[KSCI] Korea Science Citation Index Service

http://dx.doi.org/10.5303/PKAS.2017.32.1.351

EVALUATION OF FAR-INFRARED BIB-TYPE GE DETECTORS FABRICATED WITH THE SURFACE-ACTIVATED WAFER BONDING TECHNOLOGY

Hanaoka, Misaki (Graduate School of Science, Nagoya University)
Kaneda, Hidehiro (Graduate School of Science, Nagoya University)
Oyabu, Shinki (Graduate School of Science, Nagoya University)
Hattori, Yasuki (Graduate School of Science, Nagoya University)
Tanaka, Kotomi (Graduate School of Science, Nagoya University)
Ukai, Sota (Graduate School of Science, Nagoya University)
Shichi, Kazuyuki (Graduate School of Science, Nagoya University)
Wada, Takehiko (Institute of Space and Astronautical Science, Japan Aerospace Exploration Agency)
Suzuki, Toyoaki (SRON Netherlands Institute for Space Research)
Watanabe, Kentaroh (Research Center for Advanced Science and Technology, University of Tokyo)
Nagase, Koichi (Institute of Space and Astronautical Science, Japan Aerospace Exploration Agency)
Baba, Shunsuke (Institute of Space and Astronautical Science, Japan Aerospace Exploration Agency)
Kochi, Chihiro (Institute of Space and Astronautical Science, Japan Aerospace Exploration Agency)

Publication Information

Publications of The Korean Astronomical Society / v.32, no.1, 2017 , pp. 351-353 More about this Journal

Abstract

To realize large-format compact array detectors covering a wide far-infrared wavelength range up to 200 µm, we have been developing Blocked-Impurity-Band (BIB) type Ge detectors with the room-temperature surface-activated wafer bonding technology provided by Mitsubishi Heavy Industries. We fabricated various types of $p^+-i$ junction devices which possessed a BIB-type structure, and evaluated their spectral response curves using a Fourier transform spectrometer. From the Hall effect measurement, we also obtained the physical characteristics of the $p^+$ layers which constituted the $p^+-i$ junction devices. The overall result of our measurement shows that the $p^+-i$ junction devices have a promising applicability as a new far-infrared detector to cover a wavelength range of $100-200{\mu}m$ .

Keywords

instruments: far-infrared detector;

Citations & Related Records

Reference

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