• 제목/요약/키워드: p-layer

검색결과 4,119건 처리시간 0.035초

P3HT를 이용한 다층막 전계발광 소자의 전기-광학적 특성 (The Electro-optical Properties of Multilayer EL Devices with P3HT as Emitting layer)

  • 김대중;김주승;김정호;구할본
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2003년도 하계학술대회 논문집 Vol.4 No.2
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    • pp.1018-1021
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    • 2003
  • We have synthesized poly(3-hexylthiophene) and studied the optical properties of P3HT for applying to the red emitting materials of organic electroluminescent device. Usually, an organic EL device is composed of single layer like anode/emitting layer/cathode, but additional layer such as hole transport, electron transport and buffer layer is deposited to improve device efficiency. In this study, Multilayer EL devices were fabricated using tris(8-hydroxyquinolinate) aluminum($Alq_3$) as electron transport material, (N,N'-diphenyl-N,,N'(3-methylphenyl)-1,1'-biphenyl-4,4'diamine))(TPD) as hole transport/electron blocking materials and LiF as buffer layer. That is, a device structure of ITO/blending layer(TPD+P3HT)/$Alq_3$/LiF/Al was employed. In the Multilayer device, the luminance of $10{\mu}W/cm^2$ obtained at 10V. And, we present the experimental evidence of the enhancement of the Foster energy transfer interaction in emitting layer.

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HIT 층 두께 변화를 통한 태양전지 효율 특성 (The characteristics of Efficiency through HIT layer thickness)

  • 김무중;편진호;이준신
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2010년도 하계학술대회 논문집
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    • pp.232-232
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    • 2010
  • Simulation Program (AFORS-HET 2.4.1) was used, include the basic structure of crystalline silicon thin film as above, under the intrinsic a-Si:H films bonded symmetrical structure (Symmetrical structure) were used. The structure of ITO, a-Si p-type, intrinsic a-Si, c-Si, intrinsic a-Si, a-Si n-type, metal (Al) layer has one of the seven. When thickness for each layer was given the change, the changes of a-Si p-type layer and the intrinsic a-Si layer on top had an impact on efficiency. Efficiency ratio of p-type a-Si:H layer thickness was sensitive to, especially a-Si: H layer thickness is increased in a rapid decrease in Jsc and FF, and efficiency was also decreased.

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비정질 실리콘 태양전지에서 투명전도막/p층 계면 특성분석 (The characteristic analysis of TCO/p-layer interface in Amorphous Silicon Solar cell)

  • 이지은;이정철;오병성;송진수;윤경훈
    • 신재생에너지
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    • 제3권4호
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    • pp.63-68
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    • 2007
  • 유리를 기판으로 하는 superstrate pin 비정질 실리콘 태양전진에서 전면 투명전도막(TCO)과 p-층의 계면은 태양전지 변환효율에 큰 영향을 미친다. 면투명전도막(TCO)으로 현재 일반적으로 사용되는 ZnO:Al는 $SnO_2:F$보다 전기, 광학적으로 우수하고, 안개율 (Haze)높으며, 수소 플라즈마에서 안정성이 높은 특징을 갖고 있다. 그래서 박막 태양전지의 특성향상에 매우 유리하나, 태양전지로 제조했을 때, $SnO_2$보다 충진율(Fill Factor:F.F)과 $V_{oc}$가 감소한다는 단점을 가지고 있다. 본 실험실에서는 $SnO_2:F$dml F.F.가 72%이 나온 반면 ZnO:Al의 F.F은 68%에 그쳤다. 이들 원인을 분석하기 위해 TCO/p-layer의 전기적 특성을 알아 본 결과, $SnO_2:F$보다 ZnO:Al의 직렬저항이 높게 측정되었다. 이러한 결과를 바탕으로 p-layer에 $R=(H_2/SiH_4)=25$로 변화, p ${\mu}c$-Si:H/p a-SiC:H로 p-layer 이중 증착, p-layer의 boron doping 농도를 증가시키는 실험을 하였다. 직렬저항이 가장 낮았던 p ${\mu}c$-Si:H/p a-SiC:H 인 p-layer 이중 증착에서 $V_{oc}$는 0.95V F.F는 70%이상이 나왔다. 이들 각 p층의 $E_a$(Activiation Energy)를 구해본 결과, ${\mu}c$-Si:H의 Ea 가 가장 낮은 것을 관찰 할 수 있었다.

