• Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
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• v.20 no.7
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• pp.6-13
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• 2006

Tin doped indium oxide(ITO) and Al doped zinc oxide(ZnO:Al) films, which are widely used as a transparent conductor in optoelectronic devices, were prepared by using the capacitively coupled DC magnetron sputtering method. ITO and ZnO:Al films with the optimum growth conditions showed each resistivity of $1.67{\times}10^{-3}[{\Omega}-cm],\;2.2{\times}10^{-3}[{\Omega}-cm]$ and transmittance of 89.61[%], 90.88[%] in the wavelength range of the visible spectrum. The two types of 5 inch-PDP cells with ZnO:Al and ITO transparent electrodes were made under the same manufacturing conditions. The PDP cell with ZnO:Al film was optimally operated in the mixing gas rate of Ne(base)-Xe(8[%]), and at gas pressure of 400[Torr]. It also shows the average measured brightness of $836[cd/m^2]$ at voltage range of $200{\sim}300$[V]. Luminous efficiency, one of the key parameter for high brightness and low power consumption, ranges from 1.2 to 1.6[lm/W] with increasing frequency of ac power supplier from 10 to 50[Khz]. The brightness and luminous efficiency are lower than those with ITO electrode by about 10[%]. However, these values are considered to be enough for the normal operation of PDP TV.

• The Bulletin of The Korean Astronomical Society
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• v.36 no.2
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• pp.77.2-77.2
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• 2011

We present our follow-up observation of the recently discovered supernova in M101. Being only 6.4 Mpc away from the Earth, the object is a Type-Ia supernova discovered this close in decades. We followed up this event with various observing facilities including on-campus telescopes at Seoul National University, the McDonald observatoy's 2.1m telescope, and UKIRT 4-m telescope. The light curves and the preliminary analysis of the multi-wavelength data will be presented, which cover the wavelengths from optical to NIR.

• Journal of the Microelectronics and Packaging Society
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• v.13 no.4
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• pp.51-56
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• 2006

Polymer light emitting diodes (PLEDs) with ITO/EDOT:PSS/PVK/PFO-poss/LiF/Al structures were prepared by the spin coating method on ITO(indium tin oxide)/glass substrates. PFO-poss[Poly(9,9-dioctylfluorenyl-2,7-diyl) end capped with poss] was used as light emitting polymer. PVK[poly(N-vinyl carbazole)] and PEDOT:PSS [poly(3,4-ethylenedioxythiophene):poly(styrene sulfolnate)] polymers were used as the hole injection and transport materials. The effect of PFO-poss concentration and the heating temperatures on the electrical and optical properties of the devices were investigated. At the same concentration of PFO-poss solution, the current density and luminance of PLED device tend to increase as the annealing temperature increase from $100^{\circ}C$ to $200^{\circ}C$. The maximum luminance was found to be about 958 cd/m2 at 13V for the PLED device with 1.0 wt% PFO-poss at the annealing temperature of $200^{\circ}C$. In addition, the PLED device showed bluish white emission through the strong greenish peak with 523 nm in wavelength. As the concentration of PFO-poss increase from 0.5 wt% to 1.0 wt% and temperature of PLEDs increase from $100^{\circ}C$ to $200^{\circ}C$, the emission color tend to be shifted from blue with (x, y) = (0.17,0.14) to bluish white with (x, y) : (0.29,0.41) in CIE color coordinate.

• Korean Journal of Materials Research
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• v.23 no.3
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• pp.155-160
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• 2013

ZnO thin films co-doped with Mg and Ga (MxGyZzO, x + y + z = 1, x = 0.05, y = 0.02 and z = 0.93) were prepared on glass substrates by RF magnetron sputtering with different sputtering powers ranging from 100W to 200W at a substrate temperature of $350^{\circ}C$. The effects of the sputtering power on the structural, morphological, electrical, and optical properties of MGZO thin films were investigated. The X-ray diffraction patterns showed that all the MGZO thin films were grown as a hexagonal wurtzite phase with the preferred orientation on the c-axis without secondary phases such as MgO, $Ga_2O_3$, or $ZnGa_2O_4$. The intensity of the diffraction peak from the (0002) plane of the MGZO thin films was enhanced as the sputtering power increased. The (0002) peak positions of the MGZO thin films was shifted toward, a high diffraction angle as the sputtering power increased. Cross-sectional field emission scanning electron microscopy images of the MGZO thin films showed that all of these films had a columnar structure and their thickness increased with an increase in the sputtering power. MGZO thin film deposited at the sputtering power of 200W showed the best electrical characteristics in terms of the carrier concentration ($4.71{\times}10^{20}cm^{-3}$), charge carrier mobility ($10.2cm^2V^{-1}s^{-1}$) and a minimum resistivity ($1.3{\times}10^{-3}{\Omega}cm$). A UV-visible spectroscopy assessment showed that the MGZO thin films had high transmittance of more than 80 % in the visible region and that the absorption edges of MGZO thin films were very sharp and shifted toward the higher wavelength side, from 270 nm to 340 nm, with an increase in the sputtering power. The band-gap energy of MGZO thin films was widened from 3.74 eV to 3.92 eV with the change in the sputtering power.

