• 한국정보디스플레이학회:학술대회논문집
• /
• 한국정보디스플레이학회 2007년도 7th International Meeting on Information Display 제7권1호
• /
• pp.737-740
• /
• 2007

The buffer layer was spin-coated on the dielectric layer of OTFTs to introduce the hydrophobicity for enhancing the device performance. this functional layer contains the water-proof ingredient to reduce the surface energy and more importantly, does not harm the dielectric property of the dielectric layer. With the help of proposed hydrophobic layer, the transistor showed dramatic improvement at electrical performance which was almost 20 times higher mobility compared to the non-treated case. And on/off ratio was also guaranteed as $10^{5{\sim}6}$.

• 대한전기학회:학술대회논문집
• /
• 대한전기학회 2007년도 Techno-Fair 및 추계학술대회 논문집 전기물성,응용부문
• /
• pp.81-82
• /
• 2007

열처리 조건이 이종접합 유기태양전지(heterojunction organic photovoitaics)의 power conversion efficiency(PCE)에 미치는 영향에 대해 살펴보았다. 본 연구에서는 열처리 온도와 열처리 시간을 변수로 다양한 조건하에서 유기태양전지를 제작하고 AM1.5G 조건에서의 효율 변화를 관찰하였다. 열처리 온도는 $90^{\circ}C$, 열처리 시간은 20분에서 가장 우수한 변환효율이 관찰되었다.

• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 2005년도 하계학술대회 논문집 Vol.6
• /
• pp.522-523
• /
• 2005

Top emission OLED 소자에 사용되는 ITO(Indium-Tin-Oxide)의 저항을 개선하여 보다 낮은 저항을 가지는 전극을 제작하기 위해 AZO(ZnO-Ag-ZnO)를 제작하였다. AZO박막은 기존의 ITO박막이 수십 $\Omega$을 나타내던 것과 비교하여 $8\Omega$으로 매우 낮은 저항을 나타내었다. 투과율은 84%로 기존의 ITO박막과 유사한 성능을 나타내었다.

• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 2006년도 하계학술대회 논문집 Vol.7
• /
• pp.485-486
• /
• 2006

Top emission OLED 소자에 사용되는 ITO(Indium-Tin-Oxide)의 저항을 개선하여 보다 낮은 저항을 가지는 전극을 제작하기 위해 AZO(ZnO-Ag-ZnO)를 제작하였다. AZO박막은 기존의 ITO박막이 수십 $\Omega$을 나타내던 것과 비교하여 $8{\Omega}$으로 매우 낮은 저항을 나타내었다 투과율은 84%로 기존의 ITO박막과 유사한 성능을 나타내었다.

• 한국재료학회지
• /
• 제15권3호
• /
• pp.202-208
• /
• 2005

The surface states of gate dielectrics affect device performance severely in Pentacene OTFTs. We have fabricated organic thin-film transistors (OTFTs) using pentacene as an active layer with chemically modified $SiO_2$ gate dielectrics. The effects of the surface treatment of $SiO_2$ on the electric characteristics of OTFTS were investigated. The surface of $SiO_2$ gate dielectric was treated by normal wet cleaning process, $O_2-plasma$ treatment, hexamethyldisilazane (HMDS), and octadecyltrichlorosilane (OTS) treatment. After the surface treatments, the contact angles and surface free energies were measured in order to analyze the surface state changes. In the electrical measurements, typical I-V characteristics of TFTs were observed. The field effect mobility, $\mu$, was calculated to be $0.29\;cm^2V^{-1}s^{-1}$ for OTS treated sample while those for the HMDS, $O_2$ plasma treated, and wet-cleaned samples were 0.16, 0.1, and $0.04\;cm^2V^{-1}s^{-1}$, respectively.

• 반도체디스플레이기술학회지
• /
• 제6권2호
• /
• pp.11-14
• /
• 2007

For the fabrication of blue color organic light emitting diodes(OLED) with a high performance, 2-TNATA [4,4',4"-tris (2-naphthylphenyl-phenylamino)-triphenylamine] as hole injection material and NPB [N,N'-bis (1-naphthyl) -N,N'-diphenyl-1,1'-biphenyl-4,4'-diamine] as hole transport material were deposited on the ITO (indium tin oxide)/glass substrate by the vacuum thermal evaporation. After then, blue color emission layer was deposited using TPM-BiP[(4'-Benzoylferphenyl-4-yl)phenyl-methanone-Diethyl(biphenyl-4-ymethyl)phosphonate] and GDI602 as a light emitting organic material. Finally, the two kinds of OLEDs with the structure of $ITO/2-TNATA/NPB/TPM-BiP/Alq_3/LiF/Al and ITO/2-TNATA/NPB/GDI602/Alq_3/LiF/Al$ were prepared by in-situ deposition. The maximum current density and luminance were found to be about $588\;mA/cm^2\;and\;5239\;cd/m^2$ at 12V for the OLED sample with the structure of $ITO/2-TNATA/NPB/TPM-BiP/Alq_3/LiF/Al$. Color coordinate of blue OLED was x=0.18, y=0.18 (at llV) and the maximum current efficiency was 2.82 cd/A (at 6V) with the peak emission wavelength of 440 nm.