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Bacillus polyfermenticus SCD의 Three Layer Coating에 의한 pH, 열, 높은 glucose 농도에 대한 안정성효과 (Increased Stability of Bacillus polyfermenticus SCD in Low pH, High Temperature and High Glucose Concentration via Three Layer Coating)

  • 이진옥;전경동;강재선;이재화
    • KSBB Journal
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    • 제19권3호
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    • pp.221-225
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    • 2004
  • Bacillus sp. 유래의 Bacillus polyfermenticus SCD를 Bisroo $t^{ⓡ}$라고 부르고, 이것은 생균제로서 산업적으로 매우 유용하다. 본 연구에서는 B. polyfermenticus SCD를 산업적으로 활용성을 증대시키기 위해 three layer coating법을 사용하여 인공위액의 pH 변화에 대한 안정성과 열안정성, glucose 농도에 따른 안정성을 연구하였다. 그 결과 코팅한 B. polyfermenticus SCD가 인공위액에 대한 내성에서는 배양 4시간을 기준으로 pH 2는 30%, pH 4는 20%, pH 6은 14% 상승효과가 있었음을 알 수 있었고, 온도변화에 대한 안정성에서는 코팅한 B. polyfermenticus SCD가 8$0^{\circ}C$에서 2시간 기준으로 안정성이 약 40% 증진됨을 확인할 수 있었다. 고농도 (30%)의 glucose에서 코팅한 B. polyfermenticus SCD는 안정하였으며, 코팅하지 않은 것보다 약 50% 안정성이 증대됨을 확인할 수 있었다. 그리고 pH 4.0에서는 코팅한 B. polyfermenticus SCD는 코팅을 하지 않은 B polyfermenticus SCD보다 전체적으로 생존율이 40% 이상, pH 6.0에서는 생존율이 42% 이상 증진됨을 알 수 있었다.

델타 도핑한 P형 SiC막의 평가 (Characterization of Delta-Doped P-Type SiC Films)

  • 김태성;정우성;남해곤
    • 태양에너지
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    • 제10권3호
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    • pp.46-52
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    • 1990
  • P층의 정공농도를 높이기 위하여 ${\delta}$-doped P층을 갖는 새로 구상된 a-Si 태양전지를 제작하였다. ${\delta}$-doped P층은 0.1-0.5 원자층의 박막 B층과 undoped a-Si의 여러층으로 구성되어 있다. B층은 광 CVD법과 열분해기법으로 증착시켰다. ${\delta}$-doped P층 박막에 대한 구조적, 광학적 및 전기적 특성을 FTIR, AES, SIMS등을 이용하여 평가하였다. 이 연구의 결과로서는 ${\delta}$-doped P층을 갖는 태양전지에 대하여 12.5%의 에너지변환효율을 달성하였다.

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선박 프로펠러의 케비테이션 침식 저항 향상을 위한 Ni-P 무전해 도금층 형성 및 열처리를 통한 미세조직 제어 (Electroless Ni-P Plating and Heat Treatments of the Coating Layer for Enhancement of the Cavitation Erosion Resistance of Vessel Propellers)

  • 김영재;손인준;이승훈
    • 한국재료학회지
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    • 제27권8호
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    • pp.409-415
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    • 2017
  • For enhanced cavitation erosion resistance of vessel propellers, an electroless Ni-P plating method was introduced to form a coating layer with high hardness on the surface of Cu alloy (CAC703C) used as vessel propeller material. An electroless Ni-P plating reaction generated by Fe atoms in the Cu alloy occurred, forming a uniform amorphous layer with P content of ~10 wt%. The amorphous layer transformed to (Ni3P+Ni) two phase structure after heat treatment. Cavitation erosion tests following the ASTM G-32 standard were carried out to relate the microstructural changes by heat treatment and the cavitation erosion resistance in distilled water and 3.5 wt% NaCl solutions. It was possible to obtain excellent cavitation erosion resistance through careful microstructural control of the coating layer, demonstrating that this electroless Ni-P plating process is a viable coating process for the enhancement of the cavitation erosion resistance of vessel propellers.

