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http://dx.doi.org/10.4313/JKEM.2010.23.8.638

Numerical Simulations of Electric-Optical Characteristics for Organic Light Emitting Diode with Gradient-Doped Emitting Layer  

Lee, Young-Gu (R&D Promotion Team, Cheorwon Plasma Research Institute)
Oh, Tae-Sik (Department of Information Display, Sun Moon University)
Publication Information
Journal of the Korean Institute of Electrical and Electronic Material Engineers / v.23, no.8, 2010 , pp. 638-644 More about this Journal
Abstract
We have carry out numerical simulation of the electric-optical characteristics of organic light emitting diodes with gradient-doped emitting layer which were reported to be effective in improving luminous efficiency and lifetime. In this paper, the basic structure is comprised of ITO/NPB/$Alq_3$:C545T[%]/$Alq_3$/LiF/Al, six devices by separating the emitting layer of $Alq_3$:C545T[%] were studied. As the result, the uniformly-doped devices exhibited superior luminous efficiency-current density characteristics over conventional undoped device. In the case of gradient-doped devices, electric-optical characteristics were improved similar to uniformed-doped devices, unusually the distribution of traped-charge density in the OLED devices was shown as the staircase.
Keywords
OLED; Host-guest system; Gradient-doped emitting layer;
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1 S. Naka, H. Okada, H. Onnagawa, Y. Yamaguchi, and T. Tsutsui, Synth. Met. 111-112, 331 (2000).   DOI
2 G. G. Malliaras, Y. Shen, D. H. Dunlop, H. Murata, and Z. H. Kafafi, Appl. Phys. Lett. 79, 2582 (2001).   DOI
3 S. C. Tse, H. H. Fong, and S. K. So, J. Appl. Phys. 94, 2033 (2003).   DOI
4 C. Hosokawa, H. Tokailin, H. Higashi, and T. Kusumoto, Appl. Phys. Lett. 60, 1220 (1992).   DOI
5 J. Kalinowski, N. Camaioni, P. D. Marco, V. Fattori, and A. Martelli, Appl. Phys. Lett. 72, 513 (1998).   DOI
6 S. Barth, P. Muller, H. Riel, P. F. Seildler, W. Riess, H. Vestweber, and H. Bassler, J. Appl. Phys. 89, 3711 (2001).   DOI
7 D. Ma, G. Wang, Y. Hu, Y. Zhang, L. Wang, X. Jing, F. Wang, C. S. Lee, and S. T. Lee, Appl. Phys. Lett. 82, 1296 (2003).   DOI
8 J. Chen and D. Ma, J. Appl. Phys. 95, 5778 (2004).   DOI
9 T. S. Oh and Y. G. Lee, J. Kor. Acad. Ind. Coop. Soc. 11, 827 (2010).
10 C. C. Lee, Y.-D. Jong, P.-T. Huang, Y. C. Chen, P.-J. Hu, and Y. Chang, Jpn. J. Appl. Phys. 44, 8147 (2005).   DOI
11 Y. Luo, H. Aziz, Z. D. Popovic, and G. Xu, Appl. Phys. Lett. 89, 103505 (2006).   DOI
12 Z. Chen and D. Ma, J. Lumin. 122-123, 633 (2007).   DOI
13 A. B. Chwang, R. C. Kwong, and J. J. Brown, Appl. Phys. Lett. 80, 725 (2002).   DOI
14 D. Ma, C. S. Lee, S. T. Lee, and L. S. Hung, Appl. Phys. Lett. 80, 3641 (2002).   DOI
15 B. J. Chen, W. Y. Lai, Z. Q. Gao, C. S. Lee, W. A. Gambling, and S. T. Lee, Appl. Phys. Lett. 75, 4010 (1999).   DOI
16 C. B. Lee, A. Uddin, X. Hu, and T. G. Andersson, Mater. Sci. Eng., B 112, 14 (2004).   DOI
17 W. D. Gill, J. Appl. Phys. 43, 5033 (1972).   DOI
18 R. G. Kepler, P. M. Beeson, S. J. Jacobs, R. A. Anderson, M. B. Sinclair, V. S. Valencia, and P. A. Cahill, Appl. Phys. Lett. 66, 3618 (1995).   DOI
19 B. Chen and S. Liu, Synth. Met. 91, 169 (1997).   DOI
20 D. J. Pinner, R. H. Friend, and N. Tessler, J. Appl. Phys. 86, 5116 (1999).   DOI
21 P. W. M. Blom and M. C. J. M. Vissenberg, Mater. Sci. Eng. R 27, 53 (2000).   DOI
22 W. Brutting, S. Berleb, and A. G. Muckl, Org. Electron. 2, 1 (2001).   DOI
23 G. Pfister, Phys. Rev. B 16, 3676 (1977).   DOI
24 R. L. Martin, J. D. Kress, I. H. Campbell, and D. L. Smith, Phys. Rev. B 61, 15804 (2000).   DOI
25 Y. Ohmori, A. Fuji, M. Uchida, C. Morishima, and K. Yoshino, Appl. Phys. Lett. 63, 1871 (1993).   DOI
26 S. A. Van Slyke, C. H. Chen, and C. W. Wang, Appl. Phys. Lett. 69, 2160 (1996).   DOI
27 F. Guo, D. Ma, L. Wang, X. Jing, and F. Wang, Semicond. Sci. Technol. 20, 310 (2005).   DOI
28 Peter K. H. Ho, J.-S. Kim, J. H. Burroughes, H. Becker, Sam F. Y. Li, T. M. Brown, F. Cacialli, and R. H. Friend, Nature 404, 481 (2000).   DOI   ScienceOn
29 C. W. Tang, S. A. VanSlyke, and C. H. Chen, J. Appl. Phys. 65, 3610 (1989).   DOI
30 T. Mori, K. Obata, and T. Mizutani, J. Phys. D: Appl. Phys. 32, (1198) 1999.   DOI