• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.07a
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• pp.456-459
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• 2000

Thin films of vanadium oxide(V$O_x$) have been deposited by r.f. magnetron sputtering from $V_2$$O_5$ prget in gas mixture of argon and oxygen. Crystal structure, surface morphology, chemical composition and bonding properties of films in-situ annealed in $O_2$ ambient with various heat-treatment conditions are characterized through XRD, SEM, AES, RBS and FTIR measurements. The filrns annealed below 200 $^{\circ}C$are amorphous, and those annealed above 30$0^{\circ}C$ are polycrystalline. The growth of grains and the transition of vanadium oxide into the higher oxide have been obsenred with increasing the annealing temperature and time. The increase of O/V ratio with increasing the annealing temperature and time is attributed to the diffusion of oxygen and the partial filling of oxygen vacancies. It is observed that the oxygen atoms located on the V-0 plane of $V_2$$O_5$ layer participate more readily in the oxidation process.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.11a
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• pp.126-127
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• 2008

The effects annealing conditions on the electrical conductions of SOI substrate were studied. The reversible change of resistance and carrier concentration in accordance with the annealing temperature were observed for the first time in SOI substrate. The thermal donors due to interstitial oxygen atoms contribute the change of resistance and carrier concentration. Final1y, we show that the furnace annelaing at $500^{\circ}C$ at final heat treatment stage is effective for eliminate the thermal donor effects in SOI substrate.

• JSTS:Journal of Semiconductor Technology and Science
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• v.15 no.2
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• pp.249-254
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• 2015

Solution-derived amorphous indium-gallium-zinc oxide (a-IGZO) thin-film-transistor (TFTs) were developed using a microwave irradiation treatment at low process temperature below $300^{\circ}C$. Compared to conventional furnace-annealing, the a-IGZO TFTs annealed by microwave irradiation exhibited better electrical characteristics in terms of field effect mobility, SS, and on/off current ratio, although the annealing temperature of microwave irradiation is much lower than that of furnace annealing. The microwave irradiated TFTs showed a smaller $V_{th}$ shift under the positive gate bias stress (PGBS) and negative gate bias stress (NGBS) tests owing to a lower ratio of oxygen vacancies, surface absorbed oxygen molecules, and reduced interface trapping in a-IGZO. Therefore, microwave irradiation is very promising to low-temperature process.

• Progress in Superconductivity and Cryogenics
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• v.5 no.1
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• pp.31-34
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• 2003

Bi-2223 superconducting wires with 55 filaments were fabricated by stacking, drawing process with different heat-treatment histories. Two kinds of powders were prepared. One was pre-annealed at 760-820 $^{\circ}C$ and low oxygen partial pressure, and the other was only calcined state. Before rolling process, round wires were pre-annealed at 760 -820 $^{\circ}C$ and in a low oxygen partial pressure. We confirmed that pre-annealing step was to transform Bi-2212 orthorhombic structure from Bi-2212 tetragonal structure and to reduce the formation of second phases at superconducting wire. However Bi-2223 phases were formed at higher pre-annealing temperature. Bi-2223 conductor was needed frequently annealing at low temperature because pre-annealing at precursor powder brought about decrease in workability. We could achieve highest Je of 6500 A/$\textrm{cm}^2$ at the tape using Bi-2212 orthorhombic phase by introduced slightly overheating at the 1st sintering process.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.25 no.9
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• pp.677-680
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• 2012

The dependency of annealing temperature on the electrical performances in amorphous silicon-zinc-tin-oxide thin film transistors (SZTO-TFT) has been investigated. The SZTO channel layers were prepared by using radio frequency (RF) magnetron sputtering method with different annealing treatment. The field effect mobility (${\mu}_{FE}$) increased and threshold voltage ($V_{th}$) shifted to negative direction with increasing annealing temperature. As a result, oxygen vacancies generated in SZTO channel layer with increasing annealing temperature resulted in negative shift in $V_{th}$ and increase in on-current.

• Korean Journal of Materials Research
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• v.18 no.9
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• pp.486-491
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• 2008

The effect of annealing treatment conditions on the interfacial adhesion energy between electrolessplated Ni film and polyimide substrate was evaluated using a $180^{\circ}$ peel test. Measured peel strength values are $26.9{\pm}0.8,\;22.4{\pm}0.8,\;21.9{\pm}1.5,\;23.1{\pm}1.3,\;16.1{\pm}2.0\;and\;14.3{\pm}1.3g/mm$ for annealing treatment times during 0, 1, 3, 5, 10, and 20 hours, respectively, at $200^{\circ}C$ in ambient environment. XPS and AES analysis results on peeled surfaces clearly reveal that the peeling occurs cohesively inside polyimide. This implies a degradation of polyimide structure due to oxygen diffusion through interface between Ni and polyimide, which is also closely related to the decrease in the interfacial adhesion energy due to thermal treatment in ambient conditions.

