• Title/Summary/Keyword: oxidation process

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Photocatalytic Oxidation of Free Cyanide Using UV LED (자외선 LED를 이용한 자유 시안의 광촉매 산화)

  • Kim, Seong Hee;Seol, Jeong Woo;Lee, Woo Chun;Lee, Sang-Woo;Kim, Soon-Oh
    • Journal of Korean Society of Environmental Engineers
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    • v.37 no.1
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    • pp.34-44
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    • 2015
  • This study was initiated to remove free cyanide from wastewater using the process of photocatalytic oxidation. UV lamp has been extensively used as a light source in conventional photocatalytic oxidation, but numerous drawbacks of UV lamp have been raised so far. Thus, this study focused on evaluating the applicability of UV LED as an alternative light source to overcome the drawbacks of UV lamp. Furthermore, the effects of diverse operational parameters on the performance of process were investigated. The results demonstrated the applicability of UV LED as a substitute of UV lamp. Also, the results show that the performance of process was improved by the increase in the number of UV LEDs used. To acquire economic feasibility as well as high efficacy, however, it is required to determine the optimum number of UV LED prior to practical implementation of the process. Among the three types of photocatalysts (anatase, rutile, and Degussa P25) tested, the Degussa P25 showed the greatest performance, and it was proven that the process was not improved as much as the Degussa P25 through simple mixing of anatase and rutile without any pretreatment. In addition, the removal efficiency of free cyanide appeared to be increased with the decrease in the particle size of $TiO_2$ photocatalyst. Besides, the process was enhanced with injection of oxygen which is considered as a major electron acceptor in the photocatalytic oxidation.

Small Molecular Organic Nonvolatile Memory Cells Fabricated with in Situ O2 Plasma Oxidation

  • Seo, Sung-Ho;Nam, Woo-Sik;Park, Jea-Gun
    • JSTS:Journal of Semiconductor Technology and Science
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    • v.8 no.1
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    • pp.40-45
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    • 2008
  • We developed small molecular organic nonvolatile $4F^2$ memory cells using metal layer evaporation followed by $O_2$ plasma oxidation. Our memory cells sandwich an upper ${\alpha}$-NPD layer, Al nanocrystals surrounded by $Al_2O_3$, and a bottom ${\alpha}$-NPD layer between top and bottom electrodes. Their nonvolatile memory characteristics are excellent: the $V_{th},\;V_p$ (program), $V_e$ (erase), memory margin ($I_{on}/I_{off}$), data retention time, and erase and program endurance were 2.6 V, 5.3 V, 8.5 V, ${\approx}1.5{\times}10^2,\;1{\times}10^5s$, and $1{\times}10^3$ cycles, respectively. They also demonstrated symmetrical current versus voltage characteristics and a reversible erase and program process, indicating potential for terabit-level nonvolatile memory.

Development of VLSI Process Simulator (반도체 공정 시뮬레이터 개발에 관한 연구)

  • 이경일;공성원;윤상호;이제희;원태영
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 1994.11a
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    • pp.40-45
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    • 1994
  • The TCAD(Technology Computer Aided Design) software tool is a popular name to be able to simulate the semiconductor process and device circuit. We have developed a two-dimensional TCAD software tool included an editor, parser, each process unit, and 2D, 3D graphic routine that is Integrated Environment. The initial grid for numerical analysis is automatically generated with the geometric series that use the user default(given) line and position separated with grid interval and the nodes corresponding to each mesh point stoic the all the possible attribute. Also, we made a data structure called PIF for input or output. Methods of ion implantation in this paper arc Monte Carlo, Gaussian Pearson and Dual-Pearson. Analytical model such as Gaussian, Pearson and Dual-Pearson were considered the multilayer structure and two-dimensional tilted implantation. We simuttaneously calculated the continuity equation of impurity and point defect in diffusion simulation. Oxidation process was simulated by analytical ERFC(Complementary Error Function) model for local oxidation.

