Journal of the Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회논문지)

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
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Characteristics of Sputtering Mo Doped Carbon Films and the Application as the Gate Electrode in Organic Thin Film Transistor

스퍼터링 Mo 도핑 탄소박막의 특성과 유기박막트랜지스터의 게이트 전극으로 응용

  • Kim, Young Gon (Department of Electronics, Chosun College of Science and Technology) ;
  • Park, Yong Seob (Department of Electronics, Chosun College of Science and Technology)
  • Received : 2016.11.14
  • Accepted : 2016.11.23
  • Published : 2017.01.01
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Abstract

Mo doped carbon (C:Mo) thin films were fabricated with various Mo target power densities by unbalanced magnetron sputtering (UBM). The effects of target power density on the surface, structural, and electrical properties of C:Mo films were investigated. UBM sputtered C:Mo thin films exhibited smooth and uniform surfaces. However, the rms surface roughness of C:Mo films were increased with the increase of target power density. Also, the resistivity value of C:Mo film as electrical properties was decreased with the increase of target power density. From the performance of organic thin filml transistor using conductive C:Mo gate electrode, the carrier mobility, threshold voltage, and on/off ratio of drain current (Ion/Ioff) showed $0.16cm^2/V{\cdot}s$, -6.0 V, and $7.7{\times}10^4$, respectively.

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References

  1. M. Vilkman, T. Ruotsalainen, K. Solehmainen, E. Jansson, and J. H. Keinanen, Electronics, 5, 1 (2016). [DOI: 10.3390/electronics5010002]
  2. F. F. Vidor, T. Meyers, and U. Hilleringmann, Electronics, 4, 480 (2015). [DOI: https://doi.org/10.3390/electronics4030480]
  3. I. H. Campbell, P. S. Davids, J. P. Ferraris, T. W. Haglar, C. M. Heller, A. Saxena, and D. L. Smith, Synthetic Metals, 80, 105 (1996). [DOI: https://doi.org/10.1016/S0379-6779(96)03689-2]
  4. N. R. Tu and C. Kao, J. Appl. Phys., 85, 7267 (1999). [DOI: https://doi.org/10.1063/1.370543]
  5. W. A. Schoonveld, J. Vrijmoeth, and T. M. Klapwijk, Appl. Phys. Lett., 73, 3884 (1998). [DOI: https://doi.org/10.1063/1.122924]
  6. C. M. Hwller, I. H. Campbell, D. L. Smith, N. N. Barashkov, and J. P. Ferraris, J. Appl. Phys., 81, 3227 (1997). [DOI: https://doi.org/10.1063/1.364154]
  7. J. H. Schoen, Ch. Kloc, T. Siegrist, J. Laquindanum, and H. E. Katz, Organic Electronics, 2, 165 (2001). [DOI: https://doi.org/10.1016/S1566-1199(01)00022-2]
  8. J. H. Schoen, Ch. Kloc, and B. Batlogg, Synthetic Metals, 115, 75, (2000). [DOI: https://doi.org/10.1016/S0379-6779(00)00348-9]
  9. J. Robertson, Mater. Sci. Eng., R37, 129 (2002). [DOI: https://doi.org/10.1016/S0927-796X(02)00005-0]
  10. H. Dimigen, H. Hubsch, and R. Memming, Appl. Phys. Lett., 50, 1056 (1987). [DOI: https://doi.org/10.1063/1.97968]
  11. K. Bewilogua, C. V. Cooper, C. Specht, J. Schroder, R. Wittorf, and M. Grischke, Surf. Coat. Technol., 127, 224 (2000). [DOI: https://doi.org/10.1016/S0257-8972(00)00666-6]
  12. V. Kulikovsky, P. Bohac, F. Franc, A. Deineka, V. Vorlicek, and L. Jastrabik, Diamond and Relat. Mater., 10, 1076 (2001). [DOI: https://doi.org/10.1016/S0925-9635(00)00525-2]
  13. A. Grill, Surf. Coat. Technol., 94, 507 (1997). [DOI: https://doi.org/10.1016/S0257-8972(97)00458-1]
  14. A. Czyzniewski, Thin Solid Films, 433, 180 (2003). [DOI: https://doi.org/10.1016/S0040-6090(03)00324-9]
  15. G. Horowitz, Adv. Mater., 10, 365 (1998). [DOI: https://doi.org/10.1002/(SICI)1521-4095(199803)10:5<365::AID-ADMA365>3.0.CO;2-U]