한국정보디스플레이학회:학술대회논문집
- 2007.08b
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- Pages.1622-1624
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- 2007
Effect of annealing temperature on the electrical characteristics of P-doped ZnO thin films
- Kim, Jun-Kwan (Univ. of Science and Technology, Dept. of Next Generation Device Engineering, Teraelectronics device Team, IT-Convergence & Components Laboratory, Electronics and Telecommunications Research Institute) ;
- Lim, Jung-Wook (Teraelectronics device Team, IT-Convergence & Components Laboratory, Electronics and Telecommunications Research Institute) ;
- Kim, Hyun-Tak (Teraelectronics device Team, IT-Convergence & Components Laboratory, Electronics and Telecommunications Research Institute) ;
- Kim, Sang-Hun (Teraelectronics device Team, IT-Convergence & Components Laboratory, Electronics and Telecommunications Research Institute) ;
- Yun, Sun-Jin (Univ. of Science and Technology, Dept. of Next Generation Device Engineering, Teraelectronics device Team, IT-Convergence & Components Laboratory, Electronics and Telecommunications Research Institute)
- Published : 2007.08.27
Abstract
In order to realize effective p-type doping in ZnO thin films, ZnO films were deposited on P-doped Silayers by RF-magnetron sputter deposition technique and annealed at various temperatures. The result indicated that ZnO film annealed at