• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2006년도 6th International Meeting on Information Display
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• pp.966-969
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• 2006

An optical model based on the optical thin-film theory is derived to calculate the output radiance of small molecules organic light-emitting diodes (OLEDs). We have designed the high efficiency OLEDs using the reflectance phase control of dielectric layers. It is found that OLED with a single $TiO_2$ dielectric layer is a good candidate to enhance the outcoupling efficiency and increase the color purity.

• 한국지반환경공학회 논문집
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• 제2권3호
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• pp.17-35
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• 2001

본 연구에서는 자연점토에 납, 구리, 아연, 카드뮴의 단일 흡착 시 온도변화에 따른 흙의 구성성분별 흡착거동을 살펴보기 위해 혼합 흡착-연속추출법(combined adsorption-sequential extraction analysis, CASA)을 사용하였다. 실험결과 납과 구리의 경우 약 50%이상의 분배가 탄산염 형태로 나타났고, 카드뮴의 경우 약 80%이상의 분배가 이온교환 형태로 나타났다. 아연의 경우 $25^{\circ}C$이하의 온도에서는 이온교환 형태로의 분배가 약 60%로 나타났고, $40^{\circ}C$이상의 온도에서는 탄산염 형태로의 분배가 50%이상으로 나타났다. 흙의 각 구성성분에 대한 흡착용량의 온도에 따른 영향은 철.망간 산화물과 유기물 형태에서 주로 발생하는 것으로 나타났다. 또한 이온교환 형태를 제외한 모든 형태에 대한 중금속들의 흡착 반응은 온도의 증가에 따라 흡착량이 증가하는 흡열반응(${\Delta}H^0$ >0)인 것으로 나타났다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2012년도 제42회 동계 정기 학술대회 초록집
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• pp.100-101
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• 2012

The plasma damage free and room temperature processedthin film deposition technology is essential for realization of various next generation organic microelectronic devices such as flexible AMOLED display, flexible OLED lighting, and organic photovoltaic cells because characteristics of fragile organic materials in the plasma process and low glass transition temperatures (Tg) of polymer substrate. In case of directly deposition of metal oxide thin films (including transparent conductive oxide (TCO) and amorphous oxide semiconductor (AOS)) on the organic layers, plasma damages against to the organic materials is fatal. This damage is believed to be originated mainly from high energy energetic particles during the sputtering process such as negative oxygen ions, reflected neutrals by reflection of plasma background gas at the target surface, sputtered atoms, bulk plasma ions, and secondary electrons. To solve this problem, we developed the NBAS (Neutral Beam Assisted Sputtering) process as a plasma damage free and room temperature processed sputtering technology. As a result, electro-optical properties of NBAS processed ITO thin film showed resistivity of $4.0{\times}10^{-4}{\Omega}{\cdot}m$ and high transmittance (>90% at 550 nm) with nano- crystalline structure at room temperature process. Furthermore, in the experiment result of directly deposition of TCO top anode on the inverted structure OLED cell, it is verified that NBAS TCO deposition process does not damages to the underlying organic layers. In case of deposition of transparent conductive oxide (TCO) thin film on the plastic polymer substrate, the room temperature processed sputtering coating of high quality TCO thin film is required. During the sputtering process with higher density plasma, the energetic particles contribute self supplying of activation & crystallization energy without any additional heating and post-annealing and forminga high quality TCO thin film. However, negative oxygen ions which generated from sputteringtarget surface by electron attachment are accelerated to high energy by induced cathode self-bias. Thus the high energy negative oxygen ions can lead to critical physical bombardment damages to forming oxide thin film and this effect does not recover in room temperature process without post thermal annealing. To salve the inherent limitation of plasma sputtering, we have been developed the Magnetic Field Shielded Sputtering (MFSS) process as the high quality oxide thin film deposition process at room temperature. The MFSS process is effectively eliminate or suppress the negative oxygen ions bombardment damage by the plasma limiter which composed permanent magnet array. As a result, electro-optical properties of MFSS processed ITO thin film (resistivity $3.9{\times}10^{-4}{\Omega}{\cdot}cm$, transmittance 95% at 550 nm) have approachedthose of a high temperature DC magnetron sputtering (DMS) ITO thin film were. Also, AOS (a-IGZO) TFTs fabricated by MFSS process without higher temperature post annealing showed very comparable electrical performance with those by DMS process with $400^{\circ}C$ post annealing. They are important to note that the bombardment of a negative oxygen ion which is accelerated by dc self-bias during rf sputtering could degrade the electrical performance of ITO electrodes and a-IGZO TFTs. Finally, we found that reduction of damage from the high energy negative oxygen ions bombardment drives improvement of crystalline structure in the ITO thin film and suppression of the sub-gab states in a-IGZO semiconductor thin film. For realization of organic flexible electronic devices based on plastic substrates, gas barrier coatings are required to prevent the permeation of water and oxygen because organic materials are highly susceptible to water and oxygen. In particular, high efficiency flexible AMOLEDs needs an extremely low water vapor transition rate (WVTR) of $1{\times}10^{-6}gm^{-2}day^{-1}$. The key factor in high quality inorganic gas barrier formation for achieving the very low WVTR required (under ${\sim}10^{-6}gm^{-2}day^{-1}$) is the suppression of nano-sized defect sites and gas diffusion pathways among the grain boundaries. For formation of high quality single inorganic gas barrier layer, we developed high density nano-structured Al2O3 single gas barrier layer usinga NBAS process. The NBAS process can continuously change crystalline structures from an amorphous phase to a nano- crystalline phase with various grain sizes in a single inorganic thin film. As a result, the water vapor transmission rates (WVTR) of the NBAS processed $Al_2O_3$ gas barrier film have improved order of magnitude compared with that of conventional $Al_2O_3$ layers made by the RF magnetron sputteringprocess under the same sputtering conditions; the WVTR of the NBAS processed $Al_2O_3$ gas barrier film was about $5{\times}10^{-6}g/m^2/day$ by just single layer.

