Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference (한국전기전자재료학회:학술대회논문집)

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
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Abnormal behaviors in electrical conductions of SOI substrate by thermal annealing temperature

열처리에 따른 SOI 기판에서의 전기전도특성의 이상 거동

  • Cho, Won-Ju (Department of Electronic materials engineering Kwangwoon Univ.)
  • 조원주 (광운대학교 전자재료공학과)
  • Published : 2008.11.06
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Abstract

The effects annealing conditions on the electrical conductions of SOI substrate were studied. The reversible change of resistance and carrier concentration in accordance with the annealing temperature were observed for the first time in SOI substrate. The thermal donors due to interstitial oxygen atoms contribute the change of resistance and carrier concentration. Final1y, we show that the furnace annelaing at $500^{\circ}C$ at final heat treatment stage is effective for eliminate the thermal donor effects in SOI substrate.

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