• 세라미스트
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• 제21권2호
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• pp.29-37
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• 2018

In order to overcome the problems of existing low-dimensional materials (carbon nanotubes, graphene, transition metal dichalcogenides, etc) researches on new 1D materials have been studied. In the case of $LiMo_3Se_3$ and $Mo_6S_{9-x}I_x$, continuous researches have been carried out for 3D bulk synthesis and atomic scale dispersion. Recently, quantum confinement effect of $LiMo_3Se_3$ and bio-stability of $Mo_6S_{9-x}I_x$ have been proven and various applications have started to be studied. In addition, device application results using new 1D materials such as $Sb_2Se_3$ (optoelectronic devices using the property of effectively reducing exciton decay due to no dangling bond) and $VS_4$ (electrochemical energy storage using the space between 1-D nanostructures) have been reported very importantly. Therefore, it can be claimed that it has reached a very important time to find and synthesize new 1D materials and to report various characteristics not existing.

• E2M - 전기 전자와 첨단 소재
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• 제9권9호
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• pp.969-977
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• 1996

본고에서는 여러가지 Wide Band-gap중에서 특히 최근에 많은 관심을 끌고 있는 GaN와 4H-SiC, 6H0SiC의 전자기적 물성을 소개하고 현재 이들로부터 제작된 prototype소자들의 성능을 비교함으로써 그 발전현황을 알아보기로 한다. 본고에서 관심을 두는 소자분야는 광전소자(optoelectronic devices)라기보다는 고주파 고출력용 전력소자임을 밝힌다. 아울러 GaN로부터 제작된 MESFET(MEtal Semiconductor Field-Effect Transistor)소자의 고주파 대역에서의 Large-Signal특성을 Device/Circuit Model을 통하여 실험치와 비교하여보고 이로부터 최적화된 channel 구조를 갖는 소자구조에서의 RF특성을 조사한다.

• 한국전기전자재료학회논문지
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• 제15권1호
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• pp.75-78
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• 2002

Si thin films on p-type (100) Si substrate have been prepared by a pulsed laser deposition technique using a Nd:YAG laser. The pressure of the environmental gas during deposition was 1 Torr. After deposition, Si thin film has been annealed again at 400-840$^{\circ}C$ in nitrogen ambient. Strong blue photoluminescence (PL) have been observed at room temperature. We report the PL properties of Si thin films with the variation of the annealing temperature.

• Transactions on Electrical and Electronic Materials
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• 제13권1호
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• pp.6-9
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• 2012

In this study, we carried out an investigation of the etching characteristics (etch rate, selectivity to $SiO_2$) of ZnO thin films in $N_2/Cl_2$/Ar inductivity coupled plasma. A maximum etch rate and selectivity of 108.8 nm/min and, 3.21, respectively, was obtained for ZnO thin film at a $N_2/Cl_2$/Ar gas mixing ratio of 15:16:4 sccm. The plasmas were characterized by optical emission spectroscopy. The x-ray photoelectron spectroscopy analysis showed the efficient destruction of oxide bonds by ion bombardment. An accumulation of low volatile reaction products on the etched surface was also shown. Based on this data, an ion-assisted chemical reaction is proposed as the main etch mechanism for plasmas containing $Cl_2$.

• Electronic Materials Letters
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• 제14권6호
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• pp.657-668
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• 2018

Organic-inorganic hybrid lead halide perovskites have been extensively investigated for various optoelectronic applications. Particularly, owing to their ability to form highly crystalline and homogeneous films utilizing low-temperature solution processes (< $150^{\circ}C$), perovskites have become promising photoactive materials for realizing high-performance flexible solar cells. However, the current use of mesoporous $TiO_2$ scaff olds, which require high-temperature sintering processes (> $400^{\circ}C$), has limited the fabrication of perovskite solar cells on flexible substrates. Therefore, the development of a low-temperature processable charge-transporting layer has emerged as an urgent task for achieving flexible perovskite solar cells. This review summarizes the recent progress in low-temperature processable electron- and hole-transporting layer materials, which contribute to improved device performance in flexible perovskite solar cells.

• 전자통신동향분석
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• 제33권6호
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• pp.81-93
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• 2018

Metamaterials are artificial media that can control the properties of waves at will. Active photonic metadevice technologies cover the device and material technologies that control the visible and IR light through an external signal (mainly an electrical signal). The application areas of active photonic metadevices are tremendous for example holography, active HOE, bio imaging, IR imaging, telecommunication, and optoelectronic devices. In this paper, the technical trends and prospects of active metamaterials, active meta holography, active meta devices, nano-optical telecommunication devices, and IR imaging meta devices are reviewed.

• Current Optics and Photonics
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• 제3권2호
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• pp.172-176
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• 2019

The work reports on the fabrication of an optical planar waveguide in the Nd:CNGG crystal by the 0.4-MeV hydrogen ion implantation with a fluence of $8.0{\times}10^{16}ions/cm^2$. The nuclear energy loss of the implanted hydrogen ions was derived by using SRIM 2013 code. The microscope image of the proton-implanted Nd:CNGG crystal cross section was captured by a metallographic microscope. The transmittance spectra were recorded before and after the ion implantation. The light intensity distribution of the planar waveguide at 632.8 nm was experimentally measured to validate its effect on one dimension confinement. The investigation shows that the proton-implanted Nd:CNGG waveguide is a candidate for an optoelectronic integrated device.

