• Journal of applied mathematics & informatics
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• v.24 no.1_2
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• pp.437-448
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• 2007

Suppose K is a nonempty closed convex nonexpansive retract of a real uniformly convex Banach space E with P as a nonexpansive retraction. Let $T_1,\;T_2\;and\;T_3\;:\;K{\rightarrow}E$ be nonexpansive mappings with nonempty common fixed points set. Let $\{\alpha_n\},\;\{\beta_n\},\;\{\gamma_n\},\;\{\alpha'_n\},\;\{\beta'_n\},\;\{\gamma'_n\},\;\{\alpha'_n\},\;\{\beta'_n\}\;and\;\{\gamma'_n\}$ be real sequences in [0, 1] such that ${\alpha}_n+{\beta}_n+{\gamma}_n={\alpha}'_n+{\beta'_n+\gamma}'_n={\alpha}'_n+{\beta}'_n+{\gamma}'_n=1$, starting from arbitrary $x_1{\in}K$, define the sequence $\{x_n\}$ by $$\{zn=P({\alpha}'_nT_1x_n+{\beta}'_nx_n+{\gamma}'_nw_n)\;yn=P({\alpha}'_nT_2z_n+{\beta}'_nx_n+{\gamma}'_nv_n)\;x_{n+1}=P({\alpha}_nT_3y_n+{\beta}_nx_n+{\gamma}_nu_n)$$ with the restrictions $\sum^\infty_{n=1}{\gamma}_n<\infty,\;\sum^\infty_{n=1}{\gamma}'_n<\infty,\; \sum^\infty_{n=1}{\gamma}'_n<\infty$. (i) If the dual $E^*$ of E has the Kadec-Klee property, then weak convergence of a $\{x_n\}$ to some $x^*{\in}F(T_1){\cap}{F}(T_2){\cap}(T_3)$ is proved; (ii) If $T_1,\;T_2\;and\;T_3$ satisfy condition(A'), then strong convergence of $\{x_n\}$ to some $x^*{\in}F(T_1){\cap}{F}(T_2){\cap}(T_3)$ is obtained.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.39 no.10
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• pp.25-34
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• 2002

In this paper, silicidation induced Schottky contact area was obtained using the current voltage(I-V) characteristics of shallow cobalt silicided p+-n and n+-p junctions. In reverse bias region, Poole-Frenkel barrier lowering influenced predominantly the reverse leakage current, masking thereby the effect of Schottky contact formation. However, Schottky contact was conclusively shown to be the root cause of the modified I-V behavior of n+-p junction in the forward bias region. The increase of leakage current in silicided n+-p diodes is consistent with the formation of Schottky contact via cobalt slicide penetrating into the p-substrate or near to the junction area and generating trap sites. The increase of reverse leakage current is proven to be attributed to the penetration of silicide into depletion region in case of the perimeter intensive n+-p junction. In case of the area intensive n+-p junction, the silicide penetrated near to the depletion region. There is no formation of Schottky contact in case of the p+-n junction where no increase in the leakage current is monitored. The Schottky contact amounting to less than 0.01% of the total junction was extracted by simultaneous characterization of forward and reverse characteristics of silicided n+-p diode.

• Journal of the Korean Institute of Telematics and Electronics
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• v.19 no.5
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• pp.38-42
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• 1982

N+-P/P+solar cells were fabricated by using the polycrystalline silline wafer with the resistivity of 3-6 ohm-cm. minority carrier lifetimes, measured by Nd: YAG laser, were from 100ns up to 150ns. Conversion efficiency measured under AM 1 irradiation, were about 4%.

• YAKHAK HOEJI
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• v.41 no.5
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• pp.582-587
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• 1997

The 6.7-dichloroquinoline-5,8-dione (I) was reacted with ethyl acetoacetate in the presence of sodium ethoxide to yield 6-(${\alpha}$-acetyl-${\alpha}$-ethoxycarbonyl methyl)-7-chloro-qui noline-5,8-dione(II). When this compound II was reacted with some arylamine (phenyl, p-toluyl, p-fluorophenyl, p-chlorophenyl. p-bromophenyl, p-iodophenyl, p-trifluoromethylphenyl, p-dimethylaminophenyl,indanyl), 1N-aryl-2-methyl-3-ethoxycarbonyl pyridino[2,3-f]-indole-4.9-dione(IIIa-I) were obtained via intramolecular cyclization.

