• Carbon letters
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• 제23권
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• pp.74-78
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• 2017

• 문화기술의 융합
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• 제9권3호
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• pp.593-599
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• 2023

질산니켈육수화물염(nickel(II) nitrate hexahydrate) 수용액을 공업용 펄프에 함침시킨 전구체를 이용하여 세라믹스 분말을 제조하는 간단한 액상 합성법으로 산화니켈(NiO) 나노입자를 성공적으로 합성하였다. 질산니켈육수화물염 수용액이 함침된 전구체의 미세구조를 주사전자현미경(SEM)으로 확인하였고, 전구체의 열처리온도 증가에 따라 생성되는 산화니켈(NiO) 입자의 결정구조 및 입자크기를 X선회절분석(XRD) 및 SEM으로 분석하였다. 그 결과 전구체의 유기물질이 완전하게 열분해 되는 온도는 495-500℃이며, 열처리 온도의 증가에 따라 생성되는 산화니켈 입자의 크기 및 결정성이 증가하는 것을 XRD, SEM 분석을 통하여 확인하였다. 500-800℃에서 각각 1시간 동안 열처리하여 얻어진 산화니켈 입자의 크기는 50-200nm였다. 열처리 온도 380℃에서 NiO 결정상이 형성되고, 800℃까지는 NiO 단일상만 존재하며, 열처리 온도가 높아짐에 따라 생성되는 입자의 크기가 커지고 있음을 XRD 및 SEM 분석으로 확인하였다.

• 문화기술의 융합
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• 제9권6호
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• pp.855-859
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• 2023

질산구리삼수화물염(copper(II) nitrate trihydrate) 수용액을 공업용 전분(starch)에 함침 시킨 전구체를 이용하여 산화구리(CuO) 나노 입자를 합성하였다. 주사전자현미경(SEM)을 통하여 질산구리삼수화물염 수용액이 함침된 전구체에 대한 구조를 분석하였고, 전구체에 대한 열처리 온도를 증가 시킴에 따라 생성되는 산화구리 입자의 입자 크기와 결정 구조를 X선회절분석법(XRD)과 주사전자현미경(SEM)으로 분석하였다. 분석 결과에 따르면, 전구체에서 유기물질이 완전히 열분해 되어지는 온도는 450-490℃이며, 열처리하는 온도가 증가함에 따라 생성되는 산화구리 입자의 크기와 결정성이 증가하는 것을 확인할 수 있었고, 또한 500-800℃에서 1시간씩 열처리하여 얻은 산화구리 입자의 크기는 100nm-2㎛인 것으로 나타났다. 하소 온도 400℃에서 산화구리 결정상이 형성되고, 800℃까지는 산화구리 단일상만 존재하며, 하소 온도의 증가에 따라 생성되는 입자의 크기가 커지는 것을 확인하였다.

• 한국분말재료학회지
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• 제18권1호
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• pp.35-40
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• 2011

LAS-system ceramic powder, spodumene ($Li_2O{\cdot}Al_2O_3{\cdot}4SiO_2$), was successfully synthesized by a chemical solution technique employing PVA(polyvinyl alcohol) as an organic carrier. The PVA content affected the microstructure of porous precursor gels and the crystalline development. The optimum PVA content contributed to homogeneous distribution of metal ions in the precursor gel and it resulted in the synthesis of glass free $\beta$-spodumene powder having a specific surface area of $7.57\;m^2/g$. The agglomerated $\beta$-spodumene powders were also enough soft to grind to fine powders by a simple ball milling process. The microstructures of the densified powder compacts were strongly dependant on the minor phases of spodumene solid solution and amount of liquid phase, which were formed from the inhomogeneous precursors.

• 한국세라믹학회지
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• 제39권4호
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• pp.336-340
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• 2002

Pure and nano-sized $TiO_2$ and $CaTiO_3$ powders were fabricated by a polymeric steric entrapment route and planetary milling process. An ethylene glycol was used as a polymeric carrier for the preparation of organic-inorganic precursors. Titanium isopropoxide and calcium nitrate were dissolved in liquid-type ethylene glycol without any precipitation. At the optimum amount of the polymer, the metal cations were dispersed in solution and a homogeneous polymeric network was formed. The dried precursor ceramic gels were turned to porous powders through calcination process. The porous powders were crystallized at low temperatures and the crystalline powders were planetary milled to nano size.

• JSTS:Journal of Semiconductor Technology and Science
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• 제2권3호
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• pp.205-212
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• 2002

The growth characteristics of metal-organic chemical vapor deposition (MOCVD) $Pb(Zr_xTi_{1-x})O_3 (PZT) thin films were investigated for the application of high-density ferroelectric random access memories (FRAM) devices beyond 64Mbit density. The supply control of Pb precursor plays the most critical role in order to achieve a reliable process for PZT thin film deposition. We have monitored the changes in the microstructure and electrical properties of films on increasing the Pb precursor supply into the reaction chamber. Under optimized conditions, $Ir/IrO_2/PZT(100nm)/Ir capacitor shows well-saturated hysteresis loops with a remanent polarization (Pr) of $~28{\mu}C/textrm{cm}^2$ and coercive voltage of 0.8V at 2.5V. Other issues such as step coverage, compositional uniformity and low temperature deposition was discussed in viewpoint of actual device application.

