• 한국진공학회:학술대회논문집
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• 한국진공학회 2009년도 제38회 동계학술대회 초록집
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• pp.135-135
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• 2010

In Mn-Ge equilibrium phase diagram, many Mn-Ge intermetallic phases can be formed with difference structures and magnetic properties. The MnGe has the cubic structure and antiferromagnetic(AFM) with Neel temperature of 197 K. The calculation predicted that the $MnGe_2$ with $Al_2Cu$-type is hard to separate between the paramagnetic(PM) states and the AFM states because this compound displays PM and AFM configuration swith similar energy. Mn-doped Ge showed the FM with Currie temperature of 285 K for bulk samples and 116 K for thin films. In addition, the $Mn_5Ge_3$ compound has hexagonal structure and FM with Curie temperature around 296K. The $Mn_{11}Ge_8$ compound has the orthorhombic structure and Tc is low at 274 K and spin flopping transition is near to 140 K. While the bulk $Mn_3Ge_2$ exhibited tetragonal structure ($a=5.745{\AA}$;$c=13.89{\AA}$) with the FM near to 300K and AFM below 150K. However, amorphous $Mn_3Ge_2$ ($a-Mn_3Ge_2$) was reported to show spin glass behavior with spin-glass transition temperature (Tg) of 53 K. In addition, the transition of crystalline $Mn_3Ge_2$ shifts under high pressure. At the atmospheric pressure, $Mn_3Ge_2$ undergoes the magnetic phase transition from AFM to FM at 158 K. The pressure dependence of the phase transition in $Mn_3Ge_2$ has been determined up to 1 GPa. The transition was found to occur at 1 GPa and 155 K with dT/dP=-0.3K/0.1 GPa. Here report that Ferromagnetic $Mn_3Ge_2$ thin films were successfully grown on GaAs(001) and GaSb(001) substrates using molecular beam epitaxy. Our result revealed that the substrate facilitates to modify magnetic and electrical properties due to tensile/compressive strain effect. The spin-flopping transition around 145 K remained for samples grown on GaSb(001) while it completely disappeared for samples grown on GaAs(001). The antiferromagnetism below 145K changed to ferromagnetism and remained upto 327K. The saturation magnetization was found to be 1.32 and $0.23\;{\mu}B/Mn$ at 5 K for samples grown on GaAs(001) and GaSb(001), respectively.

• 한국전기전자재료학회논문지
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• 제35권1호
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• pp.44-49
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• 2022

In this paper, we investigated current (I)- and voltage (V)-sweeping properties in a double-stack structure, Ge₂Sb₂Te₅/Ti/W-doped Ge₈Sb₂Te₁₁, a candidate medium for applications to multilevel phase-change memory. 200-nm-thick and W-doped Ge₂Sb₂Te₅ and W-doped Ge₈Sb₂Te₁₁ films were deposited on p-type Si(100) substrate using magnetron sputtering system, and the sheet resistance was measured using 4 point-probe method. The sheet resistance of amorphous-phase W-doped Ge₈Sb₂Te₁₁ film was about 1 order larger than that of Ge₂Sb₂Te₅ film. The I- and V-sweeping properties were measured using sourcemeter, pulse generator, and digital multimeter. The speed of amorphous-to-multilevel crystallization was evaluated from a graph of resistance vs. pulse duration (t) at a fixed applied voltage (12 V). All the double-stack cells exhibited a two-step phase change process with the multilevel memory states of high-middle-low resistance (HR-MR-LR). In particular, the stable MR state is required to guarantee the reliability of the multilevel phase-change memory. For the Ge₂Sb₂Te₅ (150 nm)/Ti (20 nm)/W-Ge₈Sb₂Te₁₁ (50 nm), the phase transformations of HR→MR and MR→LR were observed at t<30ns and t<65ns, respectively. We believe that a high speed and stable multilevel phase-change memory can be optimized by the double-stack structure of proper Ge-Sb-Te films separated by a barrier metal (Ti).

• 한국전자파학회논문지
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• 제21권11호
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• pp.1318-1323
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• 2010

밀리미터파 대역의 부품 수요가 많아질 것으로 예상되어지는 57~63 GHz 대역의 하향 변환 혼합기를 IHP SiGe 0.25 um 공정을 이용하여 설계 및 제작하였다. 혼합기 RF 단에 크기를 줄인 3D 발룬(balun)을 위치하였으며, 혼합기는 두 개의 평형 혼합기로 구성하고 LO 신호의 억압과 출력단의 이득을 위하여 버퍼(buffer) 증폭기를 위치하였다. 측정 결과, 변환 이득 13.8 dB, $P1dB_{in}$ -17 dBm, 전류 소모는 88 mA의 특성을 나타내었다.