Effect of $H_2O_2$ and Metals on The Sonochemical Decomposition of Humic Substances in Wastewater Effluent

  • Jung, Oh-Jun
    • Environmental Sciences Bulletin of The Korean Environmental Sciences Society
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    • v.10 no.S_3
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    • pp.127-137
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    • 2001
  • The sonochemical Process has been applied as a treatment method and was investigated its effect on the decomposition of humic substances(HS). The reaction kinetics and mechanisms in the Process of sonochemical treatment for humic substances(HS) in wastewater have also been discussed. It was observed that the metal ions such as Fe(II) and Mn(II) showed catalytic effects, while Al(III), Ca(II), and Mg(II) had inhibitory effects on the decomposition of humic substances in sonochemical reaction with hydrogen peroxide. Experimental results also showed factors such as hydrogen peroxide dose affected the formation of disinfection by-products. Two trihalomethanes, chloroform and dichlorobromomethane were formed as major disinfection by-products during chlorination. The mechanism of radical reaction is controlled by an oxidation process. The radicals are so reactive that most of them are consumed by HS radicals and hydroxyl radicals can be acted on organic solutes by hydroxyl addition, hydrogen abstraction, and electron transfer. The depolymerization and the radical reaction of HS radicals appear to occur simultaneously. The final steps of the reaction are the conversion of organic acids to carbon dioxide.

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Degradation of 2,3-dichlorophenol by a Photo-Fenton Process with Continuous Pump-Feeding of Hydrogen Peroxide (동력펌프주입식 광펜톤시스템에 의한 2,3-디염화페놀 분해특성 연구)

  • Kim, Il-Kyu
    • Journal of Power System Engineering
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    • v.18 no.6
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    • pp.84-90
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    • 2014
  • The degradation of 2,3-dichlorophenol(2,3-diCP) by various advanced oxidation systems with continuous feeding of hydrogen peroxide including the ultraviolet/hydrogen peroxide, the Fenton and the photo-Fenton process has been conducted. The highest removal efficiency for 2,3-diCP in the aqueous phase was obtained by the photo-Fenton process among the advanced oxidation systems. In the photo-Fenton process, The removal efficiency of 2,3-diCP decreased with increasing pH in the range of 3 to 6, and it decreased with increasing initial concentration. As the intermediates of 2,3-diCP by photo-fenton reaction, 3,4-chlorocatechol and 2,3-dichlorohydroquinone were detected, thus the degradation pathways were proposed.

Acceleration of reduction of U3O8 to UO2 by particle rearrangement in a vertically-shaken bed

  • Byoungjin So;Ju Ho Lee;Jae Won Lee;Yung Zun Cho
    • Nuclear Engineering and Technology
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    • v.56 no.11
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    • pp.4837-4842
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    • 2024
  • The stabilization technology for damaged nuclear fuels requires physically-stable pellets, so powders that are used for the process must have high sinterability. Due to safety limitations in H2 concentration, fuel materials are reduced with high gas flow rates or for long times in cyclic oxidation and reduction process. We attempted to shorten the reaction time by shaking the powder reactor vertically. This method reduced the reaction time for the reduction process by two-thirds compared to that required in the static condition. The shaking process had a negligible effect on the quality of the powder. Therefore, this method can be applied to the reduction processes that require large volumes and long reaction times.

A Study on Implanted and Annealed Antimony Profiles in Amorphous and Single Crystalline Silicon Using 10~50 keV Energy Bombardment (비정질 및 단결정 실리콘에서 10~50 keV 에너지로 주입된 안티몬 이온의 분포와 열적인 거동에 따른 연구)