• Journal of Soil and Groundwater Environment
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• v.12 no.3
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• pp.29-35
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• 2007

Titanium was oxidized with oxygen plasma and calcinated with rapid thermal annealing for degradation of humic acid dissolved in water. Titania photocatalytic plate was produced by titanium surface oxidized with oxygen plasma by Plasma Enhanced Chemical Vapor Deposition (PECVD). RF-power and deposition condition is controlled under 100 W, 150 W, 300 W and 500 W. Treatment time was controlled by 5 min and 10 min. The film properties were evaluated by the X-ray Photoelectron Spectroscopy (XPS) and X-Ray Diffraction (XRD). From the experimental results, we found the optimal condition of titania film which exhibited good performance. Moreover photocatalytic capacity was about twice better than thermal spray titania film, and also as good as titania powder.

• Journal of the Korean institute of surface engineering
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• v.50 no.2
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• pp.125-130
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• 2017

ZnO nanowires were synthesized and annealed at various temperatures of $500-800^{\circ}C$ in oxygen atmosphere to investigate hydrogen gas sensing properties. The diameter and length of the synthesized ZnO nanowires were approximately 50-100 nm and a few $10s\;{\mu}m$, respectively. $H_2$ gas sensing performance of the ZnO nanowires sensor was measured with electrical resistance changes caused by $H_2$ gas with a concentration of 0.1-2.0%. The response of ZnO nanowires at room temperature to 2.0% $H_2$ gas is found to be two times enhanced by annealing process in $O_2$ atmosphere at $800^{\circ}C$. In the current study, the effect of heat treatment in $O_2$ atmosphere on the gas sensing performance of ZnO nanowires was studied. And the underlying mechanism for the sensing improvement of the ZnO nanowires was also discussed.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.29A no.7
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• pp.73-81
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• 1992

We have investigated the thermal reaction property and the oxygen behavior of TiN/Ti/Si structure after different hear treatments using x-ray photoelectron spectroscopy and cross-sectional transmission electron microscopy measurements. During the heat treatment in N$_2$ amibient, the considerable amount of oxygen atoms incorporates into TiN/Ti/Si Structures. It is found that oxygen atoms pile up at the top surface of TiN and TiN/Ti interface, forming a compound of TiO$_2$ above $600^{\circ}C$. Inside the TiN film, the oxygen content increases as the annealing temperature increases, mostly TiO and Ti$_2$O$_3$ rather than thermodynamically stable TiO$_2$. Above the annealing temperature of 55$0^{\circ}C$, the TiSi$_2$ formation has initiated. One thing to note is that a severe blistering is observed in the sample annealed at $600^{\circ}C$, due to (1) the difference of thermal expansion coefficient between TiN and Si` (2) the compressive stress induced by the volume reduction caused by the Ti-Silicide grain while elevating temperatures.

• Journal of Advanced Marine Engineering and Technology
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• v.39 no.5
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• pp.536-541
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• 2015

Copper has been used extensively as an electric wire or as a base material in various types of machineries owing to its good electrical and thermal conductivity and good fabricating property, as well as its good corrosion resistance compared to iron. Furthermore, the copper-nickel alloy has significant corrosion resistance in severely corrosive environments. Although, cupro-nickel alloy shows better corrosion resistance than the brass and bronze series, this alloy also corroded in severely corrosive environments, including aggressive chloride ions, dissolved oxygen, and condition of fast flowing seawater. In this study, and annealing treatment at various annealing temperatures was carried out on the cupro-nickel (Cu-10%Ni) alloy, and the effects of annealing were investigated using electrochemical methods, such as measuring the polarization and impedance behaviors under flowing seawater conditions. The corrosion resistance increased by annealing compared to non heat treatment in the absence of flowing seawater. In particular, the sample annealed at $200^{\circ}C$ exhibited the best corrosion resistance. The impedance in the presence of flowing seawater showed higher values than in the absence of flowing seawater. Furthermore, the highest impedances was observed in the sample annealed at $800^{\circ}C$, irrespective of the present of flowing seawater. Consequently, the corrosion resistance of cupro-nickel (Cu-10%Ni) alloy in a severely corrosive environment can be improved somewhat by annealing.