• Transactions on Electrical and Electronic Materials
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• v.14 no.2
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• pp.59-62
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• 2013

At an infra-red (IR) wavelength of 1,064 nm, a diode-pumped Q-switched $Nd:YVO_4$ laser was used for the direct patterning of various transparent conductive oxide (TCO) thin films on glass substrate. With various laser beam conditions, the laser ablation results showed that the indium tin oxide (ITO) film was removed completely. In contrast, zinc oxide (ZnO) film was not etched for any laser beam conditions and indium gallium zinc oxide (IGZO) was only ablated with a low scanning speed. The difference in laser ablation is thought to be due to the crystal structures and the coefficient of thermal expansion (CTE) of ITO, IGZO, and ZnO. The width of the laser-patterned grooves was dependent on the film materials, the repetition rate, and the scanning speed of the laser beam.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.20 no.7
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• pp.569-574
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• 2007

In this paper, the reliability (NBTI degradation: ${\Delta}V_{th}$) and device characteristic of nano-scale PMOSFET with plasma nitrided oxide (PNO) is characterized in depth by comparing those with thermally nitrided oxide (TNO). PNO case shows the reduction of gate leakage current and interface state density compared to TNO with no change of the $I_{D.sat}\;vs.\;I_{OFF}$ characteristics. Gate oxide capacitance (Cox) of PNO is larger than TNO and it increases as the N concentration increases in PNO. PNO also shows the improvement of NBTI characteristics because the nitrogen peak layer is located near the $Poly/SiO_2$ interface. However, if the nitrogen concentration in PNO oxide increases, threshold voltage degradation $({\Delta}V_{th})$ becomes more degraded by NBT stress due to the enhanced generation of the fixed oxide charges.

• Proceedings of the Korean Institute of Resources Recycling Conference
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• 2005.11a
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• pp.47-58
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• 2005

From the world wide globalization of iron oxide industy, the global trade in iron oxide is changed rapidly and the production of iron oxide is increasing in China, currently. Iron oxide have a broad range of applications from construction materials to medical area. Therefore, it is expected that nanoparticulate iron oxides have many applications, too. There is a series of interesting applications are introduced, but in entirely different fields as they are known from conventional iron oxide.

• Bulletin of the Korean Chemical Society
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• v.13 no.6
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• pp.605-612
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• 1992

Chromium oxide/zirconia catalysts were prepared by dry impregnation of powdered $Zr(OH)_4$ with ($NH_4$)$_2$CrO$_4$aqueous solution. The characterization of prepared catalysts was performed using FTIR, XPS, XRD and DTA methods, and by the measurement of surface area. The addition of chromium oxide to zirconia shifted the transitions of $ZrO_2$ from amorphous to tetragonal phase and from tetragonal to monoclinic phase to higher temperature due to the strong interaction between chromium oxide and zirconia, and the specific surface area of catalysts increased in proportion to the chromium oxide content. Since the $ZrO_2$ stabilizes supported chromium oxide, chromium oxide was well dispersed on the surface of zirconia, and ${\alpha}$-$Cr_2O_3$ was observed only at the calcination temperature above 1173 K. Upon the addition of only small amount of chromium oxide (1 wt% Cr) to $ZrO_2$, both the acidity and acid strength of catalyst increased remarkably, showing the presence of two kinds of acid sites on the surface of $CrO_x$/$ZrO_4$-Bronsted and Lewis.

• Journal of Hydrogen and New Energy
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• v.29 no.6
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• pp.627-634
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• 2018

Gallium-based liquid metal, e.g., eutectic gallium-indium (EGaIn), is highly attractive as an electrode material for flexible and stretchable devices. On the liquid metal, oxide layer is spontaneously formed, which has a wide band-gap, and therefore is electrically insulating. In this paper, we fabricate a capacitor based on eutectic gallium-indium (EGaIn) liquid metal and investigate its cyclic voltammetry (CV) behavior. The EGaIn capacitor is composed of two EGaIn electrodes and electrolyte. CV curves reveal that the EGaIn capacitor shows the behavior of electric double-layer capacitors (EDLC), where the oxide layers on the EGaIn electrodes serves as the dielectric layer of EDLC. The oxide thicker than the spontaneously-formed native oxide decreases the capacitance of the EGaIn capacitor, due to increased voltage loss across the oxide layer. The EGaIn capacitor without oxide layer exhibits unstable CV curves during the repeated cycles, where self-repair characteristic of the oxide was observed. Finally, the electrolyte concentration is optimized by comparing the CV curves at various electrolyte concentrations.

• Journal of Sensor Science and Technology
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• v.28 no.2
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• pp.76-80
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• 2019

The characteristics of a titanium oxide layer prepared using a plasma electrolytic oxidation (PEO) process were investigated, using an extended gate ion sensitive field effect transistor (EG-ISFET) to confirm the layer's capability to react with hydrogen ions. The surface morphology and element distribution of the PEO-processed titanium oxide were observed and analyzed using field-emission scanning-electron microscopy (FE-SEM) and energy-distribution spectroscopy (EDS). The titanium oxide prepared by the PEO process was utilized as a hydrogen-ion sensing membrane and an extended gate insulator. A commercially available n-channel enhancement MOS-FET (metal-oxide-semiconductor FET) played a role as a transducer. The responses of the PEO-processed titanium oxide to different pH solutions were analyzed. The output drain current was linearly related to the pH solutions in the range of pH 4 to pH 12. It was confirmed that the titanium-oxide layer prepared by the PEO process could feasibly be used as a hydrogen-ion-sensing membrane for EGFET measurements.

