• Journal of Korean Society for Atmospheric Environment
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• v.16 no.4
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• pp.399-408
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• 2000

This study evaluated the SO2 adsorption characteristics using a continous moving bed system. Natural manganese oxide (NMO) reaction condition such as L/D the starting time of the NMO feed, feed rate, and flow rate of simulated flue gas, and NMO size were tested. The results showed that optimum L/D was 1.0 in this moving bed system. The higher the feeding rate was the higher the SO2 removal efficiency was and the higher the flow rate of simulated flue gas was the shorter the time to reach the euqilibirum concentration was. The final SO2 con-centration when it reaches the equilibrium concentration was not affected by the starting time of the NMO feed.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.31A no.4
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• pp.63-69
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• 1994

The Ultrahigh Vacuum Electron Cyclotron Resonance Chemical Vapor Deposition(UHV-ECRCVD) system whose base pressure is 1${\times}10^{9}$ torr has been constructed. In-situ cleaning prior to the epitaxial growth was carried out at 56$0^{\circ}C$ by ECR generated uniform hydrogen plasma whose density is $10^{10}/cm{3}$. The natural oxide was effectively removed without damage by applying positive DC bias(+10V) to the substrate. RHEED(Reflection High Energy Electron Diffraction) analysis has been used to confirm the removal of the surgace oxide and the streaky 2$\times$1 reconstruction of the Si surface, and the suppression of the substrate damage is anaylized by X-TEM(cross-sectional Transmission Electron Microscopy). Surface cleaning technique by ECR hydrogen plasma confirmed good quality epitaxial growth at low temperature.

• Journal of the Korean Ceramic Society
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• v.39 no.7
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• pp.693-698
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• 2002

Reaction-Bonded Silicon Carbide (RBSC) Ceramics were fabricated which satisfies the maximum packing density of silicon carbide skeleton in the green compacts. Such a high packing density induced incomplete infiltration during reaction-sintering; forms linear void around the interface of large alpha silicon carbide powders. During reaction-sintering, the limited extraction and entrapped gas induced by residue oxide was considered to be a reason of linear void formation. In order to improve infiltration behavior in the highly packed preform, the pre-treatment methods for residue oxide removal were proposed.

• Journal of the Semiconductor & Display Technology
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• v.3 no.4
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• pp.45-49
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• 2004

We examined large particles and filter size effects of Central Chemical Supplying (CCS) system for STI-CMP on Light Point Defects (LPDs) after polishing. As manufacturing process recently gets thinner below 0.1 um line width, it is very important to keep down post-CMP micro-scratch and LPDs in case of STI-CMP. Therefore, we must control the size distribution of large particles in a slurry. With optimization of final filter size, CCS system is one of the solutions for this issue. The oxide and nitride CMP tests were accomplished using nano-ceria slurries made by ourselves. The number of large particles in a slurry and the number of LPDs on the wafer surface after CMP were reduced with decrease of the final filter size. Oxide removal rates slightly changed according to the final filter size, showing the good performance of self-made nano ceria slurries.

• Journal of Welding and Joining
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• v.32 no.1
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• pp.108-111
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• 2014

Low arc weldability of aluminum alloy is enhanced by applying variable polarity TIG and the result is theoretically investigated to figure out the mechanism. Conventionally, it is well known fact that DCEP (reverse polarity) arc is effective on aluminum welding. The reason is due to oxide layer removal by plasma ion bombardment and therefore it is named as cleaning effect. Another fact of polarity characteristic is that DCEN shows higher heat input efficiency therefore conventional variable polarity arc used to apply DCEP portion as small as possible. However, higher DCEP portion shows bigger weldment in this research and it is explained by adopting a theory of arc concentration on oxide layer with tunneling effect which was not clearly mentioned before in several variable polarity TIG welding research. Disagreement between variable polarity TIG welding result and conventional arc polarity theory is rationally explained for the first time with help of electron emission theory.

