JSTS:Journal of Semiconductor Technology and Science

The Institute of Electronics and Information Engineers (대한전자공학회)
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Metal-Organic Chemical Vapor Deposition of $Pb(Zr_xTi_{1-x})O_3$ Thin Films for High-Density Ferroelectric Random Access Memory Application

  • Lee, June-Key (Materials & Laboratory, Samsung Advanced Institute of Technology) ;
  • Ku, June-Mo (Materials & Laboratory, Samsung Advanced Institute of Technology) ;
  • Cho, Chung-Rae (Materials & Laboratory, Samsung Advanced Institute of Technology) ;
  • Lee, Yong-Kyun (Materials & Laboratory, Samsung Advanced Institute of Technology) ;
  • Sangmin Shin (Materials & Laboratory, Samsung Advanced Institute of Technology) ;
  • Park, Youngsoo (Materials & Laboratory, Samsung Advanced Institute of Technology)
  • Published : 2002.09.01
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Abstract

The growth characteristics of metal-organic chemical vapor deposition (MOCVD) $Pb(Zr_xTi_{1-x})O_3 (PZT) thin films were investigated for the application of high-density ferroelectric random access memories (FRAM) devices beyond 64Mbit density. The supply control of Pb precursor plays the most critical role in order to achieve a reliable process for PZT thin film deposition. We have monitored the changes in the microstructure and electrical properties of films on increasing the Pb precursor supply into the reaction chamber. Under optimized conditions, $Ir/IrO_2/PZT(100nm)/Ir capacitor shows well-saturated hysteresis loops with a remanent polarization (Pr) of $~28{\mu}C/textrm{cm}^2$ and coercive voltage of 0.8V at 2.5V. Other issues such as step coverage, compositional uniformity and low temperature deposition was discussed in viewpoint of actual device application.

Keywords

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