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http://dx.doi.org/10.3740/MRSK.2005.15.3.202

Dielectric Surface Treatment Effects on Organic Thin-film Transistors  

Lim Sang Chul (Electronics and Telecommunications Research Institute, Department of Materials Science It Engineering, Chungnam National University)
Kim Seong Hyun (Electronics and Telecommunications Research Institute)
Lee Jung Hun (Electronics and Telecommunications Research Institute, Information Display Department, Hyung Hee University)
Ku Chan Hoe (Electronics and Telecommunications Research Institute, Information Display Department, Hyung Hee University)
Kim Dojin (Department of Materials Science It Engineering, Chungnam National University)
Zyung Taehyong (Electronics and Telecommunications Research Institute)
Publication Information
Korean Journal of Materials Research / v.15, no.3, 2005 , pp. 202-208 More about this Journal
Abstract
The surface states of gate dielectrics affect device performance severely in Pentacene OTFTs. We have fabricated organic thin-film transistors (OTFTs) using pentacene as an active layer with chemically modified $SiO_2$ gate dielectrics. The effects of the surface treatment of $SiO_2$ on the electric characteristics of OTFTS were investigated. The surface of $SiO_2$ gate dielectric was treated by normal wet cleaning process, $O_2-plasma$ treatment, hexamethyldisilazane (HMDS), and octadecyltrichlorosilane (OTS) treatment. After the surface treatments, the contact angles and surface free energies were measured in order to analyze the surface state changes. In the electrical measurements, typical I-V characteristics of TFTs were observed. The field effect mobility, $\mu$, was calculated to be $0.29\;cm^2V^{-1}s^{-1}$ for OTS treated sample while those for the HMDS, $O_2$ plasma treated, and wet-cleaned samples were 0.16, 0.1, and $0.04\;cm^2V^{-1}s^{-1}$, respectively.
Keywords
Organic thin film transistors; HMDS; OTS; semiconductors;
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