• Progress in Superconductivity and Cryogenics
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• v.20 no.4
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• pp.41-45
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• 2018

We have investigated the effect of $Y_2O_3$ nanoparticles on the pinning properties of $Y_2O_3$-doped $GdBa_2Cu_3O_{7-{\delta}}$ (GdBCO) films. Both undoped and $Y_2O_3$-doped GdBCO films were grown on $CeO_2$-buffered MgO (100) single crystal substrates by pulsed laser deposition (PLD) using KrF (${\lambda}=248nm$) laser. The $Y_2O_3$ doping contents were controlled up to ~ 2.5 area% by varying the internal angles of $Y_2O_3$ sectors put on the top surface of GdBCO target. Compared with the $Gd_2O_3$-doped GdBCO films previously reported by our group [1], the $Y_2O_3$-doped GdBCO films exhibited less severe critical temperature ($T_c$) drop and thus slightly enhanced critical current densities ($J_c$) and pinning force densities ($F_p$) at 65 K for the applied field parallel to the c-axis of the GdBCO matrix (B//c) with increasing the doping content. Below 40 K, the in-field $J_c$ and $F_p$ values of all $Y_2O_3$-doped GdBCO films exhibited higher than those of undoped GdBCO film, suggesting that $Y_2O_3$ inclusions might act as effective pinning centers.

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.338.2-338.2
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• 2016

Al doped ZnO (AZO) thin films were deposited on Si substrates with rod-shaped-surface by pulsed laser deposition method (PLD). Si-rods were prepared through chemical etching. To analyze the influence on the formation of the rod structure, samples with various chemical etching conditions such as AgNO3/HF ratio, etching time, and solution temperature were prepared. The morphology of Si-rod structures were examined by FE-SEM. Fig. 1 shows a typical structure of n-AZO/p-Si-rod juncions. The fabricated n-AZO/p-Si-rod devices exhibited p-n diode current-voltage characteristics. We compared the I-V characteristics of n-AZO/p-Si-rod devices with the samples without Si-rod structure.

• Korean Journal of Materials Research
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• v.18 no.10
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• pp.552-556
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• 2008

Modified thermal annealing was applied to the activation of the polycrystalline silicon films doped as p-type through implantation of $B_2H_6$. The statistical design of experiments was successfully employed to investigate the effect of rapid thermal annealing on activation of polycrystalline Si doped as p-type. In this design, the input variables are furnace temperature, power of halogen lamps, and alternating magnetic field. The degree of ion activation was evaluated as a function of processing variables, using Hall effect measurements and Raman spectroscopy. The main effects were estimated to be furnace temperature and RTA power in increasing conductivity, explained by recrystallization of doped ions and change of an amorphous Si into a crystalline Si lattice. The ion activation using rapid thermal annealing is proven to be a highly efficient process in low temperature polycrystalline Si technology.

• Korean Journal of Optics and Photonics
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• v.3 no.1
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• pp.50-54
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• 1992

Maskless depositon of copper onto n-doped and p-doped Si in an aqueous copper sulfate solution is investigated. On p-doped Si substrates, microscopic $(~10\mu\textrm{m}$) copper spots are deposited by illuminating continuous wave $Ar^+$ laser beam of wavelength 514.5 nm. Copper deposition on n-doped Si substrates is also achieved by shinning second harmonic pulses $(pulse width~25 nsec, \lambda=530 nm)$ of a passively Q-switched Nd:YAG laser. The observed deposition is attributed to the electric field resulting from the Galvanic potential of a semiconductor-electrolyte junction.

