• Environmental Engineering Research
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• 제16권2호
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• pp.81-90
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• 2011

Different weight percentages of Ag, Pt, and Au doped nano $TiO_2$ were synthesized using the acetic acid hydrolyzed sol-gel method. The crystallite phase, surface morphology combined with elemental composition and light absorption properties of the doped nano $TiO_2$ were comprehensively examined using X-ray diffraction (XRD), $N_2$ sorption analysis, transmission electron microscopic (TEM), energy dispersive X-ray, and DRS UV-vis analysis. The doping of noble metals stabilized the anatase phase, without conversion to rutile phase. The formation of gold nano particles in Au doped nano $TiO_2$ was confirmed from the XRD patterns for gold. The specific surface area was found to be in the range 50 to 85 $m^2$/g. TEM images confirmed the formation a hexagonal plate like morphology of nano $TiO_2$. The photocatalytic activity of doped nano $TiO_2$ was evaluated using 4-chlorophenol as the model pollutant. Au doped (0.5 wt %) nano $TiO_2$ was found to exhibit higher photocatalytic activity than the other noble metal doped nano $TiO_2$, pure nano $TiO_2$ and commercial $TiO_2$ (Degussa P-25). This enhanced photocatalytic activity was due to the cathodic influence of gold in suppressing the electron-hole recombination during the reaction.

• Advances in materials Research
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• 제12권3호
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• pp.179-192
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• 2023

We have studied the structural and optical properties of the non-doped and Co 0.08 at.%, Co 0.02 at.%, and Co 0.11 at.% doped ZnO nanorods (NRs) synthesized using the simple low-temperature chemical bath deposition (CBD) method at 95℃ for 2 hours. The scanning electron microscope (SEM) images confirmed the morphology of the ZnO NRs are affected by Co incorporation. As observed, the Co 0.08 at.% doped ZnO NRs have a larger dimension with an average diameter of 153.4 nm. According to the International Centre for Diffraction Data (ICDD) number #00-036-1451, the x-ray diffraction (XRD) pattern of non-doped and Co-doped ZnO NRs with the preferred orientation of ZnO NRs in the (002) plane possess polycrystalline hexagonal wurtzite structure with the space group P63mc. Optical absorbance indicates the Co 0.08 at.% doped ZnO NRs have stronger and blueshift bandgap energy (3.104 ev). The room temperature photoluminescence (PL) spectra of ZnO NRs exhibited excitonicrelates ultraviolet (UV) and defect-related green band (GB) emissions. By calculating the UV/GB intensity, the Co 0.08 at.% is the proper atomic percentage to have fewer intrinsic defects. We predict that Co-doped ZnO NRs induce a blueshift of near band edge (NBE) emission due to the Burstein-Moss effect. Meanwhile, the redshift of NBE emission is attributed to the modification of the lattice dimensions and exchange energy.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1996년도 하계학술대회 논문집 C
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• pp.1547-1549
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• 1996

The electrical and optical switching characteristics of gold-doped silicon p-i-n diodes have been investigated. The device shows a dark switching voltage of about 500 V. The switching voltage decreases rapidly when the illumination level is increased. The differential sensitivity of optical gating over linear region is $d(V_{Th}/V_{Tho})/dP_{Ph}$=0.25/uW. The turn-on delay time and the turn-on rise time decrease with increasing optical pulse power. The turn-off delay and the fall time are negligible.

• 한국전기전자재료학회논문지
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• 제27권10호
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• pp.642-647
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• 2014

For feasible study of opto-electrical application regarding to oxide semiconductor, we implemented the N doped ZnO growth using a atomic layer deposition technique. The p-type ZnO deposition, necessary for ZnO-based optoelectronics, has considered to be very difficulty due to sufficiently deep acceptor location and self-compensating process on doping. Various sources of N such as $N_2$, $NH_3$, NO, and $NO_2$ and deposition techniques have been used to fabricate p-type ZnO. Hall measurement showed that p-type ZnO was prepared in condition with low deposition temperature and dopant concentration. From the evaluation of photoluminescence spectroscopy, we could observe defect formation formed by N dopant. In this paper, we exhibited the electrical and optical properties of N-doped ZnO thin films grown by atomic layer deposition with $NH_3OH$ doping source.

• 공업화학
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• 제33권6호
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• pp.588-593
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• 2022

MgO 입자 표면에 첨가된 P₂O₅의 가수분해, 발수성, 그리고 절연 거동에 미치는 영향을 조사하였다. MgO 표면에 첨가된 P₂O₅는 가수분해반응 억제와 발수성을 동시에 나타내기 때문에 독특한 절연거동을 나타내었다. 따라서 절연거동은 MgO의 표면수화반응에 의한 Mg(OH)₂와 OH^-전하 전달비와 친수성에 반비례하였다. 시효에 따른 MgO의 절연성은 표면수화반응, 첨가된 도펀트 종의 밴드갭, 그리고 도펀트의 친수성과 소수성에 강한 영향성과 의존성을 나타내었다. 마지막으로 친수성인 MgO의 표면수화반응을 억제하는 전기절연성을 발현하여 열전달매체 응용분야에서 큰 잠재력을 제공하는 것으로 나타났다.

