• Journal of the Optical Society of Korea
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• v.17 no.4
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• pp.323-327
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• 2013

A laser ultrasonic inspection system has the advantage of nondestructive testing. It is a non-contact mode using a laser interferometer to measure the vertical displacement of the surface of a material caused by the propagation of ultrasonic signals with the remote ultrasonic generated by laser. After raising the ultrasonic signal with a broadband frequency range using a pulsed laser beam, the laser beam is focused to a small point to measure the ultrasonic signal because it provides an excellent measurement resolution. In this paper, foreign materials are measured by a non-destructive and non-contact method using the laser ultrasonic inspection system. Mixed foreign material on the corroded part is assumed and the laser ultrasonic experiment is conducted. An ultrasonic wave is generated by pulse laser from the back of the specimen and an ultrasonic signal is acquired from the same location of the front side using continuous wave laser and Confocal Fabry-Perot Interferometer (CFPI). The characteristic of the ultrasonic signal of existing foreign material is analyzed and the location and size of foreign material is measured.

• Journal of the Korean Society of Visualization
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• v.22 no.1
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• pp.18-27
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• 2024

A series of shock wave pulses with Mach number 2.2 of 100, 200, and 300 shocks were applied to lead sulfide (PbS) nanomaterials at intervals of 5 sec per shock pulse. To investigate the crystallographic, electronic, and magnetic phase stabilities, powder X-ray diffractometry (XRD), diffused reflectance spectroscopy (DRS), and vibrating-sample magnetometry (VSM) were employed. The material exhibited a rock salt structure (NaCl-type structure); XRD results indicated that material is monoclinic with space group C121 (5). Further, XRD results showed shifts due to lattice contraction and expansion when material was subjected to shock wave pulses, indicating stable material structure. Based on the data obtained, we believe that the PbS material is a good choice for high-pressure, high-temperature, and aerospace applications due to its superior shock resistance characteristics.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.23 no.8
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• pp.638-644
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• 2010

We have carry out numerical simulation of the electric-optical characteristics of organic light emitting diodes with gradient-doped emitting layer which were reported to be effective in improving luminous efficiency and lifetime. In this paper, the basic structure is comprised of ITO/NPB/$Alq_3$:C545T[%]/$Alq_3$/LiF/Al, six devices by separating the emitting layer of $Alq_3$:C545T[%] were studied. As the result, the uniformly-doped devices exhibited superior luminous efficiency-current density characteristics over conventional undoped device. In the case of gradient-doped devices, electric-optical characteristics were improved similar to uniformed-doped devices, unusually the distribution of traped-charge density in the OLED devices was shown as the staircase.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.31 no.5
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• pp.320-323
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• 2018

SiGe thin films were deposited by remote plasma enhanced chemical vapor deposition (RPE-CVD) at $400^{\circ}C$ using $SiH_4$ or $SiCl_4$ and $GeCl_4$ as the source of Si and Ge, respectively. The growth rate and the degree of crystallinity of the fabricated films were characterized by scanning electron microscopy and Raman analysis, respectively. The optical and electrical properties of SiGe films fabricated using $SiCl_4$ and $SiH_4$ source were comparatively studied. SiGe films deposited using $SiCl_4$ source showed a lower growth rate and higher crystallinity than those deposited using $SiH_4$ source. Ultraviolet and visible spectroscopy measurement showed that the optical band gap of SiGe is in the range of 0.88~1.22 eV.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.05b
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• pp.107-110
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• 2002

The optical memory devices of BST thin films to composite $(Ba_{0.7}\;Sr_{0.3})TiO_{3}$ using sol-gel method were fabricated by changing of the depositing layer number on $Pt/Ti/SiO_{2}/Si$ substrate. The structural properties of optical memory devices to be ferroelectric was investigated by fractal analysis and 3-dimension image processing. The thickness of BST thin films at each coating numbers 3, 4 and 5 times was $2500[\AA]$, $3500[\AA]$ and $3800[\AA]$. BST thin films exhibited the most pronounced grain growth. The surface morphology image was roughness with coating numbers. The thin films increasing with coating numbers shows a more textured and complex configuration.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.20 no.9
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• pp.776-779
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• 2007

