• 통합자연과학논문집
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• 제3권3호
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• pp.153-156
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• 2010

Oxidation behaviors of porous silicon were investigated by the measurement of area of $SiO_2$ vibrational peaks in FT-IR spectra during thermal oxidation of porous silicon at corresponding temperatures. Visible photoluminescent porous silicon samples were obtained from an electrochemical etch of n-type silicon of resistivity between 1-10 ${\Omega}/cm$. The etching solution was prepared by adding an equal volume of pure ethanol to an aqueous solution of HF. The porous silicon was illuminated with a 300 W tungsten lamp for the duration of etch. Etching was carried out as a two-electrode galvanostatic procedure at applied current density of 200 $mA/cm^2$ for 5 min. The porosity of samples prepared was about 80%. After formation of porous silicon, the samples were thermally oxidized at $100^{\circ}C$, $200^{\circ}C$, $300^{\circ}C$, and $400^{\circ}C$, respectively. The growth rate of $SiO_2$ layer of porous silicon was investigated by using FT-IR spectroscopy. The effect of oxidation of porous silicon was presented.

• BMB Reports
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• 제47권11호
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• pp.609-618
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• 2014

DNA methylation at cytosines (5mC) is a major epigenetic modification involved in the regulation of multiple biological processes in mammals. How methylation is reversed was until recently poorly understood. The family of dioxygenases commonly known as Ten-eleven translocation (Tet) proteins are responsible for the oxidation of 5mC into three new forms, 5-hydroxymethylcytosine (5hmC), 5-formylcytosine (5fC) and 5-carboxylcytosine (5caC). Current models link Tet-mediated 5mC oxidation with active DNA demethylation. The higher oxidation products (5fC and 5caC) are recognized and excised by the DNA glycosylase TDG via the base excision repair pathway. Like DNA methyltransferases, Tet enzymes are important for embryonic development. We will examine the mechanism and biological significance of Tet-mediated 5mC oxidation in the context of pronuclear DNA demethylation in mouse early embryos. In contrast to its role in active demethylation in the germ cells and early embryo, a number of lines of evidence suggest that the intragenic 5hmC present in brain may act as a stable mark instead. This short review explores mechanistic aspects of TET oxidation activity, the impact Tet enzymes have on epigenome organization and their contribution to the regulation of early embryonic and neuronal development.

• 한국세라믹학회지
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• 제32권3호
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• pp.331-340
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• 1995

Microwave (Hybrid) Heating (MHH) was used to oxidize and sinter Al-Al2O3 powder mixture. For 25 v/o Al specimen and 35 v/o Al specimen, the total processing to produce low-shrinkage reaction bonded alumina was carried out within 1 hour even though conventional furnace process took more than 10 hours. Compared with conventional fast firing process, MHH process increased more than 40% oxidation at the same temperature, and these high oxidation rates were thought to be caused by the surface ohmic current on Al particles.

• 한국신재생에너지학회:학술대회논문집
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• 한국신재생에너지학회 2008년도 춘계학술대회 논문집
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• pp.5-8
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• 2008

SOFC (Solid oxide fuel cell) has an advantage in the term of fuel flexibility, comparing with other kinds of fuel cells. In SOFC and fuel reformer cooperation system, the reformate gas with the various $H_2$/CO ratios is delivered into the anode of SOFC. In this situation, electrochemical oxidation reactions of the reformate gas in the anode are complex and competitive. In this paper, the effects of the composition of $H_2$ and CO on the overall electrochemical oxidation at Ni-YSZ anode are studied by testing the open circuit voltage (OCV) and current-voltage characteristics of single cells.

• 한국응용과학기술학회지
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• 제7권2호
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• pp.47-53
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• 1990

The electrochemical oxidation behavior of p-cresol on platinum anode had been investigated by cyclic voltammetric method for the variation of concentration, scan rate of potential, temperature and pH of electrolyte. The oxidation potential of p-cresol was dependent on the electrolyte until the pH=11.5, but in basic solution over its, it was held at o.40V(vs. SCE). A diffusion was rate determining step of oxidation as irreversible reaction by the transfer atone electron. The current of peak was proportional to concentration of p-cresol until the 0.1N and optimum concentration was found to be about 0.1N. The activation energy was calculated for 5.8kcal/mol from the plot of log $I_l$ vs. 1/T.

