• 한국정보디스플레이학회:학술대회논문집
• /
• 2000.01a
• /
• pp.215-216
• /
• 2000

We fabricated the thin-film transistors using organic semiconductor, pentacene, on $SiN_x$, gate insulator. X-ray diffraction experiments were performed for the sample after heat-treatments at higher temperatures. We confirmed that we obtained "thin-film phase" from the condition used here. From the electrical measurements, we also confirmed that no charges are accumulated at the interface between organic and insulating layer, and FET characteristics of the organic FET using pentacene was discussed.

• Bulletin of the Korean Chemical Society
• /
• v.33 no.5
• /
• pp.1659-1663
• /
• 2012

New semiconducting polymer, poly[1,4-bis(($E$)-2-(5-bromo-3-dodecylthiophen-2-yl)vinyl)benzene], was designed, synthesized and characterized. The structure of polymer was confirmed by $^1H$-NMR, IR and elemental analysis. The polymer was soluble in specific organic solvent. The weight-average molecular weights (MW) of polymer was found to be 11,000 with polydispersity of 1.82. UV-Visible absorption spectrum showed the maximum absorption at 428 nm (in solution) and 438 nm (in film). The highest occupied molecular orbital (HOMO) energy of the polymer is -5.36 eV by measuring cyclic voltammetry (CV). A solutionprocessed polymer thin film transistor device shows a mobility of $8.59{\pm}10^{-4}\;cm^2\;V^{-1}\;s^{-1}$, an on/off current ratio of $2.0{\times}10^4$.

• 한국정보디스플레이학회:학술대회논문집
• /
• 2007.08a
• /
• pp.730-732
• /
• 2007

We fabricated a coplanar type organic thin-film transistors using ink-jet printed silver source/drain electrodes and ${\alpha},{\omega}-dihexylquaterthiophene$ (DH4T) which is an active layer. Use of ink-jet printed silver nanoparticle-based metal electrode assists the energetic mismatch with p-type organic semiconductor via modification of their interfacial properties to enable ohmic contact formation.

• 한국정보디스플레이학회:학술대회논문집
• /
• 2007.08a
• /
• pp.151-154
• /
• 2007

We demonstrate a novel selective patterning process of a semiconducting polymer for channel regions to fabricate an array of organic thin-film transistors (OTFTs). This process is applicable for various organic films over large area. A reflective liquid crystal display based on the OTFT array was produced using the selective patterning through a wettability control.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.30 no.1
• /
• pp.23-26
• /
• 2017

Mo doped carbon (C:Mo) thin films were fabricated with various Mo target power densities by unbalanced magnetron sputtering (UBM). The effects of target power density on the surface, structural, and electrical properties of C:Mo films were investigated. UBM sputtered C:Mo thin films exhibited smooth and uniform surfaces. However, the rms surface roughness of C:Mo films were increased with the increase of target power density. Also, the resistivity value of C:Mo film as electrical properties was decreased with the increase of target power density. From the performance of organic thin filml transistor using conductive C:Mo gate electrode, the carrier mobility, threshold voltage, and on/off ratio of drain current (Ion/Ioff) showed $0.16cm^2/V{\cdot}s$, -6.0 V, and $7.7{\times}10^4$, respectively.

• Journal of the Korean Society for Precision Engineering
• /
• v.25 no.8
• /
• pp.17-20
• /
• 2008

• Proceedings of the IEEK Conference
• /
• 2000.06b
• /
• pp.44-47
• /
• 2000

본 연구는 α-Si:H TFT(Amorphous Silicon Thin Film Transistor)를 대체 할 펜타센을 활성층으로 사용하는 박막 트랜지스터를 제작에 관한 것이다. 유기 박막 트랜지스터는 유기발광소자와 함께 유연한 디스플레이에 응용된다. 펜타센 박막 트랜지스터의 제작은 채널 길이 25㎛, 70㎛, 소스, 드레인, 게이트 전극으로 Au을 lift off 공정으로 제작하였으며, 펜타센은 OMBD(Organic Molecular Beam Deposition)로 기판온도를 80℃로 유지하여 증착하였다. 제작된 소자로부터 트랜지스터 전류-전압 특성곡선을 측정하였고, 게이트에 의한 채널의 전도도가 조절됨을 확인하였다. 그리고, 전달특성곡선으로부터 문턱전압과 전계효과 이동도를 추출하였다.

• Proceedings of the IEEK Conference
• /
• 2002.06b
• /
• pp.253-256
• /
• 2002

In Currently, OTFTS are actively studied around the world because they are expected to create new novel applications, which can not be implemented by the conventional Si semiconductor, due to the unique characteristics of organic materials. In this paper, the hole field effect mobility has been improved to the level of a-Si TFTs with 0.3cm2/V.sec, simply applying the surface treatment process on the gate with organic molecules. In addition, the model has been suggested and the temperature dependence of hole mobility analyzed.

• Electrical & Electronic Materials
• /
• v.17 no.7
• /
• pp.5-11
• /
• 2004

유기박막 트랜지스터 (Organic Thin Film Transistor : OTFT)에 관한 연구는 1980년 이후부터 시작되었으나 근래에 들어 전 세계적으로 본격적인 연구가 진행되고 있다. 이는 OTFT가 넓은 면적 위에 소자를 제작할 경우, 낮은 공정 온도를 필요로 하는 경우, 또한 구부림이 가능해야 하는 경우, 특히 저가 공정이 필요한 경우 등에 가장 적합한 것으로 생각되고 있기 때문이다. 이러한 OTFT는 미래의 정보표시 장치의 필수적인 요소들과 집적화가 매우 용이하다는 장점을 가지고 있다. 소재의 특성상 유기 발광 다이오드에 쓰이는 발광 유기물과 같은 유기 반도체가 OTFT의 제작에 사용 가능하므로 증착 공정, 물리적 화학적 성질이 매우 유사하다.(중략)

• Proceedings of the KIEE Conference
• /
• 2009.07a
• /
• pp.1349_1350
• /
• 2009

Thin films of pp(ST-Co-VA) were fabricated by plasma deposition polymerization (PVDPM) technique. Properties of the plasma polymerized pp(ST-Co-VA) thin films were investigated for application to semiconductor device as insulator. Thickness, dielectric property, composition of the pp(ST-Co-VA) thin films were investigated considering the relationship with preparation condition such as gas pressure and deposition time. In order to verify the possibility of application to organic thin film transistor, a pentacene thin film was deposited on the pp(ST-Co-VA) insulator by vacuum thermal evaporation technique. Crystalline property of the pentacene thin film was investigated by XRD and SEM, FT-IR. Surface properties at the pp(ST-Co-VA)/pentacene interface was investigated by contact angle measurement. The pp(ST-Co-VA) thin film showed a high-k (k=4.6) and good interface characteristic with pentacene semiconducting layer, which indicates that it would be a promising material for organic thin film transistor (OTFT) application.