• Korean Journal of Optics and Photonics
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• v.17 no.3
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• pp.278-284
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• 2006

We have fabricated and measured electrooptic modulator using coupled stack InAs/InGaAs quantum dots. The height of the quantum dot is 16 nm and quantum dots are stacked including an InGaAs capping layer. The peak wavelength of photoluminescence is 1260 nm at room temperature and 1158 nm at 12 K. The operation characteristics of the quantum dots show high modulation efficiency of electrooptic modulator at 1550 nm compared to that of existing III-V bulk and MQW type semiconductor. The measured switching voltage ($V\pi$) is 540 and 600 mV, for TE mode and TM mode, respectively. From the results, the modulation efficiency can be determined as 333.3 and $300^{\circ}/V{\cdot}mm$ for TE and TM modes. The results reported here may lead to the design and fabrication of a novel electrooptic modulator with low switching voltage and high efficiency.

• Korean Journal of Optics and Photonics
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• v.16 no.3
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• pp.209-216
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• 2005

A new second generation advanced thermal imager, which can be used for battle tank sight has been developed by ADD. This system uses a $480\times6$ TDI HgCdTe detector, operating in the $7.7-10.3{\mu}m$ wavelength made by Sofradir. The IR optics has dual field of views such as $2.67\times2^{\circ}$ in NFOV and $10\times7.5^{\circ}$ in WFOV. And also, this optics is used for athermalization of the system. It is certain that our sensor can be used in wide temperature range without any degradation of the system performance. The scanning system to be able to display 470,000 pixels is developed so that the pixel number is greatly increased comparing with the first generation thermal imaging system. In order to correct non-uniformity of detector arrays, the two point correction method has been developed by using the thermo electric cooler. Additionally, to enhance the image of low contrast and improve the detection capability, we have proposed the new technique of histogram processing being suitable for the characteristics of contrast distribution of thermal imagery. Through these image processing techniques, we obtained the highest quality thermal image. The MRTD of the LWIR thermal sight shows good results below 0.05K at spatial frequency 2 cycles/mrad at the narrow field of view.

• Bulletin of the Korean Chemical Society
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• v.35 no.2
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• pp.505-512
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• 2014

A new donor-accepter-donor-accepter-donor (D-A-D-A-D) type 2,1,3-benzothiadiazole-thiophene-based acceptor unit 2,5-di(4-(5-bromo-4-octylthiophen-2-yl)-2,1,3-benzothiadiazol-7-yl)thiophene ($DTBTTBr_2$) was synthesized. Copolymerized with fluorene and indeno[1,2-b]fluorene electron-rich moieties, two alternating narrow band gap (NBG) copolymers PF-DTBTT and PIF-DTBTT were prepared. And two copolymers exhibit broad and strong absorption in the range of 300-700 nm with optical band gap of about 1.75 eV. The highest occupied molecular orbital (HOMO) energy levels vary between -5.43 and -5.52 eV and the lowest unoccupied molecular orbital (LUMO) energy levels range from -3.64 to -3.77 eV. Potential applications of the copolymers as electron donor material and $PC_{71}BM$ ([6,6]-phenyl-$C_{71}$ butyric acid methyl ester) as electron acceptors were investigated for photovoltaic solar cells (PSCs). Photovoltaic performances based on the blend of PF-DTBTT/$PC_{71}BM$ (w:w; 1:2) and PIF-DTBTT/$PC_{71}BM$ (w:w; 1:2) with devices configuration as ITO/PEDOT: PSS/blend/Ca/Al, show an incident photon-to-current conversion efficiency (IPCE) of 2.34% and 2.56% with the open circuit voltage ($V_{oc}$) of 0.87 V and 0.90 V, short circuit current density ($J_{sc}$) of $6.02mA/cm^2$ and $6.12mA/cm^2$ under an AM1.5 simulator ($100mA/cm^2$). The photocurrent responses exhibit the onset wavelength extending up to 720 nm. These results indicate that the resulted narrow band gap copolymers are viable electron donor materials for polymer solar cells.