• 대한전자공학회논문지SD
• /
• 제43권6호
• /
• pp.18-22
• /
• 2006

묽은 n-octadecyltrichlorosilane를 여러 가지 비율로 섞어 만든 유기물에 따라 처리된 $SiO_2$ 절연막의 특성에 대하여 분석하고 펜타센 증착 표면에 생긴 그레인 크기 사이의 상관관계를 조사하였다. 전압-전류 특성 곡선에 의한 누설전류의 증가량이 유기물 처리 농도에 따라 비례적으로 증가하지 않았으며, 0.3 % 처리 농도에서 누설전류가 가장 작게 나타났다. 0.3 % 처리 농도의 $SiO_2$ 절연막은 유무기 복합적인 하이브리드 특성을 나타내고 있으며, 펜타센이 증착된 후 표면 사진에서 그레인 크기가 가장 작게 성장된 것을 확인하였다. 반면에 유기물 특성의 절연막 혹은 무기물 특성의 절연막 위에서 펜타신 물질이 증착후 그레인 크기는 점점 증가하였다.

• 대한전자공학회논문지SD
• /
• 제37권12호
• /
• pp.18-23
• /
• 2000

본 논문에서는 유리기판 위에 공액고분자 물질인 MEH-PPV를 스핀 코팅한 후 Al 전극 사이에 초박막의 CsF층을 진공증착으로 삽입한 유기발광소자를 제안하였다. 이러한 구조에서 CsF층은 음극을 통해 주입된 전자들이 원활히 발광층으로 전송되어 유기발광소자의 발광효율을 증대시켰다. 또한 CsF층의 두께변화를 $2{\AA},\;4{\AA},\;8{\AA},\;10{\AA},\;20{\AA},\;50{\AA},\;75{\AA}$으로 변화를 주어 전류- 전압- 발광 특성을 조사하였다. 그리고 CsF/Al와 CsF/Au 및 Cs/Au 전극을 각각 진공증착하여 비교하였다. CsF층 두께가 $4{\AA}$에서 양자효율이 0.6%로 최대값을 나타냈고 $8{\AA}$ 이상에선 효율이 감소하였지만 CsF층이 없는 순수한 Al전극층에서 효율이 0.01%인 것에 비해 높은 양자효율 값을 유지하였다.

• Journal of Information Display
• /
• 제2권2호
• /
• pp.52-60
• /
• 2001

The electrical and mechanical properties in indium-tin-oxide films deposited on polymer substrate were examined. The materials of substrates were polyethersulfone (PES) which have gas barrier layer and anti-glare coating for plastic-based devices. The experiments were performed by rf-magnetron sputtering using a special instrument and buffer layers. Therefore, we obtained a very flat polymer substrate deposited ITO film and investigated the effects of buffer layers, and the instrument. Moreover, the influences of an oxygen partial pressure and post-deposition annealing in ITO films deposited on polymer substrates were clarified. X-ray diffraction observation, measurement of electrical property, and optical microscope observation were performed for the investigation of micro-structure and electro-mechanical properties, and they indicated that as-deposited ITO thin films are amorphous and become quasi-crystalline after adjusting oxygen partial pressure and thermal annealing above $180^{\circ}C$. As a result, we obtained 20-25 ${\Omega}/sq$ of ITO films with good transmittance (above 80 %) of oxygen contents with under 0.2 % and vacuum annealing. Furthermore, using organic buffer layer, we obtained ITO films which have a rather high electrical resistance (40-45 ${\Omega}/sq$) but have improved optical (more than 85 %) and mechanical characteristics compared to the counterparts. Consequently, a prototype reflective color plastic film LCD was fabricated using the PES polymer substrates to confirm whether the ITO films could be realized in accordance with our experimental results.

• 마이크로전자및패키징학회지
• /
• 제16권2호
• /
• pp.21-25
• /
• 2009

The organic-inorganic thin film transistors (OITFTs) with ZnO channel layer and the cross-linked PVP (Poly-4-vinylphenol) gate insulator were fabricated on the patterned ITO gate/glass substrate. ZnO channel layer was deposited by using atomic layer deposition (ALD). In order to improve the electrical properties, $O_2$ plasma treatment onto PVP film was introduced and investigated the effect of the plasma treatments on the electrical properties of the OITFTs. The field effect mobility and sub-threshold slope (SS) values of the OITFT decreased slightly from 0.24 to 0.16 $cm^2/V{\cdot}s$ and from 9.7 to 9.2 V/dec, respectively with increasing RF power from 30 to 50 Watt. The $I_{on/off}$ ratio was about $10^3$ for all samples with $O_2$ plasma treatment.