• Bulletin of the Korean Chemical Society
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• v.8 no.4
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• pp.225-230
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• 1987

The redox properties of 2-mercaptopyridine N-oxide (mpno) and its oxovanadium complex, $VO (mpno)_2$ have been studied by the use of polarography and cyclic voltammetry. The radical anion of mpno is generated in acetone and is adsorbed to the electrode to form an adsorption wave at -0.21 V vs Ag/AgCl electrode. The normal wave appeared at -0.50 V is attributed to the formation of radical anion. The $VO (mpno)_2$ exhibits one oxidation wave at +0.57 V, and two reduction waves at -1.07 V and -1.76 V vs. Ag/AgCl electrode; the oxidation is fully reversible one-electron process ($VO (mpno)_2\;{\leftrightarrow}\;VO(mpno)_2^+ + e).$ The reduction wave at -1.07 V is quasireversible and is arised from the formation of $VO (mpno)_2^-.$ The second reduction wave at -1.76 V is irreversible and this reduction process consists of two one-electron steps. The sulfur containing ligands seem to enhance the stability of lower oxidation state of vanadium while the oxygen or nitrogen donor of the ligands stabilize the higher oxidation state of vanadium when comparisons are made among several oxovanadium complexes.

• Journal of Electrochemical Science and Technology
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• v.14 no.3
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• pp.222-230
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• 2023

Capacitive deionization of saline water is one of the most promising water purification technologies due to its high energy efficiency and cost-effectiveness. This study synthesizes porous carbon composites composed of reduced graphene oxide (rGO) and activated carbon (AC) with various rGO/AC ratios using a facile chemical method. Surface characterization of the rGO/AC composites shows a successful chemical reduction of GO to rGO and incorporation of AC into rGO. The optimized rGO/AC composite electrode exhibits a specific capacitance of ~243 F g^-1 in a 1 M NaCl solution. The galvanostatic charging-discharging test shows excellent reversible cycles, with a slight shortening in the cycle time from the ~260^th to the 530^th cycle. Various monovalent sodium salts (NaF, NaCl, NaBr, and NaI) and chloride salts (LiCl, NaCl, KCl, and CsCl) are deionized with the rGO/AC electrode pairs at a cell voltage of 1.3 V. Among them, NaI shows the highest specific adsorption capacity of ~22.2 mg g^-1. Detailed surface characterization and electrochemical analyses are conducted.

• Current Photovoltaic Research
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• v.10 no.1
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• pp.28-32
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• 2022

We investigated the optical and electrical characteristics of ITO/Ag/ITO (IAI) 3-layer thin films prepared by using RF/DC sputtering. To measure the thickness of all thin film samples, we used scanning electron microscopy. As a function of Ag thickness we characterized the optical transmittance and sheet resistance of the IAI samples by using UV-Visible spectroscopy and Hall measurement system, respectively. While the thickness of both ITO thin films in the 3-layered IAI samples were fixed at 50 nm, we varied Ag layer thickness in the range of 0 nm to 11 nm. The optical transmittance and sheet resistance of the 3-layered IAI thin films were found to vary strongly with the thickness of Ag film in the ITO (50 nm)/Ag(t₀)/ITO (50 nm) thin film. For the best transparent conducting oxide (TCO) electrode, we obtained a 3-layered ITO (50 nm)/Ag (t₀ = 8.5 nm)/ITO (50 nm) that showed an avrage optical transmittance, AVT = 90.12% in the visible light region of 380 nm to 780 nm and the sheet resistance, R_□ = 7.24 Ω/□.

• 한국신재생에너지학회:학술대회논문집
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• 2007.06a
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• pp.335-338
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• 2007

Cost effectiveness is an important parameter for producing DSSCs as compared to the widely used conventional silicon based solar cells. A fluorine-doped tin oxide (FTO) substrate coated with a catalytic amount of platinum is used as counter electrode in dye-sensitized solar cell. Carbonaceous materials are quite attractive to replace platinum due to their high electronic conductivity, corrosion resistance towards $I_{2}$, good catalytic effect and low cost. In this paper, the unit DSSCs with Pt and CNT as a counter electrode were connected in series-parallel externally, then the current-voltage curves were investigated to find out the connection characteristics of the DSSC with CNT counter electrode. The connection characteristics of the DSSC with CNT counter electrode is superior to that of the DSSC with Pt counter electrode. And a parallel connection of the DSSC with CNT counter electrode has higher efficiency than a series connection of that.

