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http://dx.doi.org/10.5757/JKVS.2010.19.5.391

Study on the pn Junction Device Using the POCl3 Precursor  

Oh, Teresa (School of Electronic and Information Engineering, Cheongj University)
Publication Information
Journal of the Korean Vacuum Society / v.19, no.5, 2010 , pp. 391-396 More about this Journal
Abstract
The pn junction for solar cell was prepared on p-type Si wafer by the furnace using the $POCl_3$ and oxygen mixed precursor to research the characteristic of interface at pn junction. The sheet resistance was decreased in accordance with the increasing the diffusion process time for n-type doping on p-type Si wafer. The electron affinity at the interface in the pn junction was decreased with increasing the amount of n-type doping and the sheet resistance also decreased. Consequently, the drift current due to the generation of EHP increased because of low potential barrier. The efficiency and fill factor were increased at the solar cell with increasing the diffusion process time.
Keywords
Diffusion; pn junction; Electron affinity; Potential barrier; Efficiency; Solar cell;
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Times Cited By KSCI : 5  (Citation Analysis)
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