Browse > Article
http://dx.doi.org/10.4191/KCERS.2002.39.7.693

Silicon Melt Infiltration of Reaction-Bonded Silicon Carbide  

신현익 (한국과학기술연구원 나노재료연구센터)
김주선 (한국과학기술연구원 나노재료연구센터)
이종호 (한국과학기술연구원 나노재료연구센터)
김긍호 (한국과학기술연구원 나노재료연구센터)
송휴섭 (한국과학기술연구원 나노재료연구센터)
이해원 (한국과학기술연구원 나노재료연구센터)
Publication Information
Journal of the Korean Ceramic Society / v.39, no.7, 2002 , pp. 693-698 More about this Journal
Abstract
Reaction-Bonded Silicon Carbide (RBSC) Ceramics were fabricated which satisfies the maximum packing density of silicon carbide skeleton in the green compacts. Such a high packing density induced incomplete infiltration during reaction-sintering; forms linear void around the interface of large alpha silicon carbide powders. During reaction-sintering, the limited extraction and entrapped gas induced by residue oxide was considered to be a reason of linear void formation. In order to improve infiltration behavior in the highly packed preform, the pre-treatment methods for residue oxide removal were proposed.
Keywords
Reaction-bonded silicon carbide; Thermoset molding; Infiltration;
Citations & Related Records
Times Cited By KSCI : 2  (Citation Analysis)
연도 인용수 순위
1 Microstructure and Mechanical Properties of RB-SiC/MoSi₂Composite /
[ C. B. Lim;T. Yano;T. Iseki ] / J. Mater. Sci.   DOI
2 /
[ R. M. German ] / Particle Packing Characteristics
3 The Fabrication and Properties of Self Bonded Silicon Carbide Bodies /
[ C. W. Forrest;P. Kennedy;J. V. Shennan ] / Special Ceramics
4 High-temperature Time-dependent Strength of an Si/SiC Composite /
[ G. G. Trantina;R. L. Mehan ] / J. Am. Ceram. Soc.   DOI
5 The Effect of Input Gas Ratio on the Growth Behavior of Chemical Vapor Deposited SiC Films /
[ J. H. Oh;B. J. Oh;D. J. Choi ] / J. Mater. Sci.   DOI   ScienceOn
6 Thermal Cycling of Siliconized-SiC at High Temperatures /
[ P. A. Lessing;A. W. Erickson;D.C . Kunerth ] / J. Mater. Sci.   DOI   ScienceOn
7 Microstructural Characterization of REFEL(reaction-bonded) Silicon Carbides /
[ G. R. Sawyer;T. F. Page ] / J. Mater. Sci.   DOI   ScienceOn
8 Toughened Silicon Composites-process and Preliminary Properties /
[ K. L. Luthra;R. N. Singh;M. K. Brun ] / Am. Ceram. Soc. Bull.
9 Low-cost Melt-formed Siliconized Silicon Carbide Radiant Tube Materials /
[ T. Darroudi;R. E. Tressler;M. R. Kasprzyk ] / J. Am. Ceram. Soc.   DOI
10 Fabrication of Near-net-shaped Reaction-bonded Silicon Carbide Tubes by Thermoset Molding and Reaction Infiltration of Silicon Melt /
[ H. W. Jun;H. W. Lee;H. S. Song;H. I. Shin;J. S. Kim;J. W. Ha ] / J. Ceram. Proc. Res.
11 Transport of Fine-grained β-SiC in SiC/Liquid Si System /
[ C. B. Lim;T. Iseki ] / Adv. Ceram. Mater.   DOI
12 Reaction-based Processing Methods for Ceramic-matrix Composites /
[ Y. M. Chiang;J. S. Haggerty;R. P. Messner;C. Demetry ] / Am. Ceram. Soc. Bull.
13 Reaction Mechanism in Carbon-liquid Silicon Systems at Elevated Temperatures /
[ R. Pampuch;E. Walasek;J. Bialoskorski ] / Ceram. Int.   DOI   ScienceOn
14 Development of SiC-Si Composites with Fine-grained SiC Microstructures /
[ M. Wilhelm;M. Kornfeld;W. Wruss ] / J. Eu. Ceram. Soc.   DOI   ScienceOn
15 Recrystallization and Phase Transformation in Reaction-sintered SiC /
[ S. S. Shinozaki;J. E. Noakes;H. Sato ] / J. Am. Ceram. Soc.
16 Microstructural Evolution in Reaction-bonded Silicon Carbide /
[ J. N. Ness;T. F. Page ] / J. Mater. Sci.   DOI   ScienceOn
17 β-SiC Formation Mechanisms in Si Melt-C-SiC System /
[ K. S. Seo;S. W. Park;H. S. Song ] / J. Kor. Ceram. Soc.   과학기술학회마을
18 Mechanism of Reactions in the Sil+Cf System and the Self-propagating High-temperature Synthesis of Silicon Carbide /
[ R. Pampuch;J. Bialoskorski;E. Walasek ] / Ceram. Int.   DOI   ScienceOn
19 Influence of Grain Size, Free Silicon Content and Temperature on the Strength and Toughness of Reaction-bonded Silicon Carbide /
[ O. P. Chakrabarti;S. Ghosh;J. Mukerji ] / Ceramics International   DOI   ScienceOn
20 Effect of α-Silicon Carbide Particle Size in Reaction Bonded Silicon Carbide /
[ I. S. Han;J. H. Yang;H. S. Jung ] / J. Kor. Ceram. Soc.   과학기술학회마을
21 Wetting of SiC, Si₃N₄and Carbon by Si and Binary Si Alloys /
[ J. J. Whalen;A. J. Anderson ] / J. Am. Ceram. Soc.   DOI   ScienceOn