In this study we present the effect of annealing temperatures on the structural, electrical and optical characteristics of Ga-doped ZnO (GZO) films. GZO target is deposited on coming 7059 glass substrates by DC sputtering. and then GZO films are annealed at temperatures of 400, 500, $600^{\circ}C$ in air ambient for 20 min. in this case of as-grown film, it shows the resistivity of $6{\times}10^{-1}{\Omega}{\cdot}cm$ and transmittance under 85%, whereas the electrical and optical properties of film annealed at $500^{\circ}C$ are enhanced up to $1.9{\times}10^{-3}{\Omega}{\cdot}cm$ and 90%, respectively.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1995.05a
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• pp.39-42
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• 1995

In this study, PLZT thin films prepared by Sol-Gel method were deposited on ITO glass by spin coating and cryatallized at 750$^{\circ}C$ for 5 min by RTA in oreder to investigate their electrical and optical properties. Although thin film experieneced narrowing their hysteresis loops with increasing La content, E$\sub$c/ and P.sub r/ were higher for thin film than for bulk materials. $\varepsilon$$\sub$r/ and optical transmittance increased with increasing La content.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.23 no.11
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• pp.891-895
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• 2010

Polymer dispersed liquid crystal (PDLC) films were prepared by the phase separation method using the liquid crystal (E7) and prepolymers. This work investigated the electro-optical characteristics of various PDLC films. In order to have good contrast ratio, the polymer refractive index must be adjusted to the ordinary refractive index of the liquid crystal. The driving voltage of PDLC films were mainly affected by elastic deformation. E7-Ebecryl810-IOA-TMPTA-HMPPO system had good threshold voltage and driving voltage and E7-Ebecryl810-EHA-PEGDA-HMPPO system had good contrast ratio.

• Transactions on Electrical and Electronic Materials
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• v.12 no.2
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• pp.84-87
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• 2011

We fabricated phosphorescent organic light-emitting devices with a 1,1-bis[(di-4-tolylamino)phenyl]cyclohexane (TAPC) host layer. Two kinds of devices, one of ITO/TAPC/TAPC:FIrpic/TAZ/LiF/Al (device A) and one of ITO/TAPC:FIrpic/TAPC/TAZ/LiF/Al (device B), were prepared to investigate electrical and optical properties. Iridium(III) bis[(4,6-difluorophenyl)-pyridinato-N,$C^{2'}$]picolinate (FIrpic) and 3-(4-biphenylyl)-4-phenyl-5-(4-tert-butylphenyl)-1,2,4-triazole (TAZ) were used as a blue phosphorescent guest material and an electron transport layer, respectively. The TAPC layer in device B strongly contributes to whitish emission, higher driving voltage, and lower current efficiency characteristics compared with device A. The mechanisms of these electrical and optical characteristics of the devices were investigated.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.21 no.7
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• pp.620-628
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• 2008

Cadmium sulphide (CdS) thin film, which is used as a window layer of heterojunction solar cell, on the glass substrate was deposited by vacuum evaporation. Effects of deposition conditions such as the source and substrate temperature on electrical and optical properties of CdS films was investigated. As the source temperature was increased, the deposition rate of CdS films was increased. In addition, the optical transmittance and the electrical resistivity of CdS films were decreased as the source temperature was increased. This results were attributed to the increase of excess Cd amount in the film. The crystal structure of CdS films exhibited the hexagonal phase with preferential orientation of the (002) plane. As the substrate temperature was increased, the crystal structure of CdS films was improved and the resistivity of the films was increased due to the decrease of excess Cd in film.