• 웰빙융합연구
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• 제6권2호
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• pp.33-37
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• 2023

Purpose: Since 2013, marine dumping of wastewater has been banned, and research on eco-friendly and efficient land treatment has emerged. This study compared and tested changes in biogas production and anaerobic process efficiency depending on whether or not enzyme pretreatment was performed during anaerobic digestion from single-phase and two-phase to medium-temperature. Research design, data and methodology: The total sugar, direct sugar, pH, and acidity before and after fermentation were analyzed by G/C by anaerobic fermentation of the liquor wastewater, food wastewater 1, and food wastewater 2 at 30℃ for 67 hours, and the amount of methane gas generated was analyzed by balloon volume. Results: It was found that stable organic acid concentration and pH were found in the enzyme-treated food wastewater 2, and the amount of methane gas generated was also increased. Conclusions: When anaerobic digestion of the liquor wastewater and the food wastewater together, the performance of enzyme pretreatment resulted in increased digestive efficiency. It will be the basic data that can contribute to carbon neutrality and greenhouse gas reduction by increasing the production of biogas.

• 한국실내디자인학회:학술대회논문집
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• 한국실내디자인학회 2008년도 춘계학술발표대회 논문집
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• pp.163-168
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• 2008

In a today, our concerns have been changed from a single material to relation, communication and time. The human life made up of science, technology, philosophy and art of the modern society can decide whoerness by connecting or replacing a comprehensive and many kinds. This one is exhibited in interior actively. The space of the pluralistic world is sustained by not simple and fixed relation but complex and flexible relation. And it is shown as an undecided phenomenon by effecting and modifying each other. In here, the boundary has a phase of undecided relation but at the same time it can make possibility to be abundant to infinity. The purpose of our study with considering the uncertainty of the boundary is to solve the discord of between division and unify of modern architecture space and suggest new way to be mediation and to occupy independent area.

• Bulletin of the Korean Chemical Society
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• 제18권12호
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• pp.1249-1256
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• 1997

Single phase La1-xSrxCoO3 (x≤0.2) was synthesized as a uniform sized 100 nm particulates with relatively high surface area of 20-30 m2/g, at low temperature (≥600 ℃), from a polymeric gel precursors prepared by using poly(vinyl alcohol) as homogenizer. No minor phase developed during the crystallization when polymer/metal mole ratio was higher than 3. As the polymer/metal mole ratio was raised in the gel, the amount of carbonaceous residues in the amorphous solid precursor prepared by heating the gel at 300 ℃ increased. Most of the residues were eliminated by exothermic thermal decomposition around 400 ℃. The amount of residual carbon (less than 1%) left in the crystalline La1-xSrxCoO3 decreased as more polymer was used, eliminating detrimental effect which might be posed by using large amount of organic homogenizer. The crystal structure of La1-xSrxCoO3 synthesized at temperature lower than 800 ℃ was observed to be shifted from rhombohedral to more symmetric cubic. The structure shifted back to rhombohedral as the cubic sample was annealed at 1000 ℃.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2015년도 제49회 하계 정기학술대회 초록집
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• pp.157-157
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• 2015

