• Steel and Composite Structures
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• 제44권1호
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• pp.17-31
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• 2022

This investigation studies the characteristics of wave dispersion in sigmoid functionally graded (SFG) curved beams lying on an elastic substrate for the first time. Homogenization process was performed with the help of sigmoid function and two power laws. Moreover, various materials such as Zirconia, Alumina, Monel and Nickel steel were explored as curved beams materials. In addition, curved beams were rested on an elastic substrate which was modelled based on Winkler-Pasternak foundation. The SFG curved beams' governing equations were derived according to Euler-Bernoulli curved beam theory which is known as classic beam theory and Hamilton's principle. The resulted governing equations were solved via an analytical method. In order to validate the utilized method, the obtained outcomes were compared with other researches. Finally, the influences of various parameters, including wave number, opening angle, gradient index, Winkler coefficient and Pasternak coefficient were evaluated and indicated in the form of diagrams.

• 한국재료학회지
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• 제30권1호
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• pp.1-7
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• 2020

Doping or incorporation with exotic elements are two manners to regulate the optoelectronic properties of transparent conducting (TCO) cadmium oxide (CdO). Nevertheless, the method of doping host CdO by CdTe semiconductor is of high importance. The structural, optical, and electrical properties of CdTe-doped CdO films are studied for the sake of promoting their conducting parameters (CPs), including their conductivity, carrier concentration, and carrier mobility, along with transparency in the NIR spectral region; these are then compared with the influence of doping the host CdO by pure Te ions. X-ray fluorescence (XRF), X-ray diffraction (XRD), optical absorption spectroscopy, and electrical measurements are used to characterise the deposited films prepared by thermal evaporation. Numerous results are presented and discussed in this work; among these results, the optical properties are studied through a merging of concurrent BGN (redshift) and BGW (blue shift) effects as a consequence of doping processes. The impact of hydrogenation on the characterisations of the prepared films is investigated; it has no qualitative effect on the crystalline structure. However, it is found that TCO-CPs are improved by the process of CdTe doping followed by hydrogenation. The utmost TCO-CP improvements are found with host CdO film including ~ 1 %Te, in which the resistivity decreases by ~ 750 %, carrier concentration increases by 355 %, and mobility increases by ~ 90 % due to the increase of N_carr. The improvement of TCO-CPs by hydrogenation is attributed to the creation of O-vacancies because of H₂ molecule dissociation in the presence of Te ions. These results reflect the potential of using semiconductor CdTe -doped CdO thin films in TCO applications. Nevertheless, improvements of the host CdO CPs with CdTe dopant are of a lesser degree compared with the case of doping the host CdO with pure Te ions.

• 접착 및 계면
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• 제23권2호
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• pp.39-43
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• 2022

디스플레이, 태양전지와 같이 전기를 빛으로, 또는 빛을 전기로 변환시켜주는 광전자소자는 효율 향상을 위하여 빛의 거동 제어가 매우 중요하다. 즉, OLED의 경우 내부 빛 제어를 통해 더 많은 빛이 외부로 나갈 수 있도록 유도해 줄 때 발광효율을 향상시킬 수 있으며, 외부 빛 제어를 통해 광흡수층에서의 광경로를 증대시킬 경우 태양전지의 에너지 변환효율을 증가시킬 수 있다. 본 연구에서는 이러한 광거동 제어가 가능한 구조로서 주름구조에 대한 연구를 진행하였으며 응력 해소 시간을 제어하여 구조의 주기와 높이를 독립적으로 제어하고자 하였다. 주기와 높이의 변화가 광거동에 어떠한 영향을 미치는지 살펴보기 위하여 일정한 주기에서 높이 변화 및 유사한 높이에서 주기 변화에 따른 자외선/가시광선 분광분석(UV/Vis spectroscopy)을 실시하였으며 구조의 종횡비가 클수록 직진광의 비율이 낮고 분산광의 비율이 높음을 확인하였다. 이를 통해 광경로 변화 및 광경로 증가를 위하여 큰 종횡비의 주름구조가 요구됨을 확인할 수 있었다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2013년도 제44회 동계 정기학술대회 초록집
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• pp.466-466
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• 2013

Quantum-dot materials have introduced novel applications in organic light-emitting diodes and solar cells. The size controllability and structure modifications have continuously been upgrading the applicability to optoelectronic and flat-panel displays. In particular, quantum-dot organic light-emitting diodes (QLEDs) are a device driven through the electrical field applied to the electrical diodes. The QLEDs are affected by the constituent materials and the corresponding device structures. Conventionally, the electrical properties are characterized only in terms of dc-based current-voltage characteristics. The dynamic change in light-emitting diodes should be characterized in emitted and non-emitted states. Therefore, the frequency-dependent impedance can offer different information on the electrical performance in QLED. The current work reports an auxiliary information on the electrical and optical features originating from quantum-dot organic light-emitting diodes. The empirical characterizations are discussed towards an experimental tool in optimizing the light-emitting diodes.