고 안정화 프로터결정 실리콘 다층막 태양전지 (Highly Stabilized Protocrystalline Silicon Multilayer Solar Cells)

  • 임굉수;곽중환;권성원;명승엽
    • 한국신재생에너지학회:학술대회논문집
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    • 한국신재생에너지학회 2005년도 춘계학술대회
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    • pp.102-108
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    • 2005
  • We have developed highly stabilized (p-i-n)-type protocrystalline silicon (pc-Si:H) multilayer solar cells. To achieve a high conversion efficiency, we applied a double-layer p-type amorphous silicon-carbon alloy $(p-a-Si_{1-x}C_x:H)$ structure to the pc-Si:H multilayer solar cells. The less pronounced initial short wavelength quantum efficiency variation as a function of bias voltage proves that the double $(p-a-Si_{1-x}C_x:H)$ layer structure successfully reduces recombination at the p/i interface. It was found that a natural hydrogen treatment involving an etch of the defective undiluted p-a-SiC:H window layer before the hydrogen-diluted p-a-SiC:H buffer layer deposition and an improvement of the order in the window layer. Thus, we achieved a highly stabilized efficiency of $9.0\%$ without any back reflector.

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Diaquabis(ethylenediamine)nickel(II) Bis(p-toluenesulfonate) Monohydrate 층상 화합물의 합성과 구조 분석 (Synthesis and Structural Analysis of the Diaquabis(ethylenediamine)nickel(II) Bis(p-toluenesulfonate) Monohydrate)

  • 김종혁;이석근
    • 분석과학
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    • 제15권3호
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    • pp.317-320
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    • 2002
  • The layer structure of the title compound, $[Ni(en)_2(H_2O)_2](CH_3C_6H_4SO_3)_2(H_2O)$ (en = ethylenediamine), consists of discrete cations, anions, and solvate water molecules linked by a hydrogen bonding network. The central Ni atom of the cation layer has a slightly distorted octahedral coordination geometry with the ethylenediamine ligands functioning as a N,N'-bidentate and the water ligands bonding through oxygen in a trans arrangement. The p-toluenesulfonate of the anion layer has an alternate sulfonate group directed toward opposite side of the cation layer. This layer structure is stabilized by a hydrogen bond involving the O atoms of the sulfonate, the water ligand, solvate water molecule, and the N atoms of the ethylenediamine.

소재에 따른 자외선.복사열 차단력 (Protection Efficiency from Solar Radiation and Ultraviolet Radiation by Fabrics)

  • 김경수;최정화
    • 대한가정학회지
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    • 제40권10호
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    • pp.77-85
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    • 2002
  • This study was conducted to evaluate the efficiency of various fabrics in protecting from solar radiation and ultraviolet radiation(UV). Six kinds of fabrics were selected and examined in singles or doubles. It was studied how the materials and the thickness of air layer between the fabric and the floor affected the protection efficiency of fabrics from sunlight. The results were as followes; 1) Protection from solar radiation: In the case of over 2 cm air layer, doubled fabric composed of aluminum coating-nylon and white or black polyester/cotton(T/C) was the most protective(p<0.001). In the case of 0 cm air layer, the case without fabric and white T/C were more effective(p<0.001). And the thicker the air layer the more effective the protection. 2) Protection from UV : Doubled fabric composed of aluminum coating-nylon and black T/C was the most protective(p<0.001) and the thinner the air layer the more effective the protection(p<0.001).

Si 종형 Hall 소자의 자기감도 개선 (Magnetic Sensitivity Improvement of Silicon Vertical Hall Device)

  • 류지구;김남호;정수태
    • 센서학회지
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    • 제20권4호
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    • pp.260-265
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    • 2011
  • The silicon vertical hall devices are fabricated using a modified bipolar process. It consists of the thin p-layer at Si-$SiO_2$, interface and n-epi layer without $n^+$buried layer to improve the sensitivity and influence of interface effects. Experimental samples are a sensor type I with and type H without p+isolation dam adjacent to the center current electrode. The experimental results for both type show a more high current-related sensitivity than the former's vertical hall devices. The sensitivity of type H and type I are about 150 V/AT and 340 V/AT, respectively. This sensor's behavior can be explained by the similar J-FET model.