Recently, the growing interest in organic microelectronic devices including OLEDs has led to an increasing amount of research into their many potential applications in the area of flexible electronic devices based on plastic substrates. However, these organic devices require a gas barrier coating to prevent the permeation of water and oxygen because organic materials are highly susceptible to water and oxygen. In particular, high efficiency OLEDs require an extremely low water vapor transition rate (WVTR) of $1{\times}10^{-6}g/m^2day$. The Key factor in high quality inorganic gas barrier formation for achieving the very low WVTR required ($1{\times}10^{-6}g/m^2day$) is the suppression of defect sites and gas diffusion pathways between grain boundaries. In this study NBAS process was introduced to deposit enhanced film density single gas barrier layer with a low WVTR. Fig. 1. shows a schematic illustration of the NBAS apparatus. The NBAS process was used for the $Al_2O_3$ nano-crystal structure films deposition, as shown in Fig. 1. The NBAS system is based on the conventional RF magnetron sputtering and it has the electron cyclotron resonance (ECR) plasma source and metal reflector. $Ar^+$ ion in the ECR plasma can be accelerated into the plasma sheath between the plasma and metal reflector, which are then neutralized mainly by Auger neutralization. The neutral beam energy is controlled by the metal reflector bias. The controllable neutral beam energy can continuously change crystalline structures from an amorphous phase to nanocrystal phase of various grain sizes. The $Al_2O_3$ films can be high film density by controllable Auger neutral beam energy. we developed $Al_2O_3$ high dense barrier layer using NBAS process. We can verified that NBAS process effect can lead to formation of high density nano-crystal structure barrier layer. As a result, Fig. 2. shows that the NBAS processed $Al_2O_3$ high dense barrier layer shows excellent WVTR property as a under $2{\times}10^{-5}g/m^2day$ in the single barrier layer of 100nm thickness. Therefore, the NBAS processed $Al_2O_3$ high dense barrier layer is very suitable in the high efficiency OLED application.

• 한국초전도저온공학회:학술대회논문집
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• 한국초전도저온공학회 2003년도 추계학술대회 논문집
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• pp.83-86
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• 2003

YBa$_2$Cu$_3$$O_{7-x}$ thin films for coated conductor application were deposited on a MgO single crystalline substrate by a metal organic chemical vapor deposition (MOCVD) system of a vertical type using a single liquid source. The film uniformity was enhanced by controlling the gas shower head structure, the distance between the shower head and substrate, and the rotation of the substrate. The source mole ratio of Y(thd)$_3$: Ba(thd)$_2$: Cu(thd)$_2$ was changed for obtaining stoichiometric film. The phase formation, crystal orientation, surface morphology and film composition were investigated with different source mole ratios, and the critical temperature (T$_{c}$) was measured.red.

• Journal of Pharmaceutical Investigation
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• 제35권1호
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• pp.51-55
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• 2005

A high-performance liquid chromatographic method was employed for the determination of bumetanide in human plasma. After addition of internal standard (IS, naproxen) and acidification of the plasma with 1 M hydrochloric acid, the drug and IS were extracted into dichloromethane. The organic phase was back-extracted into 1 M sodium bicarbonate solution and 50 ${\mu}l$ of the aqueous phase was injected onto a reversed-phase C18 column with a mobile phase consisting of methanol: water: glacial acetic acid = 65 : 35 : 1. The samples were detected utilizing a fluorescence detector (excitation wavelength 235 nm, emission wavelength 405 nm). The method was specific and validated with a lower limit of 5 ng/mL. Intra- and inter-day precision and accuracy were acceptable for all quality control samples including the lower limit of quantification. The applicability of the method was demonstrated by analysis of plasma after oral administration of a single 2 mg dose to 24 healthy subjects. From the plasma bumetanide concentration vs. time curves, the mean AUC was $246.5{\pm}73.8\;ng{\cdot}hr/mL$ and $C_{max}$ of $132.1{\pm}40.9$ ng/mL reached 1.2 hr after administration. The mean biological half-life of burnet ani de was $1.1{\pm}0.2$hr. Based on the results, this simple and validated assay method could readily be used in any pharmacokinetic or bioequivalence studies using humans.

• 한국전기전자재료학회논문지
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• 제27권4호
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• pp.226-231
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• 2014

Thin thermistor films of solutions with nickel and manganese oxides were prepared by metal-organic decomposition (MOD). The structural properties of the thin films were investigated as a function of annealing temperature. Field emission scanning electron microscope (FE-SEM) results indicated that the thin films had a thin thickness, smooth and dense surface. The crystallization temperature of $414.9^{\circ}C$ was confirmed from thermogavimetric-differential thermal analysis (TG-DTA) curve. A single phase of cubic spinel structure was obtained for the thin film annealed from $700^{\circ}C$ to $800^{\circ}C$, which was confirmed from the X-ray diffraction (XRD). From the selected area electron diffraction (SAED) in high resolution transmission electron microscope (HRTEM), the nano grains (2~3 nm) of spinel phase with (311) and (222) planes were detected for the thin film annealed at $500^{\circ}C$, which could be applicable to read-out integrated circuit (ROIC) substrate of the uncooled microbolometer with low processing temperature.