• Elastomers and Composites
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• v.34 no.2
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• pp.147-155
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• 1999

Waxes compounded into rubber migrate to the surface and form a protection film on the rubber surface. In general, antiozonants were used with wax to protect ozonation of rubber. Influence of wax barrier formed on the surface of a rubber vulcanizate on migration of antiozonants was studied using natural rubber (NR) vulcanizates containing various type waxes. IPPD (N-isopropyl-N'-phenyl-p-phenylenediamine), HPPD (N-l,3-dimethylbutyl-N'-phenyl-p-phenylenediamine), SBPPD (N,N'-di(sec-butyl)-p-phenylenediamine), and DMPPD (N,N'-di(1,4-dimethylpentyl)-p-phenylenediamine) were employed as antiozonants. Migration experiments were performed at constant temperatures of 60 and $80^{\circ}C$ for 10, 20, 30 days using a convection oven. The migration rates of the antiozonants in the vulcanizate without wax are faster than those in the vulcanizates containing waxes. The antiozonants migrate slower in the vulcanizate containing wax with a high molecular weight distribution than in the vulcanizate with a low one. The migration rates of DMPPD and SBPPD are faster than those of HPPD and IPPD.

• Journal of the Korea Society of Computer and Information
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• v.19 no.7
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• pp.71-76
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• 2014

There is to be virtually impossible to solve the very large digits of prime number p and q from composite number n=pq using integer factorization in typical public-key cryptosystems, RSA. When the public key e and the composite number n are known but the private key d remains unknown in an asymmetric-key RSA, message decryption is carried out by first obtaining ${\phi}(n)=(p-1)(q-1)=n+1-(p+q)$ and then using a reverse function of $d=e^{-1}(mod{\phi}(n))$. Integer factorization from n to p,q is most widely used to produce ${\phi}(n)$, which has been regarded as mathematically hard. Among various integer factorization methods, the most popularly used is the congruence of squares of $a^2{\equiv}b^2(mod\;n)$, a=(p+q)/2,b=(q-p)/2 which is more commonly used then n/p=q trial division. Despite the availability of a number of congruence of scares methods, however, many of the RSA numbers remain unfactorable. This paper thus proposes an algorithm that directly and immediately obtains ${\phi}(n)$. The proposed algorithm computes $2^k{\beta}_j{\equiv}2^i(mod\;n)$, $0{\leq}i{\leq}{\gamma}-1$, $k=1,2,{\ldots}$ or $2^k{\beta}_j=2{\beta}_j$ for $2^j{\equiv}{\beta}_j(mod\;n)$, $2^{{\gamma}-1}$ < n < $2^{\gamma}$, $j={\gamma}-1,{\gamma},{\gamma}+1$ to obtain the solution. It has been found to be capable of finding an arbitrarily located ${\phi}(n)$ in a range of $n-10{\lfloor}{\sqrt{n}}{\rfloor}$ < ${\phi}(n){\leq}n-2{\lfloor}{\sqrt{n}}{\rfloor}$ much more efficiently than conventional algorithms.

• Bulletin of the Korean Mathematical Society
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• v.56 no.4
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• pp.911-927
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• 2019

Let $\mathscr{B}^{{\eta},{\mu}}_{p,n}\;({\alpha});\;({\eta},{\mu}{\in}{\mathbb{R}},\;n,\;p{\in}{\mathbb{N}})$ denote all functions f class in the unit disk ${\mathbb{U}}$ as $f(z)=z^p+\sum_{k=n+p}^{\infty}a_kz^k$ which satisfy: $$\|\[{\frac{f^{\prime}(z)}{pz^{p-1}}}\]^{\eta}\;\[\frac{z^p}{f(z)}\]^{\mu}-1\| <1-{\frac{\alpha}{p}};\;(z{\in}{\mathbb{U}},\;0{\leq}{\alpha}<p)$$. And $\mathscr{M}^{{\eta},{\mu}}_{p,n}\;({\alpha})$ indicates all meromorphic functions h in the punctured unit disk $\mathbb{U}^*$ as $h(z)=z^{-p}+\sum_{k=n-p}^{\infty}b_kz^k$ which satisfy: $$\|\[{\frac{h^{\prime}(z)}{-pz^{-p-1}}}\]^{\eta}\;\[\frac{1}{z^ph(z)}\]^{\mu}-1\|<1-{\frac{\alpha}{p}};\;(z{\in}{\mathbb{U}},\;0{\leq}{\alpha}<p)$$. In this paper several sufficient conditions for some classes of functions are investigated. The authors apply Jack's Lemma, to obtain this conditions. Furthermore, sufficient conditions for strongly starlike and convex p-valent functions of order ${\gamma}$ and type ${\beta}$, are also considered.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.11a
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• pp.50-50
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• 2008