• 한국자기학회지
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• 제19권3호
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• pp.89-93
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• 2009

저온 증착법으로 성장시킨 비정질 $Ge_{1-x}Mn_x$ 박막을 열처리하여 전기적, 자기적 특성을 연구하였다. 비정질 박막의 두께는 $1,000{\sim}5,000\;{\AA}$이고 비정질 $Ge_{1-x}Mn_x$ 박막을 고 진공 분위기 하에서 각각 $300^{\circ}C$, $400^{\circ}C$, $500^{\circ}C$, $600^{\circ}C$, $700^{\circ}C$ 온도에서 3분 동안 열처리 하였다. 원 시료의 $Ge_{1-x}Mn_x$ 박막을 X-선 회절로 분석해보면 비정질 구조를 보였지만 열처리를 함으로써 결정화되었다. 비정질 $Ge_{1-x}Mn_x$ 박막에서 결정화가 이루어진 온도는 Mn 농도에 따라 변화하였다. 비정질 $Ge_{1-x}Mn_x$ 박막은 p형 캐리어를 가지고 있고 열처리 동안에도 캐리어 형태는 변하지 않았다. 하지만, 전기 비저항은 열처리 온도가 증가함에 따라 증가하였다. 자기적 특성에서 원 시료의 비정질 $Ge_{1-x}Mn_x$ 박막은 강자성특성을 보이면서 큐리온도는 약 130 K 정도이다. 열처리한 $Ge_{1-x}Mn_x$ 박막의 큐리온도와 포화 자화값은 열처리 온도에 따라 증가한다. 자화거동과 X-선 분석을 통해 열처리한 $Ge_{1-x}Mn_x$ 박막에 전기적, 자기적 특성의 변화는 강자성 $Ge_3Mn_5$ 상이 형성되었음을 나타낸다.

• 한국전기전자재료학회논문지
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• 제30권3호
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• pp.133-138
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• 2017

We evaluated the structural, electrical and optical properties of tungsten (W)-doped $Ge_8Sb_2Te_{11}$ thin films. In a previous work, GeSbTe alloys were doped with different materials in an attempt to improve thermal stability. 200 mm thick $Ge_8Sb_2Te_{11}$ and W-doped $Ge_8Sb_2Te_{11}$ films were deposited on p-type Si (100) and glass substrates using a magnetron co-sputtering system at room temperature. The fabricated films were annealed in a furnace in the $0{\sim}400^{\circ}C$ temperature range. The structural properties were analyzed using X-ray diffraction (X'pert PRO, Phillips). The results showed increased crystallization temperature ($T_c$) leading to thermal stability in the amorphous state. The optical properties were analyzed using an UV-Vis-IR spectrophotometer (Shimadzu, U-3501, range : 300~3,000 nm). The results showed an increase in the crystalline material optical energy band gap ($E_{op}$) and an increase in the $E_{op}$ difference (${\Delta}E_{op}$). This is a good effect to reduce memory device noise. The electrical properties were analyzed using a 4-point probe (CNT-series). This showed increased sheet resistance ($R_s$), which reduces programming current in the memory device.

• 천문학논총
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• 제32권1호
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• pp.351-353
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• 2017

To realize large-format compact array detectors covering a wide far-infrared wavelength range up to 200 µm, we have been developing Blocked-Impurity-Band (BIB) type Ge detectors with the room-temperature surface-activated wafer bonding technology provided by Mitsubishi Heavy Industries. We fabricated various types of $p^+-i$ junction devices which possessed a BIB-type structure, and evaluated their spectral response curves using a Fourier transform spectrometer. From the Hall effect measurement, we also obtained the physical characteristics of the $p^+$ layers which constituted the $p^+-i$ junction devices. The overall result of our measurement shows that the $p^+-i$ junction devices have a promising applicability as a new far-infrared detector to cover a wavelength range of $100-200{\mu}m$.

• 한국지반환경공학회 논문집
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• 제15권1호
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• pp.63-68
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• 2014

