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EVALUATION OF FAR-INFRARED BIB-TYPE GE DETECTORS FABRICATED WITH THE SURFACE-ACTIVATED WAFER BONDING TECHNOLOGY

  • Hanaoka, Misaki (Graduate School of Science, Nagoya University) ;
  • Kaneda, Hidehiro (Graduate School of Science, Nagoya University) ;
  • Oyabu, Shinki (Graduate School of Science, Nagoya University) ;
  • Hattori, Yasuki (Graduate School of Science, Nagoya University) ;
  • Tanaka, Kotomi (Graduate School of Science, Nagoya University) ;
  • Ukai, Sota (Graduate School of Science, Nagoya University) ;
  • Shichi, Kazuyuki (Graduate School of Science, Nagoya University) ;
  • Wada, Takehiko (Institute of Space and Astronautical Science, Japan Aerospace Exploration Agency) ;
  • Suzuki, Toyoaki (SRON Netherlands Institute for Space Research) ;
  • Watanabe, Kentaroh (Research Center for Advanced Science and Technology, University of Tokyo) ;
  • Nagase, Koichi (Institute of Space and Astronautical Science, Japan Aerospace Exploration Agency) ;
  • Baba, Shunsuke (Institute of Space and Astronautical Science, Japan Aerospace Exploration Agency) ;
  • Kochi, Chihiro (Institute of Space and Astronautical Science, Japan Aerospace Exploration Agency)
  • Received : 2015.07.16
  • Accepted : 2016.10.26
  • Published : 2017.03.31
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Abstract

To realize large-format compact array detectors covering a wide far-infrared wavelength range up to 200 µm, we have been developing Blocked-Impurity-Band (BIB) type Ge detectors with the room-temperature surface-activated wafer bonding technology provided by Mitsubishi Heavy Industries. We fabricated various types of $p^+-i$ junction devices which possessed a BIB-type structure, and evaluated their spectral response curves using a Fourier transform spectrometer. From the Hall effect measurement, we also obtained the physical characteristics of the $p^+$ layers which constituted the $p^+-i$ junction devices. The overall result of our measurement shows that the $p^+-i$ junction devices have a promising applicability as a new far-infrared detector to cover a wavelength range of $100-200{\mu}m$.

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References

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