• 한국산학기술학회논문지
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• 제17권4호
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• pp.122-128
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• 2016

본 논문에서는 OTDR 신호에 대한 새로운 이벤트 분석방법을 제안하였다. OTDR 신호는 고주파 잡음을 효율적으로 제거하기 위해 해밍 필터를 거친 다음, 이벤트 검출을 위해 미분 필터를 통과시킨다. 종단을 전 후로 신호레벨이 현저하게 차이가 나는 점을 이용하여 OTDR 신호의 종단 위치를 찾고, 이 범위 내에서 미분 필터를 통과한 신호의 극대점을 조사하여 피크영역을 검출한다. 검출된 피크 영역에서 잡음 정보와 피크 임계값을 이용하여 피크의 진위를 판단한 다음 이를 이용하여 이벤트 정보를 구성한다. 마지막으로 종단 위치 이후에서는 가입자 피크를 검사하여 가입자 이벤트 정보를 구한다. 시뮬레이션 결과를 광선로 구성과 비교한 결과 제안된 방법은 이벤트 발생지점을 17m 이내로 검출하였다. JDSU 장비의 경우, 이벤트 발생지점이 25m 이내, 가입자 사이 간격은 5m 이내로 검출하였고, RadianTech 장비의 경우에는 이벤트 발생 지점이 19m 이내, 가입자 사이의 간격은 5m 이내로 검출하였다. 이러한 결과는 본 논문에서 제안한 신호 분석방법이 광선로망 감시 시스템 운용에 충분히 활용 가능하다는 것을 보여준다고 할 수 있다.

• Current Photovoltaic Research
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• 제11권3호
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• pp.67-74
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• 2023

The earth-abundant element-based Cu₂ZnSn(S,Se)₄ (CZTSSe) thin film solar cells (TFSCs) have attracted greater attention in the photovoltaic (PV) community due to their rapid development in device power conversion efficiency (PCE) >13%. In the present work, we demonstrated the fine-tuning of the bandgap in the CZTSSe TFSCs by altering the sulfur (S) to the selenium (Se) chalcogenide ratio. To achieve this, the CZTSSe absorber layers are fabricated with different S/(S+Se) ratios from 0.02 to 0.08 of their weight percentage. Further compositional, morphological, and optoelectronic properties are studied using various characterization techniques. It is observed that the change in the S/(S+Se) ratios has minimal impact on the overall Cu/(Zn+Sn) composition ratio. In contrast, the S and Se content within the CZTSSe absorber layer gets altered with a change in the S/(S+Se) ratio. It also influences the overall absorber quality and gets worse at higher S/(S+Se). Furthermore, the device performance evaluated for similar CZTSSe TFSCs showed a linear increase and decrease in the open circuit voltage (V_oc) and short circuit current density (J_sc) of the device with an increasing S/(S+Se) ratio. The external quantum efficiency (EQE) measured also exhibited a linear blue shift in absorption edge, increasing the bandgap from 1.056 eV to 1.228 eV, respectively.

• JSTS:Journal of Semiconductor Technology and Science
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• 제7권3호
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• pp.196-208
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• 2007

An analytical model is proposed for an optically controlled Metal Semiconductor Field Effect Transistor (MESFET), known as Optical Field Effect Transistor (OPFET) considering the diffusion fabrication process. The electrical parameters such as threshold voltage, drain-source current, gate capacitances and switching response have been determined for the dark and various illuminated conditions. The Photovoltaic effect due to photogenerated carriers under illumination is shown to modulate the channel cross-section, which in turn significantly changes the threshold voltage, drainsource current, the gate capacitances and the device switching speed. The threshold voltage $V_T$ is reduced under optical illumination condition, which leads the device to change the device property from enhancement mode to depletion mode depending on photon impurity flux density. The resulting I-V characteristics show that the drain-source current IDS for different gate-source voltage $V_{gs}$ is significantly increased with optical illumination for photon flux densities of ${\Phi}=10^{15}\;and\;10^{17}/cm^2s$ compared to the dark condition. Further more, the drain-source current as a function of drain-source voltage $V_{DS}$ is evaluated to find the I-V characteristics for various pinch-off voltages $V_P$ for optimization of impurity flux density $Q_{Diff}$ by diffusion process. The resulting I-V characteristics also show that the diffusion process introduces less process-induced damage compared to ion implantation, which suffers from current reduction due to a large number of defects introduced by the ion implantation process. Further the results show significant increase in gate-source capacitance $C_{gs}$ and gate-drain capacitance $C_{gd}$ for optical illuminations, where the photo-induced voltage has a significant role on gate capacitances. The switching time ${\tau}$ of the OPFET device is computed for dark and illumination conditions. The switching time ${\tau}$ is greatly reduced by optical illumination and is also a function of device active layer thickness and corresponding impurity flux density $Q_{Diff}$. Thus it is shown that the diffusion process shows great potential for improvement of optoelectronic devices in quantum efficiency and other performance areas.