Korean Journal of Materials Research (한국재료학회지)

Materials Research Society of Korea (한국재료학회)
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Dielectric Surface Treatment Effects on Organic Thin-film Transistors

유기반도체 트랜지스터의 유전체 표면처리 효과

  • Lim Sang Chul (Electronics and Telecommunications Research Institute, Department of Materials Science It Engineering, Chungnam National University) ;
  • Kim Seong Hyun (Electronics and Telecommunications Research Institute) ;
  • Lee Jung Hun (Electronics and Telecommunications Research Institute, Information Display Department, Hyung Hee University) ;
  • Ku Chan Hoe (Electronics and Telecommunications Research Institute, Information Display Department, Hyung Hee University) ;
  • Kim Dojin (Department of Materials Science It Engineering, Chungnam National University) ;
  • Zyung Taehyong (Electronics and Telecommunications Research Institute)
  • 임상철 (한국전자통신연구원 미래기술연구본부, 충남대학교 재료공학과) ;
  • 김성현 (한국전자통신연구원 미래기술연구본부) ;
  • 이정헌 (한국전자통신연구원 미래기술연구본부, 경희대학교 디스플레이공학과) ;
  • 구찬회 (한국전자통신연구원 미래기술연구본부, 경희대학교 디스플레이공학과) ;
  • 김도진 (충남대학교 재료공학과) ;
  • 정태형 (한국전자통신연구원 미래기술연구본부)
  • Published : 2005.03.01
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Abstract

The surface states of gate dielectrics affect device performance severely in Pentacene OTFTs. We have fabricated organic thin-film transistors (OTFTs) using pentacene as an active layer with chemically modified $SiO_2$ gate dielectrics. The effects of the surface treatment of $SiO_2$ on the electric characteristics of OTFTS were investigated. The surface of $SiO_2$ gate dielectric was treated by normal wet cleaning process, $O_2-plasma$ treatment, hexamethyldisilazane (HMDS), and octadecyltrichlorosilane (OTS) treatment. After the surface treatments, the contact angles and surface free energies were measured in order to analyze the surface state changes. In the electrical measurements, typical I-V characteristics of TFTs were observed. The field effect mobility, $\mu$, was calculated to be $0.29\;cm^2V^{-1}s^{-1}$ for OTS treated sample while those for the HMDS, $O_2$ plasma treated, and wet-cleaned samples were 0.16, 0.1, and $0.04\;cm^2V^{-1}s^{-1}$, respectively.

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References

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