• Korean Chemical Engineering Research
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• v.49 no.3
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• pp.357-360
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• 2011

N-doped ZnO nanofilms were prepared by plasma enhanced atomic layer deposition method. $Zn(C_{2}H_{5})_{2}$, $O_{2}$ and $N_{2}$ were used as Zn, O and N sources, respectively, for N-doped ZnO films under variation of radio frequency (rf) power from 50-300W. Structural, optical and electrical properties of as-grown ZnO films were investigated with Xray diffraction(XRD), photoluminescence(PL) and Hall-effect measurements, respectively. Nitrogen content and p-type conductivity in ZnO nanofilms increased with the rf power.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.11a
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• pp.43-46
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• 2002

Ferroelectric Mg-doped SBT and Ti-doped SBT were successfully deposited on Pt/Ti/$SiO_2/Si$ substrate by using a sol-gel solution coating method. The solutions were prepared through out adding the metal alkoxide solutions to SBT solution. The typical hysteresis loop of the films was obtained at 5V. The measured $2P_r$ value were $16.50{\mu}C/cm^2$ for SBT, $18.98{\mu}C/cm^2$ and for Mg-doped SBT, and $17.10{\mu}C/cm^2$ for Ti-doped SBT at an applied voltage of 5V, respectively. And it is found that the leakage current densities are less than $10^{-7}A/cm^2$ when applied voltage is less than 10.8MV/cm, which indicates the excellent insulating characteristics.

• Journal of the Optical Society of Korea
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• v.17 no.2
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• pp.182-187
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• 2013

We present a comparative experimental analysis of the thermal spectroscopic characteristics of a phosphosilicate (P)-based ytterbium-doped fiber (YDF) against an aluminosilicate (Al)-based YDF in the temperature range of 25 to $150^{\circ}C$. We also characterize the fibers as gain media in a cladding-pumped amplifier configuration. While both fibers exhibit comparable trends in their thermal characteristics, there are noticeable distinctions in the fluorescence lifetime reduction rate and the spectral dependence of the transition cross-sections. The P- and Al-based YDFs present thermal lifetime reduction rates of $0.012%/^{\circ}C$ and $0.026%/^{\circ}C$, respectively. In particular, in the spectral region at ~940 nm, the absorption cross-section of the P-based YDF undergoes significantly less thermal change compared to that of the Al-YDF. In the cladding-pumped amplifier configuration operating at a total gain of 10 dB, the Al-based YDF generally performs betters than the P-based YDF in the temperature range of 25 to $75^{\circ}C$. However, it is highlighted that in the high temperature range of over $75^{\circ}C$, the latter shows a less gain reduction rate than the former, thereby yielding higher relative output power by 3.3% for a 1060-nm signal, for example.

• Journal of the Korean Institute of Telematics and Electronics D
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• v.36D no.4
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• pp.86-92
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• 1999

A SiGe p-channel MESFET using $\delta$-doped layers is designed and the considerabel enhancement of the current driving capability of the device is observed from the result of simulation. The channel consists of double $\delta$-doped layers separated by a low-doped spacer which consists of Si and SiGe. A quantum well is formed in the valence band of the Si/SiGe heterojunction and much more holes are accumulated in the SiGe spacer than those in the Si spacer. The saturation current is enhanced by the contribution of the holes in the spacer. Among the design parameters that affect the performance of the device, the thickness of the SiGe layer and the Ge composition are studied. The thickness of 0~300$\AA$ and the Ge composition of 0~30% are investigated, and saturation current is observed to be increased by 45% compared with a double $\delta$-doped Si p-channel MESFET.

• 한국정보디스플레이학회:학술대회논문집
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• 2007.08b
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• pp.1622-1624
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• 2007

In order to realize effective p-type doping in ZnO thin films, ZnO films were deposited on P-doped Silayers by RF-magnetron sputter deposition technique and annealed at various temperatures. The result indicated that ZnO film annealed at $700^{\circ}C$ showed p-type conduction with a high carrier concentration in the order of $10^{19}\;cm^{-3}$.

• JSTS:Journal of Semiconductor Technology and Science
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• v.6 no.1
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• pp.16-21
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• 2006

A simple doping method to fabricate a very thin channel body of the p-type FinFETs with a 20 nm gate length by solid-phase-diffusion (SPD) process was developed. Using the poly-boron-films (PBF) as a novel diffusion source of boron and the rapid thermal annealing (RTA), the p-type sourcedrain extensions of the FinFET devices with a threedimensional structure were doped. The junction properties of boron doped regions were investigated by using the $p^+-n$ junction diodes which showed excellent electrical characteristics. Single channel and multi-channel p-type FinFET devices with a gate length of 20-100 nm was fabricated by boron diffusion process using PBF and revealed superior device scalability.