• 한국정밀공학회지
• /
• 제25권8호
• /
• pp.17-20
• /
• 2008

• 대한전자공학회:학술대회논문집
• /
• 대한전자공학회 2000년도 하계종합학술대회 논문집(2)
• /
• pp.44-47
• /
• 2000

본 연구는 α-Si:H TFT(Amorphous Silicon Thin Film Transistor)를 대체 할 펜타센을 활성층으로 사용하는 박막 트랜지스터를 제작에 관한 것이다. 유기 박막 트랜지스터는 유기발광소자와 함께 유연한 디스플레이에 응용된다. 펜타센 박막 트랜지스터의 제작은 채널 길이 25㎛, 70㎛, 소스, 드레인, 게이트 전극으로 Au을 lift off 공정으로 제작하였으며, 펜타센은 OMBD(Organic Molecular Beam Deposition)로 기판온도를 80℃로 유지하여 증착하였다. 제작된 소자로부터 트랜지스터 전류-전압 특성곡선을 측정하였고, 게이트에 의한 채널의 전도도가 조절됨을 확인하였다. 그리고, 전달특성곡선으로부터 문턱전압과 전계효과 이동도를 추출하였다.

• 대한전자공학회:학술대회논문집
• /
• 대한전자공학회 2002년도 하계종합학술대회 논문집(2)
• /
• pp.25-28
• /
• 2002

We have been fabricated white organic light emitting diode with two-wavelength ard mixing blue emit in DPVBi (4, 4-bis(2, 2-diphenylvinyl)-1, 1 -biphenyl)layer and yellow emit in rubrene (5, 6, 11, 12-tetraphenylnaphthacene)as emitting layer which are controlled with thickness. This device emits white light emitting in CIE (0.29, 0.33), 1000cd/$m^2$ at DC 18V.

• 대한전자공학회:학술대회논문집
• /
• 대한전자공학회 2002년도 하계종합학술대회 논문집(2)
• /
• pp.253-256
• /
• 2002

In Currently, OTFTS are actively studied around the world because they are expected to create new novel applications, which can not be implemented by the conventional Si semiconductor, due to the unique characteristics of organic materials. In this paper, the hole field effect mobility has been improved to the level of a-Si TFTs with 0.3cm2/V.sec, simply applying the surface treatment process on the gate with organic molecules. In addition, the model has been suggested and the temperature dependence of hole mobility analyzed.

• 대한전자공학회:학술대회논문집
• /
• 대한전자공학회 2000년도 추계종합학술대회 논문집(2)
• /
• pp.37-40
• /
• 2000

This paper has been studied on characteristics of organic light-emitting device with various cathode materials. These catode materials were Al：Li(5%), Al, Cu, CsF/Al. And in these devices, HTL(hole transfer layer) was TPD and EML(emitting layer) was Alq$\sub$3/. We studied the I-V characteristics for each device. And then, the turn-on voltage of device for Al-Li(5%), Al, Cu, CsF/Al cathode were 7, 9, 13, 3V respectively. So, the CsF/Al cathode is superior to other cathode materials for I-V characteristics.

• 한국정보디스플레이학회:학술대회논문집
• /
• 한국정보디스플레이학회 2007년도 7th International Meeting on Information Display 제7권1호
• /
• pp.271-272
• /
• 2007

Displacement current $(I_{dis})$ and drain-to-source current $(I_{DS})$ are evaluated using the simultaneous measurements of source $(I_S)$ and drain $(I_D)$ currents during the application of a constant drain voltage and a triangular-wave gate voltage $(V_{GS})$ to top-contact pentacene thin-film transistors.

• 한국산학기술학회:학술대회논문집
• /
• 한국산학기술학회 2004년도 추계학술대회
• /
• pp.154-156
• /
• 2004

고도의 정보가 집약되고 응용되기 시작하면서 정보를 표현하고자 하는 방법에 대한 연구는 더욱 절실히 요구되고 있다. 자연색에 가까운 고품질의 색상의 화면을 제공하기 위해 디스플레이의 무게와 크기, 전력소모 등의 많은 부분에 대해 연구가 진행되고 있다. 본 논문에서는 이러한 모든 기능을 충족시켜주는 차세대 디스플레이인 OLED(Organic Light-Emitting Diode)에 대한 구동 드라이브를 디지털 회로에 응용하고자 정확한 동작에 필요한 방법에 대해 소개하고 개선점에 대한 연구를 하였다.

• 반도체디스플레이기술학회지
• /
• 제6권4호
• /
• pp.69-73
• /
• 2007

The MIM(metal-insulator-metal) capacitors with the Al/PMMA/ITO/Glass structures were manufactured according to various PMMA concentration of 1, 2, 4, 6, 8 wt%. The lowest leakage current and the largest capacitance were found to be 2.3 pA and 1.2 nF, respectively, for the device with 2 wt% PMMA concentration. The measured capacitance of the devices was almost same values with the calculated one. The optimum film thickness was obtained at the value of 48 nm, showing that the capacitance and leakage current were 1.92 nF, 0.3 pA at 2 wt%, respectively. From this experiment, the PMMA gate insulator films can be applicable to the organic thin film transistors.

• 한국전기전자재료학회논문지
• /
• 제24권1호
• /
• pp.12-16
• /
• 2011

In this study, we fabricated the flexible pentacene TFTs with the polymer gate dielectric and contact printing method by using the silver nano particle ink as a source/drain material on plastic substrate. In this experiment, to lower the cross-linking temperature of the PVP gate dielectric, UV-Ozone treatment has been used and the process temperature is lowered to $90^{\circ}C$ and the surface is optimized by various treatment to improve device characteristics. We tried various surface treatments; $O_2$ Plasma, hexamethyl-disilazane (HMDS) and octadecyltrichlorosilane (OTS) treatment methods of gate dielectric/semiconductor interface, which reduces trap states such as -OH group and grain boundary in order to improve the OTFTs properties. The optimized OTFT shows the device performance with field effect mobility, on/off current ratio, and the sub-threshold slope were extracted as $0.63cm^2 V^{-1}s^{-1}$, $1.7{\times}10^{-6}$, and of 0.75 V/decade, respectively.

• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 2005년도 추계학술대회 논문집 Vol.18
• /
• pp.309-310
• /
• 2005

In the fabrication of high performance red organic light emitting diode, 2-TNA TA [4,4',4" -tris (2-naphthylphenyl- phenylamino)-triphenylamine] as hole injection material and N PH [N,N'-bis (1-naphthyl) -N,N' -diphenyl-1, 1'-biphenyl-4,4'- diamine] as hole transport material were deposited on the ITO (indium tin oxide)/glass substrate by vacuum evaporation, And then, red color emission layer was deposited using Alq3 as a host material and Rubrene (5,6,11,12- tetraphenylnaphthacene) and GDI 4234 as dopants. Finally, small molecular weight OLED with the structure of ITO/2-TNATA/ NPB/Alq3+Rubrene+GDI4234/Alq3/LiF/Al was obtained by in-situ deposition of Alq3, LiF and Al as electron transport material, electron injection material and cathode. respectively. Green OLED fabricated in our experiments showed the color coordinate of CIE(0.65,0.35) and the maximum luminescence efficiency of 2.1 lm/W at 7 V with the peak emission wavelength of 632 nm.