• Applied Science and Convergence Technology
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• v.25 no.6
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• pp.128-132
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• 2016

We investigated the effect of Ar ion sputtering on the surface electronic structure of indium tin oxide (ITO) using X-ray and ultraviolet photoelectron spectroscopy (XPS and UPS) measurements with increasing Ar ion sputtering time. XPS measurements revealed that surface contamination on ITO was rapidly removed by Ar ion sputtering for 10 s. UPS measurements showed that the work function of ITO increased by 0.2 eV after Ar ion sputtering for 10 s. This increase in work function was attributed to the removal of surface contamination, which formed a positive interface dipole relative to the ITO substrate. However, further Ar ion sputtering did not change the work function of ITO although the surface stoichiometry of ITO did change. Therefore, removing the surface contamination is critical for increasing the work function of ITO, and Ar ion sputtering for a short time (about 10 s) can efficiently remove surface contamination.

• Journal of Korean Society for Atmospheric Environment
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• v.10 no.2
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• pp.83-89
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• 1994

The reaction of sulfur dioxide with cupric oxide was investigated over a temperature range of 300-50$0^{\circ}C$, and the regenaration reaction was studied using cupric sulfate and hydrogen over a temperature range of 240-35$0^{\circ}C$ in a fixed bed reactor. The experimental results showed that the efficiencies for elimination and regenaration reactions were maximum at 45$0^{\circ}C$ and at 30$0^{\circ}C$ respectively. In both cases the experimental data could be interpreted properly by shrinking unreacted core model while the chemical reaction is rate controlling step. The reaction rate constants were determined to be 24.88 exp(-6724/RT) (cm/min) for elimination reaction, and 0.0165 exp(-2047/RT)(cm/min ) for regeneration reaction.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.28A no.5
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• pp.380-386
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• 1991

Hydrogen plasma-assisted epitaxial(PAE) growth of GaAs/Si and GaAs/Ge/Si with Ge buffer layer has been investigated. By means of photoluminescence, Nomarski microscopu, and $\alpha$-step, it could be known that GaAs on Si with Ge buffer layer has better crystalline quality than GaAs on Si without Ge buffer layer. The stoichiometry of GaAs layer on Si was confirmed by the depth profile of Auger electron spectroscope (AES). Also the native oxide(SiO$_2$) layer on Si substrate was plama-etched and the removal of the oxide layer was confirmed by AES. Photoluminescence peak wavelength of GaAs/Ge/Si with Ge buffer of 1\ulcorner thickness and GaAs growth rate of 160$\AA$/min was 8700$\AA$and FWHM was 12$\AA$.

• Journal of Industrial Technology
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• v.27 no.A
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• pp.19-24
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• 2007

This research was done for possible treatment of impermeable surfaces rainwater runoff containing heavy metal ions by manganese oxide coated on polypropylene support. Manganese oxide was coated by Birnessite Coating Methods(BCM)and the coating analyzed by SEM and FT-IR techniques. The efficiency of heavy metal ions adsorption was also assessed via both batch and column tests. Adsorption efficiencies of Cd, Zn, Cu, and Pb were 99.4%, 98.9%, 96.7%, and over 95.7%, respectively. The adsorption progress pattern reveals quite fast adsorption at initial periods of treatment and change to slower rates at later times.

• KIEE International Transactions on Electrophysics and Applications
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• v.3C no.1
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• pp.28-32
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• 2003

In this paper, we have studied the in-situ end point detection (EPD) for direct chemical mechanical polishing (CMP) of shallow trench isolation (STI) structures without the reverse moat etch process. In this case, we applied a high selectivity $1n (HSS) that improves the silicon oxide removal rate and maximizes oxide to nitride selectivity Quite reproducible EPD results were obtained, and the wafer-to-wafer thickness variation was significantly reduced compared with the conventional predetermined polishing time method without EPD. Therefore, it is possible to achieve a global planarization without the complicated reverse moat etch process. As a result, the STI-CMP process can be simplified and improved using the new EPD method.