• 공업화학
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• 제21권3호
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• pp.311-316
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• 2010

본 연구는 높은 분산 안정성을 유지하는 antimony-doped tin oxide (ATO) 분산액을 제조하기 위하여, 습식 볼밀법으로 분쇄시간에 따른 ATO의 입자크기, 입도분포, 분산성의 변화를 고찰하였다. 또한 각각의 습식 볼밀 처리된 ATO 분산액의 pH를 변화시켜 ATO 분산액의 분산 특성을 고찰하였다. 습식 볼밀 분쇄 조건에 의하여 ATO의 입자크기 및 입도 분포 변화는 레이저회절 입도분석기와 주사전자현미경을 이용하여 평가하였고, 습식 볼밀 분쇄 시간 및 pH조건에 따른 ATO 입자의 분산성은 제타전위 측정법과 다중광산란(multiple light scattering)법을 이용하여 평가하였다. 분쇄 조건 중 60 min 동안 처리된 ATO 입자 크기는 30% 이하로 작아지고, $1{\sim}35{\mu}m$에서 $0.1{\sim}5{\mu}m$로 입도분포를 갖는 균일한 입자를 얻을 수 있었다. 그러나 분쇄조건을 60 min 이상 처리한 것은 역분쇄 및 재응집 현상의 발생으로 인하여 한계 분쇄 시간이 나타나는 것을 알 수 있었다. 이러한 결과로부터 ATO 분산액은 습식 볼밀 분쇄 시간을 증가시킬수록 입자 크기가 감소하고 표면 에너지가 증가하여 입자간의 반발력이 커지게 됨을 알 수 있었고, 또한 용액의 pH를 증가시킬수록 입자의 표면 이온화도가 커짐으로 인하여 ATO 분산액의 분산성이 향상되는 것을 알 수 있었다.

• Advances in nano research
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• 제3권3호
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• pp.123-131
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• 2015

The unintentionally doped and bismuth (Bi) doped zinc oxide (ZnO) films were prepared by spray pyrolysis at $450^{\circ}C$ with zinc acetate and bismuth nitrate precursor. The n-type conduction with concentration $6.13{\times}10^{16}cm^{-3}$ can be observed for the unintentionally doped ZnO. With the increasing of bismuth nitrate concentration in precursor, the p-type conduction can be observed. The p-type concentration $4.44{\times}10^{17}cm^{-3}$ can be achieved for the film with the Bi/Zn atomic ratio 5% in the precursor. The photoluminescence spectroscopy with HeCd laser light source was studied for films with different Bi doping. The photocatalytic activity for the unintentionally doped and Bi-doped ZnO films was studied through the photodegradation of Congo red under UV light illumination. The effects of different Bi contents on photocatalytic activity are studied and discussed. Results show that appropriate Bi doping in ZnO can increase photocatalytic activity.

• 한국재료학회지
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• 제8권7호
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• pp.579-583
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• 1998

P가 고농도로 도핑된 다결정 Si 기판 위에 Co/Ti 이중층막을 스퍼터 증착하고 급속열처리함으로써 얻어지는 실리사이드 층구조, 실리사이드막의 응집, 그리고 도펀트의 재분포 등을 단결정 Si 기판 위에서의 그것들과 비교하여 조사하였다. 다결정 Si 기판위에 형성한 Co/Si 이중층을 열처리할 때 단결정 기판에서의 경우보다 $CoSi_2$로의 상천이는 약간 더 낮은 온도에서 시작되며, 막의 응집은 더 심하게 일어난다. 또한, 다결정 Si 기판내의 도펀트보다 웨이퍼 표면을 통하여 바깥으로 outdiffusion 함으로써 소실되는 양이 훨씬 더 많다. 이러한 차이는 다결정 Si 내에서의 결정립계 확산과 고농도의 도펀트에 기인한다. Co/Ti/doped-polycrystalline si의 실리사이드화 열처리후의 층구조는 polycrystalline CoSi2/polycrystalline Si 으로서 Co/Ti(100)Si을 열처리한 경우의 층구조인 Co-Ti-Si/epi-CoSi2/(100)Si 과는 달리 Co-Ti-Si층이 사라진다.

• Journal of Magnetics
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• 제8권4호
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• pp.142-145
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• 2003

Valence states and electronic structures of Cr-doped $Nd_{1/2}A_{1/2}Mn_{1-y}Cr_{y}O_3$(NAMO; A=Ca, Sr) manganites have been investigated using x-ray absorption spectroscopy (XAS) and high-resolution photoemission spectroscopy (PES). All the Cr-doped NAMO systems exhibit the clear metallic Fermi edges in the Mn $e_{g}$ PES spectra near $E_{F}$. The spectral intensity at $E_{F}$ is higher for Cr-doped N $d_{l}$ 2/S $r_{l}$ 2/Mn $O_3$(NSMO) than for Cr-doped N $d_{l}$ 2/C $a_{l}$ 2/Mn $O_3$ (NCMO), reflecting the stronger metallic nature for NSMO than for NCMO. The measured Cr 2p XAS spectra are found to be very similar to that of C $r_2$ $O_3$, indicating that Cr ions in Cr-doped NAMO are in the trivalent C states ( $t^3$$_{2g}$). The Cr 2p XAS data are consistent with the Cr 3d PES spectra located at ∼1.3 eV below $E_{F}$ and having no emission near $E_{F}$.

• 한국세라믹학회:학술대회논문집
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• 한국세라믹학회 2000년도 추계총회,초청강연,특별강연,연구발표회
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• pp.158.1-158
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• 2000