ZnO has been extensively studied for optoelectronic applications such as blue and ultraviolet (UV) light emitters and detectors, because it has a wide band gap (3.37 eV) anda large exciton binding energy of ~60 meV over GaN (~26 meV). However, the fabrication of the light emitting devices using ZnO homojunctions is suffered from the lack of reproducibility of the p-type ZnO with high hall concentration and mobility. Thus, the ZnO-based p-n heterojunction light emitting diode (LED) using p-Si and p-GaN would be expected to exhibit stable device performance compared to the homojunction LED. The n-ZnO/p-GaN heterostructure is a good candidate for ZnO-based heterojunction LEDs because of their similar physical properties and the reproducibleavailability of p-type GaN. Especially, the reduced lattice mismatch (~1.8 %) and similar crystal structure result in the advantage of acquiring high performance LED devices with low defect density. However, the electroluminescence (EL) of the device using n-ZnO/p-GaN heterojunctions shows the blue and greenish emissions, which are attributed to the emission from the p-GaN and deep-level defects. In this work, the n-ZnO:Ga/p-GaN:Mg heterojunction light emitting diodes (LEDs) were fabricated at different growth temperatures and carrier concentrations in the n-type region. The effects of the growth temperature and carrier concentration on the electrical and emission properties were investigated. The I-V and the EL results showed that the device performance of the heterostructure LEDs, such as turn-on voltage and true ultraviolet emission, developed through the insertion of a thin intrinsic layer between n-ZnO:Ga and p-GaN:Mg. This observation was attributed to a lowering of the energy barriers for the supply of electrons and holes into intrinsic ZnO, and recombination in the intrinsic ZnO with the absence of deep level emission.

• Honam Mathematical Journal
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• v.30 no.3
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• pp.513-519
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• 2008

Let (R, m) be a Noetherian local ring with maximal ideal m, E := $E_R$(R/m) and let I be an ideal of R. Let M and N be finitely generated R-modules. It is shown that $H^n_I(M,(H^n_I(N)^{\vee})){\cong}(M{\otimes}_RN)^{\vee}$ where grade(I, N) = n = $cd_i$(I, N). We also show that for n = grade(I, R), one has $End_R(H^n_I(P,R)^{\vee}){\cong}Ext^n_R(H^n_I(P,R),P^*)^{\vee}$.

• Journal of Nutrition and Health
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• v.27 no.7
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• pp.687-698
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• 1994

The effects of age and dietary fatty acid composition on lipid metabolism were investigated in Sprague-Dawley strain male rats. These animals weighing 88.6$\pm$2.2g were fed 10% dietary fat(W/W, 20% of total energy) with 0.5, 1, 2 P/S ratio and in each P/S ratio there were three different levels of n-6/n-3 fatty acid ratio ; 2, 4, 8. The experimental period was 1 month, 6 months and 12 months. The results of this study were as follows. The body weight of rats increased rapidly for the first two months, then increased slowly until 7 to 8 months. After 10 months of dietary regimen their weight decreased. The weight of liver, kidney and epidydimal fat pad increased along with the body weight and then decreased in the 12 months. Plasma total lipid increased with age and it decreased significantly when P/S ratio of dietary fatty acid was high. In creased with age and it decreased significantly when P/S ratio of dietary fatty acid was high. In creasing n-3 fatty acid intake in each P/S ratio resulted in lower plasma total lipid although was not statistically significant. The amount of plasma total cholesterol increased at 6 months, but decreased at 12 months. In case of 1, 12 months, increasing P/S ratio significantly plasma total cholesterol and LDL-cholesterol were decreased and hepatic cholesterol was increased, VLDL-HDL-cholesterol did not changed. The n-6/n-3 ratio did not affect any of theses. The amount of plasma triglyceride and VLDL-triglyceride increased at 6 month then decreased. When the rats consumed higher amount of n-3 fatty acid in each P/S ratio, their plasma triglyceride and hepatic triglyceride increased at 1, 12months.