한국진공학회지 (Journal of the Korean Vacuum Society)

한국진공학회 (The Korean Vacuum Society)
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POCl3를 사용한 pn접합 소자에 관한 연구

Study on the pn Junction Device Using the POCl3 Precursor

  • Oh, Teresa (School of Electronic and Information Engineering, Cheongj University)
  • 투고 : 2010.05.31
  • 심사 : 2010.09.13
  • 발행 : 2010.09.30
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초록

실리콘 태양전지의 pn 접합 계면특성을 조사하기 위해서 p형 실리콘 기판 위에 전기로를 이용한 $POCl_3$ 공정을 통하여 n형의 불순물을 주입하여 pn 접합을 만들었다. n형 불순물의 확산되어 들어가는 공정시간이 길고 공정온도가 높을수록 면저항은 줄어들었다. n형 불순물의 주입이 많아질수록 pn 접합 계면에서의 전자친화도가 줄어들면서 면저항은 감소되었다. 면저항이 줄어든 이유는 pn 접합계면에서 전자홀쌍이 생성되면서 이동길이가 길어지고 재결합률이 감소하였기 때문이다. n형의 불순물 확산공정시간이 긴 태양전지 셀에서 F.F. 계수가 높게 나타났으며, 효율도 높게 나타났다.

The pn junction for solar cell was prepared on p-type Si wafer by the furnace using the $POCl_3$ and oxygen mixed precursor to research the characteristic of interface at pn junction. The sheet resistance was decreased in accordance with the increasing the diffusion process time for n-type doping on p-type Si wafer. The electron affinity at the interface in the pn junction was decreased with increasing the amount of n-type doping and the sheet resistance also decreased. Consequently, the drift current due to the generation of EHP increased because of low potential barrier. The efficiency and fill factor were increased at the solar cell with increasing the diffusion process time.

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참고문헌

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피인용 문헌

  1. Correlation between Reverse Voltage Characteristics and Bypass Diode Operation with Different Shading Conditions for c-Si Photovoltaic Module Package vol.15, pp.5, 2015, https://doi.org/10.5573/JSTS.2015.15.5.577
  2. Solar Module with a Glass Surface of AG (Anti-Glare) Structure vol.20, pp.3, 2011, https://doi.org/10.5757/JKVS.2011.20.3.233