• 한국전기전자재료학회논문지
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• 제17권1호
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• pp.21-26
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• 2004

Ultra-thin silicon dioxides were grown on p-type(100) oriented silicon employing rapid thermal dry oxidation technique at the temperature range of 850∼1050 $^{\circ}C$. The growth rate of the ultra-thin film was fitted well with tile model which was proposed recently by da Silva ＆ Stosic. The capacitance-voltage, current-voltage, characteristics were used to study the electrical properties of these thin oxides. The minimum interface state density around the midgap of the MOS capacitor having oxide thickness of 111.6 $\AA$ derived from the C-V curve was ranged from 6 to 10${\times}$10$^{10}$ /$\textrm{cm}^2$eV.

• 전자공학회논문지A
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• 제33A권7호
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• pp.149-155
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• 1996

A new technique wasdeveloped which obtains selectively the htick fully recessed oxidized porous silicon layer (OPSL) with good dielectric property. The porous silicon layer was ocnverted to thick fully recessed oxide (FRO) with 3-step (1${\mu}$m, 1.5${\mu}$m, 1.8${\mu}$m) by multi-step thermal oxidation (after 400$^{\circ}$C, 1 hour by dry oxidation, 700$^{\circ}$C, 1 hour and then 1100$^{\circ}$C, 1 hour by wet oxidation). The breakdwon field of the FRO was about 2.5MV/cm and the leakage current was several pA ~ 100 pA in the range of 0 of 90 pF. The progress of oxidation of a porous silicon layer was studied by examining the infrared abosrption spectra. The refractive index (1.51) of the fRO, which was measured by ellipsometer, was comparable to that of the thermally grown silicon dioxide (1.46). The etching rate (1600${\AA}$/min) of the FRO was also almost equal to that of the thermal oxide.

• 대한전자공학회:학술대회논문집
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• 대한전자공학회 1999년도 하계종합학술대회 논문집
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• pp.243-246
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• 1999

We studied the MOSFET characteristics and the hot-carrier reliability with the sidewall spacer composition and the post gate oxidation thickness in 0.20${\mu}{\textrm}{m}$ gate length transistor. The MOSFET with NO(Nitride＋Oxide) sidewall spacer exhibits the large degradation of hot-carrier lifetime because there is no buffering oxide against nitride stress. When the post gate oxidation is skipped, the hot-carrier lifetime is improved, but GIDL (Gate Induced Drain Leakage) current is also increased.

• 공업화학
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• 제1권1호
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• pp.44-51
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• 1990

백금전극에 의한 페놀의 전기화학적 산화거동을 순환 전류전압법에 의하여 연구 검토하였다. 페놀의 초기산화전위는 산성용액에서는 전해질용액의 액성에 크게 영향을 받으나, 염기성용액에서는 0.33-0.40V범위로 거의 일정한 산화전위를 나타내었고, 페놀의 농도변화에 따른 전기화학적 산화의 최적농도는 0.IN부근에서 가장 유리하였다. 그리고 주사속도변화에 따른 조사에서 페놀 산화반응은 비가역적이고 확산이 이 반응을 지배한다.

• Journal of Electrochemical Science and Technology
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• 제5권3호
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• pp.82-86
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• 2014

This work presents the variation of formic acid oxidation on Pt depending on hydrodynamic condition using a rotating disk electrode. As the rotating speed increases, the oxidation rate of formic acid decreases under voltammetric and chronoamperometric measurements. The coverages of poison formed from formic acid during the chronoamperomertric investigations decrease when the rotating speed increases. As the roughness factor of Pt electrode surface increases, on the other hand, the current density of formic acid oxidation increases. These observations are discussed in terms of the tangential flow along Pt electrode surfaces generated by the rotating disk electrode, which reduces a contact time between formic acid and a Pt site, thus the formic acid adsorption.