated. Comparing the SIMS profiles of boron in polysilicon films with that obtained from computer simulation using TRIM92 the most probable ion species were $B_2H_x\;^+$(x＝1, 2, 3‥‥) type molecular ions. As a result of the Implantation of energetic massive ions, a continuous amorphized layer was created in polysilicon films where the fraction of amorphized layer varied with doping time. This amorphization comes from the fact that mass separation of implanting species is not employed in this ion mass doping technique. In the dopant activation behavior, reverse annealing phenomenon appeared in the intermediate annealing temperature range for a severely damaged specimen. The experimental result showed that the off-state current of the p-channel polysilicon thin film transistor is dependent on the degree of radiation damage.

• Korean Chemical Engineering Research
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• v.55 no.2
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• pp.253-257
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• 2017

Graphene is a monolayer carbon material which consists of $sp^2$ bonding between carbon atoms. Its excellent intrinsic properties allow graphene to be used in various research fields. Many researchers believe that graphene is suitable for electronic device materials due to its high electrical conductivity and carrier mobility. Through chemical doping, n- or p-type graphene can be obtained, and consequently graphene-based devices which have more comparable structure to common semiconductor-based devices can be fabricated. In our research, we introduced the dielectrophoresis process to the chemical doping step in order to improve the effect of chemical doping of graphene selectively. Under 10 kHz and $5V_{pp}$ (peak-to-peak voltage), doping was conducted and the Au nanoparticles were effectively formed, as well as aligned along the edges of graphene. Effects of the selective chemical doping on graphene were investigated through Raman spectroscopy and the change of its electrical properties were explored. We proposed the method to enhance the doping effect in local region of a graphene layer.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.11a
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• pp.50-50
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• 2009

In this paper, the plasma doping is performed on p-type wafers using $PH_3$ gas(10 %) diluted with He gas(90 %). The wafer is placed in the plasma generated with 200 W and a negative DC bias (1 kV) is applied to the substrate for 60 sec under no substrate heating. the flow rate of the diluted $PH_3$ gas and the process pressure are 100 sccm and 10 mTorr, respectively. In order to diffuse and activate the dopant, annealing process such as rapid thermal annealing (RTA) is performed. RTA process is performed either in $N_2$, $O_2$ or $O_2+N_2$ ambient at $900{\sim}950^{\circ}C$ for 10 sec. The sheet resistance is measured using four point probe. The shallow n+/p doping profiles are investigated using secondary ion mass spectromtry (SIMS). The analysis of crystalline defect is also done using transmission electron microscopy (TEM) and double crystal X-ray diffraction (DXRD).

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.23 no.6
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• pp.487-490
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• 2010

This paper describes the elecrtical and optical characteristics of $N_2$ doped porous 3C-SiC films. Polycrystalline 3C-SiC thin films are anodized by $HF+C_2H_5OH$ solution with UV-LED exposure. The growth of in-situ doped 3C-SiC thin films on p-type Si (100) wafers is carried out by using APCVD (atmospheric pressure chemical vapor deposition) with a single-precursor of HMDS (hexamethyildisilane: $Si_2(CH_3)_6)$. 0 ~ 40 sccm $N_2$ was used for doping. After the growth of doped 3C-SiC, porous 3C-SiC is formed by anodization with $7.1\;mA/cm^2$ current density for anodization time of 60 sec. The average pore diameter is about 30 nm, and etched area is increased with $N_2$ doping rate. These results are attributed to the decrease of crystallinity by $N_2$ doping. Mobility is dramatically decreased in porous 3C-SiC. The band gaps of polycrystalline 3C-SiC films and doped porous 3C-SiC are 2.5 eV and 2.7 eV, respectively.

• The Transactions of the Korean Institute of Electrical Engineers
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• v.35 no.2
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• pp.62-66
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• 1986

Ion beam etching of silicon with N2 and Ar gas has been found to cause the band edge to bend downward near the surface in p-type silicon. Rectifying, rather than ohmic contacts are obtained on the structures formed by evaporation of gold and titanium onto ion-bean-etched p-type silicon. The 1/C2 versus V relationship measured at 1MHz is found to be nonlinear for small voltages indicating alteration of the effective doping colse to the silicon surface.

• Journal of the Korean Ceramic Society
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• v.37 no.5
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• pp.432-437
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• 2000

Thermoelectric properties of p-type SiGe alloys prepared by a RF inductive furnace were investigated. Non-doped Si80Ge20 alloys were fabricated by control of the quantity of volatile Ge. The carrier of p-type SiGe alloy was controlled by B-doping. B doped p-type SiGe alloys were synthesized by melting the mixture of Ge and Si containing B. The effects of sintering/annealing conditions and compaction pressure on thermoelectric properties (electrical conductivity and Seebeck coefficient) were investigated. For nondoped SiGe alloys, electrical conductivity increased with increasing temperatures and Seebeck coefficient was measured negative showing a typical n-type semiconductivity. On the other hand, B-doped SiGe alloys exhibited positive Seebeck coefficient and their electrical conductivity decreased with increasing temperatures. Thermoelectric properties were more sensitive to compaction pressure than annealing time. The highest power factor obtained in this work was 8.89${\times}$10-6J/cm$.$K2$.$s for 1 at% B-doped SiGe alloy.