• 한국재료학회지
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• 제13권8호
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• pp.485-490
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• 2003

We have developed a new way of the constant growth technique to maintain a grating height of originally-etched V-groove of submicron gratings up to 1.5 $\mu\textrm{m}$ thickness by a low pressure metalorganic chemical vapor deposition. The constant growth technique is well performed on two kinds of submicron gratings that made by holography and electron (e)-beam lithography GaAs buffer layer grown on thermally deformed submicron gratings has an important role in recovering the deformed grating profile from sinusoidal to V-shaped by reducing mass transport effects. The thermal deformation effect on submicron gratings made by e-beam lithography is less than that on submicron gratings made by holography. The constant growth technique is an important step to realize complex optoelectronic devices such as one-step grown distributed feedback lasers and two-dimensional photonic crystals.

• Nuclear Engineering and Technology
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• 제49권3호
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• pp.569-575
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• 2017

One of the important requirements for the application of reduced-activation ferritic/martensitic (RAFM) steel is to retain proper mechanical properties under irradiation and high-temperature conditions. To simulate the yield strength and stress-strain curve of steels during high-temperature and irradiation conditions, a multiscale simulation method consisting of both microstructure and strengthening simulations was established. The simulation results of microstructure parameters were added to a superposition strengthening model, which consisted of constitutive models of different strengthening methods. Based on the simulation results, the strength contribution for different strengthening methods at both room temperature and high-temperature conditions was analyzed. The simulation results of the yield strength in irradiation and high-temperature conditions were mainly consistent with the experimental results. The optimal application field of this multiscale model was 9Cr series (7-9 wt.%Cr) RAFM steels in a condition characterized by 0.1-5 dpa (or 0 dpa) and a temperature range of $25-500^{\circ}C$.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2013년도 제44회 동계 정기학술대회 초록집
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• pp.430-430
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• 2013

Field effect transistor based on semiconductor nanowires has been attracting lots of concerns and studies of scientists because of its different characteristic comparing with other morphology like thin film. Nowadays, graphene is introducing a great promise as an active layer in field effect transistor due to its unique electronic and optoelectronic properties. Thus, a mix structure between etched graphene and semiconductor nanowires is believed to expose novel electrical characteristics. In this study, CuO nanowires (20~80 nm in diameter and $1{\sim}10{\mu}m$ length) were grown during oxidizing Cu foil at $450^{\circ}C$ for 24 h. Besides, 3-layersetched graphene was deposited on Cu foil at $1,000^{\circ}C$ using a feedstock of $CH_4$/$H_2$ mixed gas in CVD system. A structure of Ni/Au electrode + CuO nanowires + etched graphene was fabricated, afterward. Finally, field effect properties of the device was revealed and compared with individual devices of just nanowires and just graphene.

• 한국전기전자재료학회논문지
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• 제31권1호
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• pp.11-18
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• 2018

Two-dimensional (2D) materials such as transition metal dichalcogenides have attracted tremendous scientific interests owing to their potential of solving the zero band-gap issue of graphene. In this work, the research areas and technology evolutionary dynamics of the 2D materials were identified using the scientometric method focusing on keyword mapping and clustering. The time-series analysis showed that the technological progress of 2D material is in the early growth period. The overlay mapping analysis were carried out to investigate the technology evolution of 2D materials with time. The strategic diagram of co-word analysis classifying the topological positions of keyword was derived to support the analysis results. It is conjectured that extensive research will be conducted widely on the application of 2D materials not only in electronic and optoelectronic devices, but also in various other fields such as biomedical applications, and that their development will be more rapid based on accumulated results of extant graphene research.

• 대한금속재료학회지
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• 제48권4호
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• pp.363-368
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• 2010

N,N'-diphenyl-N,N'-bis(3-methylphenyl)1-1' biphenyl-4,4'-diamine (TPD) hole-transporting layers were deposited using a continuous slot-die coating method on ITO/PET flexible substrates. It is crucial that the substrates have a very smooth surface with a RMS roughness of less than 2 nm for the deposition of semiconductor nanocrystals or Quantum Dots. The parameters of the slot-die coating, including the solution concentration of the TPD, the gap between the slot-die and the substrates, and the coating speed were controlled in these experiments. To obtain full coverage of the TPD films on the ITO/PET substrates (40 mm wide and several meters long), the injection rates of the TPD solution were increased proportional to the coating speed of the flexible substrates. Additionally, the injection rates must be increased as the gap distance changes from 400 to 600 ${\mu}m$ at the same coating speed. A RMS surface roughness of less than 2 nm was obtained, in contrast to bare ITO/PET substrates, at 13 nm, as the coating speed and gap distance increased.

• 대한금속재료학회지
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• 제49권5호
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• pp.400-405
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• 2011

ZnO nanotube arrays were synthesized by a two-step process: electrodeposition and selective dissolution. In the first step, ZnO nanorod arrays were grown on an Au/Si substrate by using a homemade electrodeposition system. ZnO nanorod arrays were then selectively dissolved in an etching solution composed of 0.125 M NaOH, resulting in hollow ZnO nanotube arrays. It is suggested that the formation mechanism of the ZnO nanotube arrays might be attributed to the preferred surface adsorption of hydroxide ion ($OH^{-1}$) on a positive polar surface followed by selective dissolution of the metastable Zn-terminated ZnO (0001) polar surface caused by the difference in the surface energy per unit area between the ZnO nanorod and nanotube.