본 연구에서는 UV-A 조사를 통해 titanium dioxide($TiO_2$), hydroxyapatite(HAP)와 germanium(Ge)의 다양한 복합촉매를 통한 항생제(lincomycin, LM)의 광촉매 제거를 조사하였다. 우선, 다양한 복합촉매의 향상된 광촉매능을 비교하였고, 도출된 제거효율은 $TiO_2/HAP/Ge$ > $TiO_2/Ge$ > $TiO_2/HAP$ 순으로 관찰되었다. $TiO_2/HAP/Ge$의 조성은 반응표면법의 하나인 혼합물분석(mixture analysis)에 기초하여 통계적 방안이 수행되었다. 각 인자별 6개의 조건을 포함하도록 설정한 독립변수 $TiO_2(X_1)$, HAP($X_2$)와 Ge($X_3$)의 LM($Y_1$)과 TOC($Y_2$) 제거에 대한 영향을 살펴보았다. 분산분석(ANOVA)의 회귀분석항은 유의한 p값(p<0.05)과 높은 결정계수 값($R^2$ of $Y_1=99.28%$ and $R^2$ of $Y_2=98.91%$)을 나타냈다. 등고선도와 반응곡선을 통해 UV-A 조사조건에서 $TiO_2$/HAP/Ge 조성에 따른 LM의 제거를 나타냈다. TOC($Y_2$) 제거를 기준으로 도출된 최적조성비는 코드화 값으로 $X_1=0.6913$, $X_2=0.2313$과 $X_3=0.0756$으로 나타났다. 실제 적용에 따른 비교 실험 결과는 LM과 TOC의 평균제거율이 각각 99.2%와 49.3%로 나타나 모델의 예측과 잘 부합하였다.

• 한국전기전자재료학회논문지
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• 제37권1호
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• pp.88-93
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• 2024

To evaluate the possibility as a multi-level memory medium for the Ge₂Sb₂Te₅/TiN/W-doped Ge₂Sb₂Te₅ cell structure, the crystallization rate and stabilization characteristics according to voltage (V)- and current (I)- pulse sweeping were investigated. In the cell structures prepared by a magnetron sputtering system on a p-type Si (100) substrate, the Ge₂Sb₂Te₅ and W-doped Ge₂Sb₂Te₅ thin films were separated by a barrier metal, TiN, and the individual thicknesses were varied, but the total thickness was fixed at 200 nm. All cell structures exhibited relatively stable multi-level states of high-middle-low resistance (HR-MR-LR), which guarantee the reliability of the multilevel phase-change random access memory (PRAM). The amorphousto-multilevel crystallization rate was evaluated from a graph of resistance (R) vs. pulse duration (T) obtained by the nanoscaled pulse sweeping at a fixed applied voltage (12 V). For all structures, the phase-change rates of HR→MR and MR→LR were estimated to be approximately t<20 ns and t<40 ns, respectively, and the states were relatively stable. We believe that the doublestack structure of an appropriate Ge-Sb-Te film separated by barrier metal (TiN) can be optimized for high-speed and stable multilevel PRAM.

• 한국방사선학회논문지
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• 제12권5호
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• pp.575-582
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• 2018

PET와 PET/CT의 검사 영상품질관리를 위해서는 F-18 방사능측정기의 정도관리가 필요하다. Ge-68/Ga-68 Rod Sources을 선원을 이용하여 의료기관에서 사용하고 있는 5종류의 방사능측정기의 방사능 측정의 정확도와 정밀도를 확인하였다. CRC-15R, CRC-15 PET, CRC-712M, CRC-15 베타 및 CRC-25PET에 대한 측정값과 기준값 사이의 방사능 양에 따른 상관관계는 0.99999 (P <0.0001)로 매우 높은 선형성을 보였다. 정확도 테스트에서 CRC-15R, CRC-15 PET, CRC-712M, CRC-15 베타 및 CRC-25PET 모델은 각각 -3.232 %, -1.342 %, -2.815 %, -2.913 % 및 -3.089 %를 이었다. 국내와 국제기준인 정확도 ${\pm}10%$, 정밀도 ${\pm}5%$ 이내로 기준을 만족하였고 반감기가 짧은 F-18에 비하여 경제성 있고 비교적 긴 기간 동안 안정적으로 정도관리가 가능하다는 것을 확인하였다.

• 한국분말재료학회지
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• 제18권5호
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• pp.449-455
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• 2011

In this study, p-type $(AgSbTe_2)_{15}(GeTe)_{85}$: TAGS-85 compound powders were prepared by gas atomization process, and then their microstructures and mechanical properties were investigated. The fabricated powders were of spherical shape, had clean surface, and illustrated fine microstructure and homogeneous $AgSbTe_2$ + GeTe solid solution. Powder X-ray diffraction results revealed that the crystal structure of the TAGS-85 sample was single rhombohedral GeTe phase, which with a space group $R_{3m}$. The grain size of the powder particles increased while the micro Vickers hardness decreased with increasing annealing temperature within the range of 573 K and 723 K due to grain growth and loss of Te. In addition, the crystal structure of the powder went through a phase transformation from rhombohedral ($R_{3m}$) at low-temperature to cubic ($F_{m-3m}$) at high-temperature with increasing annealing temperature. The micro Vickers hardness of the as-atomized powder was around 165 Hv, while it decreased gradually to 130 Hv after annealing at 673K, which is still higher than most other fabrication processes.