• Korean Journal of Materials Research
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• v.8 no.6
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• pp.520-525
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• 1998

The optical properties with chemical composition change in BaO- MgO-$AI_2O_3$, system activated by divalent Eu ion were investigated under 254nm ultraviolet(UV) and 147nm vacuum ultraviolet(VUV). These phosphors emitted a blue light at a dominant wavelength of $\lambda$=445nm under UV and VUV irradiations. It was found that the brightness of $BaMgAI_{14}O_{23}$ phosphor increased with Eu concentration up to 10% under UV but it showed a maximum emitting intensity at 5% Eu for VUV. The emitting intensity of blue color of $BaMgAl_{10}O_{l7}$ phosphor was higher than that of $BaMgAI_{14}O_{23}$for both excitation. A further improvement in brightness was obtained for $Ba_{o.9}Ca_{0.1}MaAl_{14}O_{23}$ and $Ba_{0.9}Sr_{0.1}MgAl_{10}O_{17}$ phosphor synthesized by the substition of $Ba^{+2}$ ion with O.lmole of $Ca^{+2}$ or $Sr^{+2}$ ions in $BaMgAl_{IO}O_{17}$: Eu phosphor.

• Korean Journal of Materials Research
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• v.23 no.1
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• pp.35-40
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• 2013

In this study, the influence on the surface passivation properties of crystalline silicon according to silicon wafer thickness, and the correlation with a-Si:H/c-Si heterojunction solar cell performances were investigated. The wafers passivated by p(n)-doped a-Si:H layers show poor passivation properties because of the doping elements, such as boron(B) and phosphorous(P), which result in a low minority carrier lifetime (MCLT). A decrease in open circuit voltage ($V_{oc}$) was observed when the wafer thickness was thinned from $170{\mu}m$ to $50{\mu}m$. On the other hand, wafers incorporating intrinsic (i) a-Si:H as a passivation layer showed high quality passivation of a-Si:H/c-Si. The implied $V_{oc}$ of the ITO/p a-Si:H/i a-Si:H/n c-Si wafer/i a-Si:H/n a-Si:H/ITO stacked layers was 0.715 V for $50{\mu}m$ c-Si substrate, and 0.704 V for $170{\mu}m$ c-Si. The $V_{oc}$ in the heterojunction solar cells increased with decreases in the substrate thickness. The high quality passivation property on the c-Si led to an increasing of $V_{oc}$ in the thinner wafer. Short circuit current decreased as the substrate became thinner because of the low optical absorption for long wavelength light. In this paper, we show that high quality passivation of c-Si plays a role in heterojunction solar cells and is important in the development of thinner wafer technology.

• Korean Journal of Food Science and Technology
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• v.33 no.1
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• pp.149-152
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• 2001

Extraction characteristics of anthocyanin pigment from red flower cabbage(Brassica oleracea L. var. acephala) as a new source of natural food colorant were investigated. The pigment extracted from red flower cabbage showed the characteristic bathochromic shift of the maximum wavelength of light absorption(${\lambda}_{max}$) as pH of the solution changed from pH 1 to 12. As the concentration of citric acid in the extraction solvent increased, extraction rate and total optical density(TOD) of the extract increased. Maximum TOD was obtained by using the extracting solvent including $0.8{\sim}1.0%$ citric acid and stable pigment solution was obtained by using the extracting solvent including $10{\sim}20%$ ethanol in distilled water. As a result, 10% ethanolic solution with 0.8% citric acid was decided as the optimum extraction solvent for the anthocyanin pigment from red flower cabbage. Within the experimental ranges, the extraction rate increased and therefore extraction time decreased as the extraction temperature increased. The times to reach a certain value of TOD i.e., 2.1 were 24, 8, 4 and 2 hours at extraction temperature of 5, 20, 40 and $60^{\circ}C$, respectively.