• Journal of Electrochemical Science and Technology
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• v.6 no.3
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• pp.81-87
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• 2015

This study introduces a facile strategy to prepare metal oxide/conducting polymer nanocomposites that may have promising applications in energy storage devices. Ploy aniline/nano wire manganese dioxide (PANI/NwMnO₂) was synthesized by cyclic voltammetry on glassy carbon electrode. Morphology and structure of the composite, pure PANI, MnO₂ nanowires were fully characterized using XRD and SEM analysis. Electrochemical studies shows excellent synergistic effect between PANI and MnO₂ nanowires which results in its capacitance increase and cycle stability against PANI electrode. Specific capacitances of PANI/NwMnO₂ and PANI were 456 and 190 F/g respectively. The electrochemical performance of electrodes studied using cyclic voltammetry, Galvanostatic charge/discharge and impedance spectroscopy.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.07a
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• pp.749-752
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• 2001

Very fine cobalt oxide xerogel and ambigel powder were prepared using a unique solution chemistry associated with the sol-gel process. The mesoporous structure of the initial gel is maintained by removing fluid under conditions where the capillary forces that result extraction are either low or no existent, are either low or nonexistent. Controlling both the pore and solid architecture on the nanoscale offers a strategy for the design of supercapacitor. The results materials determine by using electrode that mixed ketjen black and PVdF. But CoO$\_$x/ have the low voltage, so we experimente to change electrolyte and various concentration.

• Proceedings of the KIEE Conference
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• 2001.07c
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• pp.1718-1720
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• 2001

The route of surge arrester connection is very important because bends and kinds of leads increase the impedance to lightning surges and tend to nullify the effectiveness of a grounding electrode conductor. There is a need to know how effective installation of lightning surge arresters is made in order to control voltage and to absorb energy at high lightning currents. The effectiveness of a grounding conductor and bonding for 18[kV] metal oxide distribution line arresters was experimentally investigated with lightning and oscillating impulse voltages.

• Proceedings of the IEEK Conference
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• 1999.11a
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• pp.883-886
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• 1999

We deposited tungsten gate electrode on gate SiO$_2$by thermal LPCVD with WF$_{6}$, SiH$_4$ and H$_2$. The resistivity was ~10$\mu$Ωcm and exhibited good adhesion ability on oxide when the temperature was higher than 40$0^{\circ}C$. We find that, however, both the low-field current and the charge-trapping characteristics were inferior to the control devices. The oxide degradation by fluorine during the tungsten deposition must be minimized to use the tungsten as alternative gate electrode.e.

• ETRI Journal
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• v.17 no.4
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• pp.1-12
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• 1996

A novel body-tied silicon-on-insulator(SOI) n-channel metal-oxide-semiconductor field-effect transistor with grounded body electrode named GBSOI nMOSFET has been developed by wafer bonding and etch-back technology. It has no floating body effect such as kink phenomena on the drain current curves, single-transistor latch and drain current overshoot inherent in a normal SOI device with floating body. We have characterized the interface trap density, kink phenomena on the drain current ($I_{DS}-V_{DS}$) curves, substrate resistance effect on the $I_{DS}-V_{DS}$ curves, subthreshold current characteristics and single transistor latch of these transistors. We have confirmed that the GBSOI structure is suitable for high-speed and low-voltage VLSI circuits.

• Journal of Sensor Science and Technology
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• v.16 no.3
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• pp.229-233
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• 2007

The indium tin oxide (ITO) films were deposited on CR39 substrate using DC magnetron sputtering. The ITO thin films deposited at room temperature because CR39 substrate its glass-transition temperature is $130^{\circ}C$. The ITO thin films used bottom and top electrode and for organic thin film transparent transistors (OTFTs). The ITO thin film electrodes electrical properties and optical transparency properties in the visible wavelength range (300-800 nm) strongly dependent on volume of oxygen percent. For the optimum resistivity and transparency of the ITO thin film electrode achieved with a 75 W plasma power, 10 % volume of oxygen and a 27 nm/min deposition rate. Above 85 % transparency in the visible wavelength range (300-800 nm) measured without post annealing process and a low resistivity value $9.83{\times}10^{-4}{\Omega}cm$ was measured thickness of 300 nm. All fabrication process of ITO thin films did not exceed $80^{\circ}C$.