• 한국재료학회:학술대회논문집
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• 한국재료학회 2003년도 추계학술발표강연 및 논문개요집
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• pp.132-132
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• 2003

Second-order nonlinear optical(NLO) materials have been extensively studied for applications in photonic devices, such as frequency doubling and electro-optical(EO) modulation, because of their large optical nonlinearity, excellent processibility, low dielectric constant, and high laser damage thresholds. The poling behaviour of NLO chromophore in organic/inorganic matrixes showed the randomization of poled NLO chromophore in the absence of poling Held. The liquid crystal molecules in a droplet showed a long-range orientational order along a director. Therefore, liquid crystal effects on poling behaviour of NLO chromophore dispersed in organically modified inorganic sol-gel materials were investigated. Using sol-gel process for the development of NLO material has received increasing attention, Organically modifked inorganic NLO sol-Eel materials are obtained via incorporation of the organic NLO active chromophore into an alkoxysilane based inorganic network. One of the most important thing in this works was that tetraethoxysilane(TEOS) and methyltrimathoxysilane(HTMS) were used as precursor followed by hydrolysis and condensation without using any acidic catalyst during the process. The NLO chromophores in the liquid crystal nanodomains were well mixed with I/O hybrid matrix, deposited on transparent ITO-coated glasses. The poling behaviour of liquid crystal effects of NLO chromophore dispersed in I/O hybrid matrix were investigated by UV-vis spectroscopy. Size distribution and morphology of the NLO chromophores doped in the liquid crystal nanodomains dispersed in I/O hybrid matrix were investigated by SEM.

• 한국세라믹학회지
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• 제30권5호
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• pp.411-419
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• 1993

A process for the preparation of cobalt oxide powders was developed by the evaporaton of emulsion containing cobalt. The characteristics of powders were examined by means of DTA, X-ray diffracton, SEM, PSA. Cobalt oxide powders were produced by evaporating the emulsion prepared by mixing cobalt sulfate solution and organic phase consisted of kerosene, Span 80 and D2EHPA in the kerosene bath at 16$0^{\circ}C$, then the precursor obtained was calcined at 100$0^{\circ}C$. As the concentration of cobalt ions in the aqueous solution, Span 80 and the stirring speed increased, the mean size of cobalt oxide powders decreased and the size distribution was improved. At the volume ratio of one of the aqueous to organic phase, the finest mean size and the optimum size distribution was obtained. On the other hand the concentration of D2EHPA and liquid paraffin had little effect on the mean size as well as on the size distribution of powders.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2014년도 제46회 동계 정기학술대회 초록집
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• pp.328.2-328.2
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• 2014

Semiconductor nanowires (NWs) have attracted research interests due to the distinct physical properties that can lead to variousoptical and electrical applications. In this paper, we have grown InAs NWs viagold (Au)-assisted vapor-liquid-solid (VLS) and catalyst-free vapor-solid (VS) mechanisms and investigated on the p-type doping profile of the NWs. Metal-organic chemical vapor deposition (MOCVD) is used for the growth of the NWs. Trimethylindium (TMIn) and arsine (AsH3) were used for the precursor and diethyl zinc (DEZn) was used for the p-type doping source of the NWs. The effectiveness of p-type doping was confirmed by electrical measurement, showing an increase of the electron density with the DEZn flow. The structural properties of the InAs NWs were examined using scanning electron microscopy (SEM) and transmission electron microscopy (TEM). In addition, we characterize atomic distribution of InAs NWs using energy-dispersive X-ray spectroscopy (EDX) analysis.

• Journal of information and communication convergence engineering
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• 제1권3호
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• pp.133-138
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• 2003

The preparation of $Al_{2}O_{3}-SiO_{2}$ thin films from less than one micron to several tens of microns in thickness had been prepared from metal alkoxide sols. Two methods, dip-withdrawal and electrophoretic deposition, were employed for thin films and sheets formation. The requirements to be satisfied by the solution for preparing uniform and strong films and by the factors affecting thickness and other properties of the films were examined. For the preparation of thin, continuous $Al_{2}O_{3}-SiO_{2}$ films, therefore, metal-organic-derived precursor solutions contained Si and Al in a chemically polymerized form has been developed and produced in a clear liquid state. In the process of applying to substrates, this liquid left a transparent, continuous film that could be converted to crystalline $Al_{2}O_{3}-SiO_{2}$ upon heating to $1000^{\circ}C$. And, a significant change of the film density took place in the crystallization process, thus leading to the strict requirements as to the film thickness, which could survive crystallization.