• Corrosion Science and Technology
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• v.20 no.3
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• pp.118-128
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• 2021

The oxide layer in samples taken from an irradiated Zr-2.5Nb pressure tube from a CANDU-PHWR reactor was analyzed using electron probe microanalysis (EPMA). The examined tube had been exposed to temperatures ranging from 264 to 306 ℃ and a neutron fluence of 8.9 × 10²¹ n/cm² (E > 1 MeV) for the maximum 10 effective full-power years in a nuclear power plant. Measuring oxide layer thickness generally employs optical microscopy. However, in this study, analysis of the oxide layer from the irradiated pressure tube components was undertaken through X-ray image mapping obtained using EPMA. The oxide layer characteristics were analyzed by X-ray image mapping with 256 × 256 pixels using EPMA. In addition, the slope of the oxide layer was measured for each location. A particular advantage of this study was that backscattered electrons and X-ray image mapping were obtained at a magnification of 9,000 when 20 kV volts and 30 uA of current were applied to radiation-shielded EPMA. The results of this study should usefully contribute to the study of the oxide layer properties of various types of metallic materials irradiated by high radiation in nuclear power plants.

• Journal of Surface Science and Engineering
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• v.55 no.2
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• pp.63-69
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• 2022

Preparing various types of thin films of oxide semiconductors is a promising approach to fabricate efficient photoanodes and photocathodes for hydrogen production via photoelectrochemical (PEC) water splitting. In this work, we investigate the feasibility of an efficient photocathode for PEC water reduction of a p-type oxide semiconductor cupric oxide (CuO) thin film prepared via a facile method combined with sputtering Cu metallic film on fluorine-doped thin oxide (FTO) coated glass substrate and subsequent thermal oxidation of the sputtered Cu metallic film in dry air. Characterization of the structural, optical, and PEC properties of the CuO thin film prepared at various Cu sputtering powers reveals that we can obtain an optimum CuO thin film as an efficient PEC photocathode at a Cu sputtering power of 60 W. The photocurrent density and the optimal photocurrent conversion efficiency for the optimum CuO thin film photocathode are found to be -0.3 mA/cm² and 0.09% at 0.35 V vs. RHE, respectively. These results provide a promising route to fabricating earth-abundant copper-oxide-based photoelectrode for sunlight-driven hydrogen generation using a facile method.

• Korean Journal of Environmental Agriculture
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• v.42 no.4
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• pp.418-426
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• 2023

This study focused on nitrous oxide, a major greenhouse gas produced in agricultural settings through bacterial nitrogen oxidation in aerobic soil. Nitrogen fertilizer in farmland is identified as a primary source of nitrous oxide. The importance of reducing excess nitrogen in soil to mitigate nitrous oxide production is well-known. The study investigated the use of liquefied pig manure as an alternative to urea fertilizer in conventional agriculture. Results showed a more than two-fold reduction in nitrous oxide emissions in pepper cultivation areas with liquefied pig manure compared to that with urea fertilizer. The population of Nitrosospira, a nitrous oxide-producing bacterium, decreased by over 10% with liquefied pig manure. Additionally, nirK and nosZ, which are related to the denitrification process, significantly increased in the urea fertilizer group, whereas levels in the liquefied pig manure group resembled those with no nitrogen treatment. In conclusion, the experiment confirmed that liquefied pig manure can serve as an eco-friendly nitrogen fertilizer, significantly reducing nitrous oxide production, a major contributor to the atmospheric greenhouse effect.

• Archives of Metallurgy and Materials
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• v.65 no.3
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• pp.1063-1067
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• 2020

Dynamic charge carrier transport behavior in the zirconium (Zr) oxide was investigated based on the frequency-dependent capacitance-voltage (C-V) and temperature-dependent current-voltage (I-V) measurements. The Zr oxide was formed on the ZIRLO and newly developed zirconium-based alloy (NDZ) by corrosion in the PWR-simulated loop at 360℃. The corrosion test for 90 days showed that the NDZ exhibits better corrosion resistance than ZIRLO alloy. Based on the C-V measurement, dielectric constant values for the Zr oxide was estimated to be 11.28 and 11.52 for the ZIRLO and NDZ. The capacitance difference between low and high frequency was larger in the ZIRLO than in the NDZ, which was attributed to more mobile electrical charge carriers in the oxide layer on the ZIRLO alloy. The current through the oxide layers on the ZIRLO increased more drastically with increasing temperature than on the NDZ, which indicating that more charge trap sites exist in the ZIRLO than in NDZ. Based on the dynamic charge carrier transport behavior, it was concluded that the electrical charge carrier transport within the oxide layers was closely related with the corrosion behavior of the Zr alloys.