Korean Journal of Optics and Photonics (한국광학회지)

Optical Society of Korea (한국광학회)
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Electrooptic Modulator with InAs Quantum Dots

InAs/InGaAs 양자점을 이용한 전계광학변조기

  • Ok, Seong-Hae (School of electronics and electrical engineering, Chung-Ang University) ;
  • Moon, Yon-Tae (School of electronics and electrical engineering, Chung-Ang University) ;
  • Choi, Young-Wan (School of electronics and electrical engineering, Chung-Ang University) ;
  • Son, Chang-Wan (Photonics Research Center, Korea Institute of Science and Technology) ;
  • Lee, Seok (Photonics Research Center, Korea Institute of Science and Technology) ;
  • Woo, Deok-Ha (Photonics Research Center, Korea Institute of Science and Technology) ;
  • Byun, Young-Tae (Photonics Research Center, Korea Institute of Science and Technology) ;
  • Jhon, Young-Min (Photonics Research Center, Korea Institute of Science and Technology) ;
  • Kim, Sun-Ho (Photonics Research Center, Korea Institute of Science and Technology) ;
  • Yi, Jong-Chang (School of electronics and electrical engineering, Hong-Ik University) ;
  • Oh, Jae-Eung (Department electronic, electrical, control and Instrumentation engineering, Han-Yang University)
  • 옥성해 (중앙대학교 전자전기공학부 전파 광파 통신 연구실) ;
  • 문연태 (중앙대학교 전자전기공학부 전파 광파 통신 연구실) ;
  • 최영완 (중앙대학교 전자전기공학부 전파 광파 통신 연구실) ;
  • 손창완 (한국과학기술연구원 광기술연구센터) ;
  • 이석 (한국과학기술연구원 광기술연구센터) ;
  • 우덕하 (한국과학기술연구원 광기술연구센터) ;
  • 변영태 (한국과학기술연구원 광기술연구센터) ;
  • 전영민 (한국과학기술연구원 광기술연구센터) ;
  • 김선호 (한국과학기술연구원 광기술연구센터) ;
  • 이종창 (홍익대학교 전자전기공학부) ;
  • 오재응 (한양대학교 전자전기제어계측 대학원)
  • Published : 2006.03.01
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Abstract

We have fabricated and measured electrooptic modulator using coupled stack InAs/InGaAs quantum dots. The height of the quantum dot is 16 nm and quantum dots are stacked including an InGaAs capping layer. The peak wavelength of photoluminescence is 1260 nm at room temperature and 1158 nm at 12 K. The operation characteristics of the quantum dots show high modulation efficiency of electrooptic modulator at 1550 nm compared to that of existing III-V bulk and MQW type semiconductor. The measured switching voltage ($V\pi$) is 540 and 600 mV, for TE mode and TM mode, respectively. From the results, the modulation efficiency can be determined as 333.3 and $300^{\circ}/V{\cdot}mm$ for TE and TM modes. The results reported here may lead to the design and fabrication of a novel electrooptic modulator with low switching voltage and high efficiency.

본 연구에서는 광통신 시스템에서의 고속변조를 위하여 사용되는 전계광학 변조기를 구현하기 위하여 InAs 양자점(Quantum Dots)을 변조영역으로 하는 전계광학 변조기를 설계, 제작하였다. 제작한 양자점 전계광학 변조기에서 1550 nm의 파장을 가지는 입력광의 변조 특성을 측정하여 벌크(Bulk)형태의 변조영역을 가지는 동일한 구조의 전계광학 변조기와 비교하였다. 위상변조효율은 TE 모드에서 $333.3^{\circ}/V{\cdot}mm$, TM 모드에서 $300^{\circ}/V{\cdot}mm$ 로 측정되었으며, 기존의 벌크로 변조영역이 구성된 전계광학 변조기와 동일한 소자구조를 가지는 전계광학 변조기에 비해 편광의존도가 낮으며 위상변조효율이 20배 이상 향상된 결과를 얻었으며, 양자우물구조에 비하여는 3배 이상의 높은 위상변조효율을 얻었다.

Keywords

References

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