  • Jung, Won-Chae
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.28 no.11
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    • pp.683-689
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    • 2015
  • For the formation of $N^+$ doping, the antimony ions are mainly used for the fabrication of a BJT (bipolar junction transistor), CMOS (complementary metal oxide semiconductor), FET (field effect transistor) and BiCMOS (bipolar and complementary metal oxide semiconductor) process integration. Antimony is a heavy element and has relatively a low diffusion coefficient in silicon. Therefore, antimony is preferred as a candidate of ultra shallow junction for n type doping instead of arsenic implantation. Three-dimensional (3D) profiles of antimony are also compared one another from different tilt angles and incident energies under same dimensional conditions. The diffusion effect of antimony showed ORD (oxygen retarded diffusion) after thermal oxidation process. The interfacial effect of a $SiO_2/Si$ is influenced antimony diffusion and showed segregation effects during the oxidation process. The surface sputtering effect of antimony must be considered due to its heavy mass in the case of low energy and high dose conditions. The range of antimony implanted in amorphous and crystalline silicon are compared each other and its data and profiles also showed and explained after thermal annealing under inert $N_2$ gas and dry oxidation.

A Study on the Limiting Factors in Wastewater Treatment by Contact Oxidation Process (접촉담화공정에 의한 폐수처이에 있어서의 제한요권에 관한 연구)

  • 황상용;손종열;우완기
    • Journal of environmental and Sanitary engineering
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    • v.5 no.2
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    • pp.45-52
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    • 1990
  • This study is to discuss limiting factors influenced on the removal efficiency of organic materials investigated using the polypropyrene biofilter which appropriate to attach micro-organism in order to apply the contact oxidation proce,:5. The results obtained in the experiment were as follows : 1. In the range o: pH 4.0~ 12.0 was obtained the removal efficiency of COD higher than 85% It was proved that variation of pH(4.0 ~ 12.0) was nothing to do with the removal efficiency of substrate in continuous reactor. 2. Temperature to obtain removal efficiency of COD higher than 85% was $10^{\circ}$ ~$40^{\circ}$. Removal efficiency of COD was no less than those at high temperature if MLVSS concentration was maintained 8,000~ 15,000 m/1. 3. In the continuous reactor, the volumetric loading of COD for removal efficiency higher than 95% had to be 0.5~1.5 kg COD/.d below. And then the HRT was Bhrs. 4. In comparison with the conventional activate sludge process, the contact oxidation process was excellent in removal efficiency, sludge production rate and maintenance.

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Method of Solving Oxidation Problem in Copper Pillar Bump Packaging Technology of High Density IC (고집적 소자용 구리기둥범프 패키징에서 산화문제를 해결하기 위한 방법에 대한 연구)

  • Jung, One-Chul;Hong, Sang-Jeen;Soh, Dae-Wha;Hwang, Jae-Ryong;Cho, Il-Hwan
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.23 no.12
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    • pp.919-923
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    • 2010
  • Copper pillar tin bump (CPTB) was developed for high density chip interconnect technology. Copper pillar tin bumps that have $100{\mu}m$ pitch were introduced with fabrication process using a KM -1250 dry film photoresist (DFR), copper electroplating method and Sn electro-less plating method. Mechanical shear strength measurements were introduced to characterize the bonding process as a function of thermo-compression. Shear strength has maximum value with $330^{\circ}C$ and 500 N thenno-compression process. Through the simulation work, it was proved that when the copper pillar tin bump decreased in its size, it was largely affected by the copper oxidation.

Recovery of Silver from the Spent Solution Generated from Electrochemical Oxidation of Radioactive Wastes (放射性 폐기물의 전기화학적 분해 폐액으로부터 銀의 回收)

  • 문제권;정종훈;오원진;이일희
    • Resources Recycling
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    • v.10 no.5
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    • pp.22-28
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    • 2001
  • Recovery of silver in the spent solution generated from MEO(Mediated Electrochemical Oxidation) process, which is a process to decompose radioactive organic mixed wastes at low temperature, was performed using chemical method. Silver nitrate in 5M nitric acid solution could be completely recovered as AgCl by using 1% excess of the stoichiometric HCl equivalents. Then, AgCl was transformed to Ag metal by reduction reaction with hydrogen peroxide under alkaline media. The optimum pH for the reduction to silver metal was found to be in the range of 12.8∼13.0.

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